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CERN Document Server 130 elementer funnet  1 - 10nesteslutt  gå til element: Søket tok 0.73 sekunder. 
1.
Caribou — A versatile data acquisition system for silicon pixel detector prototyping / Otarid, Younes (CERN) ; Benoit, Mathieu (ORNL, Oak Ridge (main)) ; Buschmann, Eric (Brookhaven Natl. Lab.) ; Chen, Hucheng (Brookhaven Natl. Lab.) ; Dannheim, Dominik (CERN) ; Koffas, Thomas (Carleton U. (main)) ; St-Jean, Ryan (Carleton U. (main)) ; Spannagel, Simon (DESY) ; Tang, Shaochun (Brookhaven Natl. Lab.) ; Vanat, Tomas (DESY)
Caribou is a versatile data acquisition system used in multiple collaborative frameworks (CERN EP R&D;, DRD3, AIDAinnova, Tangerine) for laboratory and test-beam qualification of novel silicon pixel detector prototypes. The system is built around a common hardware, firmware and software stack shared accross different projects, thereby drastically reducing the development effort and cost. [...]
arXiv:2502.03903.- 2025-07-15 - 6 p. - Published in : JINST
Fulltext: 2502.03903 - PDF; document - PDF;
In : 11th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL 2024), Strasbourg, France, 18 - 22 Nov 2024, pp.C07043
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2.
Timing performance of the DESY ER1 chip in a 65 nm CMOS imaging technology / He, Yajun (DESY) ; Ballabriga Sune, Rafael (DESY) ; Buschmann, Eric (Brookhaven Natl. Lab.) ; Campell, Michael (CERN) ; Mohr, Raimon Casanova (Barcelona, IFAE) ; Chauhan, Ankur (DESY) ; Dannheim, Dominik (CERN) ; Del Rio Viera, Manuel Alejandro (DESY) ; Dilg, Jona (DESY) ; Dorda, Ana (CERN) et al.
Monolithic active pixel sensors (MAPS) are promising candidates for the next generation of vertex detectors at future lepton colliders. One particularly interesting advancement is the recently accessible 65 nm CMOS imaging technology, which offers higher logic density compared to larger feature-size processes, making it highly appealing to the High Energy Physics community. [...]
2025 - Published in : Nucl. Instrum. Methods Phys. Res., A 1080 (2025) 170762
In : 17th Vienna Conference on Instrumentation (VCI2025), Vienna, Austria, 17 - 21 Feb 2025, pp.170762
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3.
Impact of the circuit layout on the charge collection in a monolithic pixel sensor / Lemoine, Corentin (CERN ; Strasbourg, IPHC) ; Ballabriga, Rafael (CERN) ; Buschmann, Eric (Brookhaven Natl. Lab.) ; Campbell, Michael (CERN) ; Mohr, Raimon Casanova (Barcelona, IFAE) ; Dannheim, Dominik (CERN) ; Dilg, Jona (DESY) ; Dorda, Ana (CERN) ; King, Finn (DESY) ; Feyens, Ono (DESY) et al.
CERN's strategic R&D; programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. [...]
arXiv:2503.21853.- 2025-06-24 - 7 p. - Published in : JINST 20 (2025) C06052 Fulltext: 2503.21853 - PDF; document - PDF;
In : 11th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL 2024), Strasbourg, France, 18 - 22 Nov 2024, pp.C06052
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4.
Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process / Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) et al.
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. [...]
arXiv:2403.08952.- 2024-09-21 - 40 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896 Fulltext: 2403.08952 - PDF; Publication - PDF;
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5.
Annual Report 2023 and Phase-I Closeout / Aglieri Rinella, Gianluca
This report summarises the activities of the CERN strategic R&D programme on technologies for future experiments during the year 2023, and highlights the achievements of the programme during its first phase 2020-2023..
CERN-EP-RDET-2024-001 - 208.

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6.
ALICE upgrades during the LHC Long Shutdown 2 / ALICE Collaboration
A Large Ion Collider Experiment (ALICE) has been conceived and constructed as a heavy-ion experiment at the LHC. During LHC Runs 1 and 2, it has produced a wide range of physics results using all collision systems available at the LHC. [...]
arXiv:2302.01238; CERN-EP-2023-009.- Geneva : CERN, 2024-05-23 - 159 p. - Published in : JINST 19 (2024) P05062 Draft (restricted): PDF; Fulltext: 2302.01238 - PDF; document - PDF;
In : The Large Hadron Collider and The Experiments for Run 3
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7.
Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD / Dort, Katharina (CERN) ; Ballabriga, Rafael (CERN) ; Braach, Justus (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Huth, Lennart (DESY) ; Kremastiotis, Iraklis (CERN) ; Kröger, Jens (CERN) ; Linssen, Lucie (CERN) et al.
Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. [...]
arXiv:2204.10569.- 2022-10-11 - 11 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1041 (2022) 167413 Fulltext: 1-s2.0-S0168900222007069-main - PDF; 2204.10569 - PDF;
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8.
Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors / Ballabriga, Rafael (CERN) ; Braach, Justus (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Dort, Katharina (CERN) ; Huth, Lennart (DESY) ; Kremastiotis, Iraklis (CERN) ; Kröger, Jens (CERN) ; Linssen, Lucie (CERN) et al.
An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. [...]
arXiv:2202.03221.- 2022-05-11 - 16 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1031 (2022) 166491 2202.03221: PDF; Fulltext: PDF; Fulltext from publisher: PDF;
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9.
Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors / Ballabriga Sune, Rafael (CERN) ; Braach, Justus (Hamburg University (DE)) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Dort, Katharina (Justus-Liebig-Universitaet Giessen (DE)) ; Huth, Lennart (Deutsches Elektronen-Synchrotron (DE)) ; Kremastiotis, Iraklis (KIT - Karlsruhe Institute of Technology (DE)) ; Kroeger, Jens (Ruprecht Karls Universitaet Heidelberg (DE)) ; Linssen, Lucie (CERN) et al.
An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. [...]
CLICdp-Pub-2021-003.- Geneva : CERN, 2021 - 16. Fulltext: PDF;
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10.
First demonstration of in-beam performance of bent Monolithic Active Pixel Sensors / ALICE ITS project Collaboration
A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$\mu$m. To solidify this concept, the feasibility of operating bent MAPS was demonstrated using 1.5$\times$3cm ALPIDE chips. [...]
arXiv:2105.13000.- 2022-04-01 - 14 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1028 (2022) 166280 Fulltext: PDF;
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6 Vanat, T.
136 Vanat, Tomas
6 Vaňát, T.
6 Vǎnát, T.
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