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1.
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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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2.
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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3.
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4.
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Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC
/ Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.-
2020-05-22 - 22 p.
- Published in : JINST
Fulltext: PDF;
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5.
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Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC
/ Hirono, Toko (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bhat, Siddharth (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Zongde (Marseille, CPPM) ; Daas, Michael (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Godiot, Stephanie (Marseille, CPPM) et al.
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$\Omega$ $cm^2$) wafers. [...]
arXiv:1803.09260.-
2019-04-21 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 87-91
Fulltext: PDF;
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.87-91
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6.
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Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
/ Rymazewski, Piotr (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Bhat, Siddharth (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Zongde (Marseille, CPPM) ; Degerli, Yavuz (IRFU, Saclay) ; Godiot, Stephanie (Marseille, CPPM) ; Guilloux, Fabrice (IRFU, Saclay) ; Guyot, Claude (IRFU, Saclay) et al.
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). [...]
arXiv:1711.01233.-
SISSA, 2018-01-10 - 5 p.
- Published in : PoS TWEPP-17 (2018) 045
Fulltext: PoS(TWEPP-17)045 - PDF; arXiv:1711.01233 - PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.045
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7.
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Development of a large pixel chip demonstrator in RD53 for ATLAS and CMS upgrades
/ Conti, Elia (CERN) ; Barbero, Marlon (Marseille, CPPM) ; Fougeron, Denis (Marseille, CPPM) ; Godiot, Stephanie (Marseille, CPPM) ; Menouni, Mohsine (Marseille, CPPM) ; Pangaud, Patrick (Marseille, CPPM) ; Rozanov, Alexandre (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) et al.
/RD53
RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and very high radiation levels (500 Mrad, possibly 1 Grad) for ATLAS and CMS phase 2 upgrades. It features serial powering operation and design variations in the analog and digital pixel matrix for different testing purposes. [...]
SISSA, 2017 - 5 p.
- Published in : PoS TWEPP-17 (2017) 005
Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.005
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8.
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Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
/ Rymaszewski, Piotr (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Godiot, Stépahnie (Marseille, CPPM) ; Gonella, Laura (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Liu, Jian (Marseille, CPPM) et al.
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. [...]
arXiv:1601.00459.-
2016-02-15 - 9 p.
- Published in : JINST 11 (2016) C02045
Fulltext: PDF; External link: Preprint
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C02045
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9.
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High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments
/ Peric, Ivan (Heidelberg U.) ; Augustin, Heiko (Heidelberg U.) ; Backhaus, Malte (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Benoit, Mathieu (CERN) ; Berger, Niklaus (Heidelberg U.) ; Bompard, Frederic (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Clemens, Jean-Claude (Marseille, CPPM) ; Dannheim, Dominik (CERN) et al.
High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq = cm 2 , nearly 100% detection ef fi ciency and a spatial resolution of about 3 μ m were demonstrated [...]
2013 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 731 (2013) 131-136
In : 6th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Inawashiro, Japan, 3 - 7 Sep 2012, pp.131-136
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10.
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Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip
/ ATLAS IBL Collaboration
The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. [...]
arXiv:1209.1906; AIDA-PUB-2012-010.-
2012 - 45 p.
- Published in : JINST 7 (2012) P11010
Fulltext: PDF; External link: Preprint
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