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1.
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Single event effects testing of the RD53B chip
/ Menouni, Mohsine (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Flores, Leyre (CERN) ; Fougeron, Denis (Marseille, CPPM) ; Hemperek, Tomasz (Bonn U.) ; Joly, Eva (Marseille, CPPM) ; Lalic, Jelena (CERN) ; Strebler, Thomas (Marseille, CPPM)
The RD53 collaboration has been working since 2014 on the development of pixel chips for the CMS and ATLAS Phase 2 tracker upgrade. This work has recently led to the development of the RD53B full-scale readout chip which is using the 65nm CMOS process and containing 153600 pixels of 50 × 50 μm
$^{2}$ The RD53B chip is designed to be robust against the Single Event Effects (SEE), allowing such a complex chip to operate reliably in the hostile environment of the HL-LHC. [...]
2022 - 5 p.
- Published in : J. Phys. : Conf. Ser. 2374 (2022) 012084
Fulltext: PDF;
In : International Conference on Technology and Instrumentation in Particle Physics (TIPP 2021), Online, Canada, 24 - 29 May 2021, pp.012084
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2.
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3.
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Radiation Effects on High-Speed InGaAs Photodiodes
/ Olantera, Lauri (CERN) ; Bottom, Freya (CERN) ; Kraxner, Andrea (CERN) ; Detraz, Stephane (CERN) ; Menouni, Mohsine (Marseille, CPPM) ; Moreira, Paulo (CERN) ; Scarcella, Carmelo (CERN) ; Sigaud, Christophe (CERN) ; Soos, Csaba (CERN) ; Troska, Jan (CERN) et al.
Photodiodes are important components in optical data links, and their performance degradation under irradiation has to be understood in order to guarantee the long-term functionality of the data links in radiation environments of high-energy physics experiments. Indium gallium arsenide (InGaAs) on indium phosphide (InP) photodiodes are attractive candidates for these applications, thanks to their relatively modest radiation-induced responsivity loss when operated at 850 nm. [...]
2019 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1663-1670
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1663-1670
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4.
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The lpGBTIA, a 2.5 Gbps Radiation-Tolerant Optical Receiver using InGaAs photodetector
/ Menouni, Mohsine (Marseille, CPPM) ; Francisco, Rui (CERN) ; Olantera, Lauri (CERN) ; Troska, Jan (CERN) ; Sigaud, Christophe (CERN) ; Detraz, Stephane (CERN) ; Soos, Csaba (CERN) ; Vasey, Francois (CERN) ; Moreira, Paulo (CERN)
The Low Power GigaBit Transimpedance Amplifier (lpGBTIA) is the optical receiver amplifier in the lpGBT chipset. It is a highly sensitive transimpedance amplifier designed to operate at 2.56 Gbps. [...]
SISSA, 2020 - 5 p.
- Published in : PoS TWEPP2019 (2020) 030
Fulltext: PDF;
In : TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.030
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5.
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Development of a large pixel chip demonstrator in RD53 for ATLAS and CMS upgrades
/ Conti, Elia (CERN) ; Barbero, Marlon (Marseille, CPPM) ; Fougeron, Denis (Marseille, CPPM) ; Godiot, Stephanie (Marseille, CPPM) ; Menouni, Mohsine (Marseille, CPPM) ; Pangaud, Patrick (Marseille, CPPM) ; Rozanov, Alexandre (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) et al.
/RD53
RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and very high radiation levels (500 Mrad, possibly 1 Grad) for ATLAS and CMS phase 2 upgrades. It features serial powering operation and design variations in the analog and digital pixel matrix for different testing purposes. [...]
SISSA, 2017 - 5 p.
- Published in : PoS TWEPP-17 (2017) 005
Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.005
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6.
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Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip
/ ATLAS IBL Collaboration
The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. [...]
arXiv:1209.1906; AIDA-PUB-2012-010.-
2012 - 45 p.
- Published in : JINST 7 (2012) P11010
Fulltext: PDF; External link: Preprint
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7.
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Single-event upsets in photoreceivers for Multi-Gb/s SLHC data transmission
/ Seif El Nasr-Storey, Sarah (CERN) ; Detraz, Stephane (CERN) ; Gui, Ping (Southern Methodist U.) ; Menouni, Mohsine (Marseille, CPPM) ; Moreira, Paulo (CERN) ; Papadopoulos, Spyridon (CERN) ; Sigaud, Christophe (CERN) ; Soos, Csaba (CERN) ; Stejskal, Pavel (CERN) ; Troska, Jan (CERN) et al.
A 63 MeV proton beam was used to perform a single event upset (SEU) test on a candidate component for a future high luminosity large hadron collider (HL-LHC) high speed optical. An in-lab error injector was used to show that 1-0 bit errors are caused by the amplifier's response to the large signal caused by a single event transient (SET) in the photodiode..
2011 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 58 (2011) 3111-3117
IEEE Published version, local copy: PDF;
In : 17th IEEE NPSS Real Time Conference, Lisbon, Portugal, 24 - 28 May 2010, pp.3111-3117
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8.
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The FE-I4 Pixel Readout Chip and the IBL Module
/ Barbero, Marlon (University of Bonn) ; Arutinov, David (University of Bonn) ; Backhaus, Malte (University of Bonn) ; Fang, Xiaochao (University of Bonn) ; Gonella, Laura (University of Bonn) ; Hemperek, Tomasz (University of Bonn) ; Karagounis, Michael (University of Bonn) ; Krueger, Hans (University of Bonn) ; Kruth, Andre (University of Bonn) ; Wermes, Norbert (University of Bonn) et al.
FE-I4 is the new ATLAS pixel readout chip for the upgraded ATLAS pixel detector. [...]
AIDA-CONF-2015-044.
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2011.
Full text
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9.
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FE-I4 ATLAS pixel chip design
/ Barbero, Marlon (Bonn U.) ; Arutinov, David (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Karagounis, Michael (Bonn U.) ; Kruth, Andre (Bonn U.) ; Wermes, Norbert (Bonn U.) ; Beccherle, Roberto (INFN, Genoa) ; Darbo, Giovanni (INFN, Genoa) ; Dube, Sourabh (LBL, Berkeley) ; Elledge, David (LBL, Berkeley) et al.
2009 - 10 p.
- Published in : PoS VERTEX2009 (2009) 027
External link: Published version from PoS
In : 18th International Workshop on Vertex Detectors and related techniques, Veluwe, Netherlands, 13 - 18 Sep 2009, pp.027
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