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Increase of the photoconductivity quantum yield in silicon irradiated by neutrons to extremely high fluences / Vaitkus, Juozas V (Vilnius U. (main)) ; Moll, Michael (CERN) ; Kažukauskas, Vaidotas (Vilnius U. (main)) ; Vertelis, Vilius (Vilnius U. (main))
An enhanced quantum yield observed in silicon ionizing radiation detectors, neutron-irradiated to extremely high fluences, could be attributed to impact ionization via deep levels. The quantum yield was investigated by the intrinsic photoconductivity optical spectroscopy in silicon irradiated by neutrons to a wide range of fluences up to $1 \times 10^{17}$ neutron cm$^{-2}$. An increase of quantum yield was observed in highly irradiated samples. [...]
2022 - 9 p. - Published in : J. Phys. D 55 (2022) 395104 Fulltext: PDF;

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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders / Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003. - 2010. - 73 p.
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11	Kazukauskas, V
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