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Yield, noise and timing studies of ALICE ITS3 stitched sensor test structures: The MOST
/ ALICE Collaboration
In the LHC long shutdown 3, the ALICE experiment upgrades the inner layers of its Inner Tracker System with three layers of wafer-scale stitched sensors bent around the beam pipe. Two stitched sensor evaluation structures, the MOnolithic Stitched Sensor (MOSS) and MOnolithic Stitched Sensor with Timing (MOST) allow the study of yield dependence on circuit density, power supply segmentation, stitching demonstration for power and data transmission, performance dependence on reverse bias, charge collection performance, parameter uniformity across the chip, and performance of wafer-scale data transmission. [...]
arXiv:2507.16409.-
2025-06-25 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1080 (2025) 170764
Fulltext: Publication - PDF; 2507.16409 - PDF;
In : 17th Vienna Conference on Instrumentation (VCI2025), Vienna, Austria, 17 - 21 Feb 2025, pp.170764
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Further Characterisation of Digital Pixel Test Structures Implemented in a 65 nm CMOS Process
/ Rinella, Gianluca Aglieri (CERN) ; Apadula, Nicole (UC, Berkeley ; LBNL, Berkeley) ; Andronic, Anton (Munster U., ITP) ; Antonelli, Matias (INFN, Trieste) ; Aresti, Mauro (Cagliari U. ; INFN, Cagliari) ; Baccomi, Roberto (INFN, Trieste) ; Becht, Pascal (Warsaw U.) ; Beole, Stefania (Turin U. ; INFN, Turin ; Turin Observ.) ; Borri, Marcello (Daresbury) ; Braach, Justus (CERN ; Hamburg U.) et al.
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. [...]
arXiv:2505.05867.
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24.
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Exploring unique design features of the Monolithic Stitched Sensor with Timing (MOST): yield, powering, timing, and sensor reverse bias
/ ALICE Collaboration
Monolithic stitched CMOS sensors are explored for the upgrade of Inner Tracking System of the ALICE experiment (ITS3) and the R&D; of the CERN Experimental Physics Department. To learn about stitching, two 26 cm long stitched sensors, the Monolithic Stitched Sensor (MOSS), and the Monolithic Stitched Sensor with Timing (MOST), were implemented in the Engineering Round 1 (ER1) in the TPSCo 65nm ISC technology. [...]
arXiv:2504.13696.-
2025 - 7 p.
- Published in : JINST 20 (2025) C07032
Fulltext: PDF;
In : 11th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL 2024), Strasbourg, France, 18 - 22 Nov 2024, pp.C07032
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Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer
/ Paolozzi, L. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U.) ; Elviretti, M. (CERN) ; Rücker, H. (CERN) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) et al.
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 μ m pitch, read by low-noise, high-speed front-end electronics built using 130 nm SiGe BiCMOS technology. [...]
arXiv:2412.07606.-
2025 - 18 p.
- Published in : JINST 20 (2025) P04001
Fulltext: 2412.07606 - PDF; document - PDF;
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Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
/ Moretti, T. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) ; Nakamura, K. (KEK, Tsukuba) ; Takubo, Y. (KEK, Tsukuba) et al.
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μ m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. [...]
arXiv:2404.12885.-
2024-07-29 - 15 p.
- Published in : JINST 19 (2024) P07036
Fulltext: Publication - PDF; 2404.12885 - PDF;
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Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser
/ Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Latshaw, A. (Geneva U.) ; Bonacina, L. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) et al.
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2401.01229.-
2024-04-24 - 11 p.
- Published in : JINST 19 (2024) P04029
Fulltext: 2401.01229 - PDF; Publication - PDF;
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A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology
/ Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Rinella, G Aglieri (CERN) ; Andronic, A (U. Munster) ; Antonelli, M (INFN, Trieste) ; Aresti, M (Cagliari U. ; INFN, Cagliari) ; Baccomi, R (INFN, Trieste) ; Becht, P (Heidelberg U.) ; Beolè, S (Turin U. ; INFN, Turin) ; Braach, J (CERN) ; Buckland, M D (INFN, Trieste ; Trieste U.) et al.
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (< 2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5×1.5 mm including a matrix of 32×32 pixels with a pitch of 15μm . [...]
2023 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2191-2200
Fulltext: PDF;
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology
/ Cecconi, L (CERN) ; Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; de Melo, J L A (CERN) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Hong, G H (CERN ; Yonsei U.) ; Snoeys, W (CERN) ; Mager, M (CERN) ; Suljic, M (CERN) ; Kugathasan, T (CERN) ; Buckland, M (Trieste U. ; INFN, Trieste) et al.
The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 × 32 binary pixel matrix at 15 μm pitch with event-driven readout, with GHz range time-encoded digital signals including Time-Over-Threshold. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C02025
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02025
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