CERN Accelerating science

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1.
Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy / ISOLDE Collaboration
Formation, structure, and stability of hydrogen correlated complexes, created at Cd acceptors in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at different energies. The different complexes were monitored by the perturbed angular correlation technique (PAC). [...]
1995 - 6 p. - Published in : Solid State Commun. 93 (1995) 425-430
2.
Microscopical studies of structural and electronic properties of semiconducuctors / Deicher, M ; Keller, R ; Pfeiffer, Wolfgang (et al.)
CERN-PSCC-90-4 ; PSCC-S-122.
- 1990. - 1 p.
Access to fulltext document - Access to fulltext document - CERN library copies
3.
Annealing of damage in GaAs and InP after implantation of Cd and In / Pfeiffer, Wolfgang ; Deicher, M ; Kalish, R ; Keller, R ; Maegerle, R ; Moriya, N ; Pross, P ; Skudlik, H ; Wichert, T ; Wolf, H /ISOLDE Collaboration
1992
In : 16th International Conference on Defects in Semiconductors, Bethlehem, PA, USA, 22 - 27 Jul 1991, pp.1481-1486
4.
Stability of acceptor-hydrogen complexes in semiconductors / Skudlik, H ; Deicher, M ; Keller, R ; Pfeiffer, Wolfgang ; Steiner, D ; Wichert, T /ISOLDE Collaboration
1990
In : International Conference on the Science and Technology of Defect Control in Semiconductors, Yokohama, Japan, 17 - 22 Sep 1989, pp.413
5.
Interaction of hydrogen with Cd acceptons in GaP and InP / ISOLDE Collaboration
CERN-PPE-94-102.
- 1994. - 5 p.
Fulltext - CERN library copies
6.
Investigation of hydrogen in semiconductors by nuclear techniques / Deicher, M ; Keller, R ; Pfeiffer, Wolfgang ; Skudlik, H ; Wichert, T /ISOLDE Collaboration
1991 - Published in : Physica B 170 (1991) 335
7.
Cd-H pairs in GaAs : identification and stability / ISOLDE Collaboration
1991 - Published in : Appl. Phys. Lett. 58 (1991) 1751-1753
8.
Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy / ISOLDE Collaboration
1991 - Published in : Appl. Surf. Sci. 50 (1991) 154-158
9.
Annealing of Cd-implanted GaAs : defect removal, lattice site occupation, and electrical activation / Moriya, N ; Brener, I ; Kalish, R ; Pfeiffer, Wolfgang ; Deicher, M ; Keller, R ; Magerle, R ; Recknagel, E ; Skudlik, H ; Wichert, T et al.
1993 - Published in : J. Appl. Phys. 73 (1993) 4248-4256

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