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1.
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Transient simulations of MAPS using TCAD, Allpix squared & SPICE
/ Mendes, Larissa (DESY) ; Dannheim, Dominik (CERN) ; Del Rio Viera, Manuel (DESY) ; Dort, Katharina (CERN) ; Eckstein, Doris (DESY) ; King, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; He, Yajun (DESY) ; Huth, Lennart (DESY) ; Lachnit, Stephan (DESY) et al.
Monolithic Active Pixel Sensors (MAPS) designed in a 65 nm CMOS imaging technology are an alternative to hybrid pixel sensors as they eliminate the demand for flip-chip bonding while reducing material budget through thinner active sensor layers. The TANGERINE project aims to create a 65 nm MAPS sensor with a small collection electrode for use in future lepton colliders and beam telescopes. [...]
2025 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1080 (2025) 170749
In : 17th Vienna Conference on Instrumentation (VCI2025), Vienna, Austria, 17 - 21 Feb 2025, pp.170749
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2.
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Simulation of CMOS strip sensors
/ Davis, Naomi (DESY) ; Arling, Jan-Hendrik (DESY) ; Baselga, Marta (Dortmund U.) ; Diehl, Leena (Freiburg U. ; CERN) ; Dingfelder, Jochen (Bonn U.) ; Gregor, Ingrid-Maria (DESY) ; Hauser, Marc (Freiburg U.) ; Hügging, Fabian (Bonn U.) ; Jakobs, Karl (Freiburg U.) ; Karagounis, Michael (Applied Sci. U., Dortmund) et al.
In high-energy physics, there is a need to investigate silicon sensor concepts that offer large-area coverage and cost-efficiency for particle tracking detectors. Sensors based on CMOS imaging technology present a promising alternative silicon sensor concept. [...]
2025 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1080 (2025) 170807
Fulltext: PDF;
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3.
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Timing performance of the DESY ER1 chip in a 65 nm CMOS imaging technology
/ He, Yajun (DESY) ; Ballabriga Sune, Rafael (DESY) ; Buschmann, Eric (Brookhaven Natl. Lab.) ; Campell, Michael (CERN) ; Mohr, Raimon Casanova (Barcelona, IFAE) ; Chauhan, Ankur (DESY) ; Dannheim, Dominik (CERN) ; Del Rio Viera, Manuel Alejandro (DESY) ; Dilg, Jona (DESY) ; Dorda, Ana (CERN) et al.
Monolithic active pixel sensors (MAPS) are promising candidates for the next generation of vertex detectors at future lepton colliders. One particularly interesting advancement is the recently accessible 65 nm CMOS imaging technology, which offers higher logic density compared to larger feature-size processes, making it highly appealing to the High Energy Physics community. [...]
2025
- Published in : Nucl. Instrum. Methods Phys. Res., A 1080 (2025) 170762
In : 17th Vienna Conference on Instrumentation (VCI2025), Vienna, Austria, 17 - 21 Feb 2025, pp.170762
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4.
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5.
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Observation of VVZ production at s=13 TeV with the ATLAS detector
/ ATLAS Collaboration
A search for the production of three massive vector bosons, VVZ(V=W,Z), in proton–proton collisions at s=13 TeV is performed using data with an integrated luminosity of 140 fb−1 recorded by the ATLAS detector at the Large Hadron Collider. Events produced in the leptonic final states WWZ→ℓνℓνℓℓ (ℓ=e,μ), WZZ→ℓνℓℓℓℓ, ZZZ→ℓℓℓℓℓℓ, and the semileptonic final states WWZ→qqℓνℓℓ and WZZ→ℓνqqℓℓ, are analysed. [...]
2025 - 27 p.
- Published in : Phys. Lett. B 866 (2025) 139527
Fulltext: PDF;
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6.
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Impact of the circuit layout on the charge collection in a monolithic pixel sensor
/ Lemoine, Corentin (CERN ; Strasbourg, IPHC) ; Ballabriga, Rafael (CERN) ; Buschmann, Eric (Brookhaven Natl. Lab.) ; Campbell, Michael (CERN) ; Mohr, Raimon Casanova (Barcelona, IFAE) ; Dannheim, Dominik (CERN) ; Dilg, Jona (DESY) ; Dorda, Ana (CERN) ; King, Finn (DESY) ; Feyens, Ono (DESY) et al.
CERN's strategic R&D; programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. [...]
arXiv:2503.21853.-
2025-06-24 - 7 p.
- Published in : JINST 20 (2025) C06052
Fulltext: 2503.21853 - PDF; document - PDF;
In : 11th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL 2024), Strasbourg, France, 18 - 22 Nov 2024, pp.C06052
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7.
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Passive CMOS Strip Sensors – Characterisation, Simulation and Test Beam Results
/ Zatocilova, Iveta (Freiburg U.) ; Arling, Jan-Hendrik (DESY) ; Baselga, Marta (Dortmund U.) ; Davis, Naomi (DESY) ; Diehl, Leena (Freiburg U. ; CERN) ; Dingfelder, Jochen (Bonn U.) ; Gregor, Ingrid-Maria (DESY) ; Hauser, Marc (Freiburg U.) ; Hemperek, Tomasz (Bonn U.) ; Hügging, Fabian (Bonn U.) et al.
In the passive CMOS Strips Project, strip sensors were designed by a collaboration of German institutes and produced at LFoundry in 150 nm technology. Up to five individual reticles were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. [...]
2024 - 6 p.
- Published in : PoS ICHEP2024 (2025) 1073
Fulltext: PDF;
In : 42nd International Conference on High Energy Physics (ICHEP 2024), Prague, Czech Republic, 18 - 24 Jul 2024, pp.1073
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8.
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Transient studies using a TCAD and Allpix Squared combination approach
/ Del Rio Viera, Manuel Alejandro (DESY ; Bonn U.) ; Buschmann, Eric (CERN) ; Chauhan, Ankur (DESY) ; Dannheim, Dominik (CERN) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Hansen, Karsten (DESY) ; He, Yajun (DESY) et al.
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. [...]
arXiv:2502.06675.-
2025 - 6 p.
- Published in : PoS TIPP2023 (2025) 104
Fulltext: 2502.06675 - PDF; document - PDF;
In : 6th International Conference on Technology and Instrumentation in Particle Physics (TIPP 2023), Cape Town, Western Cape, South Africa, 4 - 8 Sep 2023, pp.104
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9.
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10.
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Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
/ Wennlöf, Håkan (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Huth, Lennart (DESY) ; Lachnit, Stephan (DESY ; Hamburg U.) ; Mendes, Larissa (DESY ; Bonn U.) et al.
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an example. [...]
arXiv:2408.00027.-
2025-01-30 - 20 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1073 (2025) 170227
Fulltext: 2408.00027 - PDF; Publication - PDF;
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