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Yield, noise and timing studies of ALICE ITS3 stitched sensor test structures: The MOST
/ ALICE Collaboration
In the LHC long shutdown 3, the ALICE experiment upgrades the inner layers of its Inner Tracker System with three layers of wafer-scale stitched sensors bent around the beam pipe. Two stitched sensor evaluation structures, the MOnolithic Stitched Sensor (MOSS) and MOnolithic Stitched Sensor with Timing (MOST) allow the study of yield dependence on circuit density, power supply segmentation, stitching demonstration for power and data transmission, performance dependence on reverse bias, charge collection performance, parameter uniformity across the chip, and performance of wafer-scale data transmission. [...]
arXiv:2507.16409.-
2025-06-25 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1080 (2025) 170764
Fulltext: Publication - PDF; 2507.16409 - PDF;
In : 17th Vienna Conference on Instrumentation (VCI2025), Vienna, Austria, 17 - 21 Feb 2025, pp.170764
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Exploring unique design features of the Monolithic Stitched Sensor with Timing (MOST): yield, powering, timing, and sensor reverse bias
/ ALICE Collaboration
Monolithic stitched CMOS sensors are explored for the upgrade of Inner Tracking System of the ALICE experiment (ITS3) and the R&D; of the CERN Experimental Physics Department. To learn about stitching, two 26 cm long stitched sensors, the Monolithic Stitched Sensor (MOSS), and the Monolithic Stitched Sensor with Timing (MOST), were implemented in the Engineering Round 1 (ER1) in the TPSCo 65nm ISC technology. [...]
arXiv:2504.13696.-
2025 - 7 p.
- Published in : JINST 20 (2025) C07032
Fulltext: PDF;
In : 11th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL 2024), Strasbourg, France, 18 - 22 Nov 2024, pp.C07032
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Power distribution over the wafer-scale monolithic pixel detector — MOSAIX for ALICE ITS3
/ Aglieri Rinella, G (CERN) ; Bugiel, S (CERN) ; Dobrijevic, D (CERN) ; Lemoine, C (CERN) ; Snoeys, W (CERN) ; Vicente Leitao, P (CERN)
/ALICE Collaboration
For the LS3 ALICE ITS3 upgrade the detector material budget reduction has been pushed to the limit by proposing a system composed almost exclusively of silicon wafer thinned down to 50μm. This improves performance, but adds complexity to the ASIC design. [...]
2025 - 6 p.
- Published in : JINST
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2024, Glasgow, United Kingdom, 30 Sep - 4 Oct 2024, pp.C02015
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Characterisation of analogue MAPS produced in the 65 nm TPSCo process
/ ALICE Collaboration
Within the context of the ALICE ITS3 collaboration, a set of MAPS small-scale test structures were developed using the 65 nm TPSCo CMOS imaging process with the upgrade of the ALICE inner tracking system as its primary focus. One such sensor, the Circuit Exploratoire 65 nm (CE-65), and its evolution the CE-65v2, were developed to explore charge collection properties for varying configurations including collection layer process (standard, blanket, modified with gap), pixel pitch (15, 18, \SI{22.5}{\micro\meter}), and pixel geometry (square vs hexagonal/staggered). [...]
arXiv:2411.08740.-
2025-01-16 - 9 p.
- Published in : JINST
Fulltext: 2411.08740 - PDF; document - PDF;
In : 25th international Workshop on Radiation Imaging Detectors (iWoRiD2024), Lisbon, Portugal, 30 Jun - 4 Jul 2024, pp.C01019
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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9.
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Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology
/ Cecconi, L (CERN) ; Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; de Melo, J L A (CERN) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Hong, G H (CERN ; Yonsei U.) ; Snoeys, W (CERN) ; Mager, M (CERN) ; Suljic, M (CERN) ; Kugathasan, T (CERN) ; Buckland, M (Trieste U. ; INFN, Trieste) et al.
The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 × 32 binary pixel matrix at 15 μm pitch with event-driven readout, with GHz range time-encoded digital signals including Time-Over-Threshold. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C02025
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02025
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10.
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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