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1.
Design and performance of the silicon sensors for the CMS barrel pixel detector / Allkofer, Y. (Zurich-Irchel U.) ; Amsler, Claude (Zurich-Irchel U.) ; Bortoletto, D. (Purdue U.) ; Chiochia, V. (Zurich-Irchel U.) ; Cremaldi, L. (Mississippi U.) ; Cucciarelli, S. (Basel U.) ; Dorokhov, A. (Zurich-Irchel U. ; PSI, Villigen) ; Hoermann, C. (Zurich-Irchel U. ; PSI, Villigen) ; Horisberger, R. (PSI, Villigen) ; Kim, D. (Johns Hopkins U.) et al.
The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. [...]
physics/0702092.- 2008 - 22 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 584 (2008) 25-41 Fulltext: PDF; External link: Preprint
2.
The CMS experiment at the CERN LHC / CMS Collaboration
2008 - 361 p. - Published in : JINST 3 (2008) S08004 SISSA/IOP Open Access article: PDF;
In : The CERN Large Hadron Collider - Please contact the library if you need to access this document.
3.
CMS Physics : Technical Design Report Volume 2: Physics Performance / Bayatian, G L
CERN-LHCC-2006-021 CMS-TDR-8-2. - Geneva : CERN, 2007. - 669 p. (Technical design report. CMS ; 8.2)


10.1088/0954-3899/34/6/S01
4.
CMS Physics : Technical Design Report Volume 1: Detector Performance and Software / Bayatian, G L
CERN-LHCC-2006-001 CMS-TDR-8-1. - Geneva : CERN, 2006. - 521 p. (Technical design report. CMS ; 8.1)

5.
Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors / Swartz, M. (Johns Hopkins U.) ; Chiochia, V. (Zurich U.) ; Allkofer, Y. (Zurich U.) ; Bortoletto, D. (Purdue U.) ; Cremaldi, L. (Mississippi U.) ; Cucciarelli, S. (Basel U.) ; Dorokhov, A. (Zurich U. ; PSI, Villigen) ; Hoermann, C. (Zurich U. ; PSI, Villigen) ; Kim, D. (Johns Hopkins U.) ; Konecki, M. (Basel U.) et al.
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. [...]
physics/0510040.- 2006 - 8 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 565 (2006) 212-220 External link: Access to fulltext document
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Bonn, Germany, 5 - 8 Sep 2005, pp.212-220
6.
Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements / Chiochia, Vincenzo (Zurich U.) ; Swartz, Morris (Johns Hopkins U.) ; Bortoletto, Daniela (Purdue U.) ; Cremaldi, Lucien (Mississippi U.) ; Cucciarelli, Susanna (Basel U.) ; Dorokhov, Andrei (Zurich U. ; PSI, Villigen) ; Hoermann, Christoph (Zurich U. ; PSI, Villigen) ; Kim, Dongwook (Johns Hopkins U.) ; Konecki, Marcin (Basel U.) ; Kotlinski, Danek (PSI, Villigen) et al.
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. [...]
physics/0411143.- 2004 - 6 p. Access to fulltext document: PDF; Fulltext: PDF; External link: physics/0411143 PDF
In : 4th Workshop on Gamma-Ray Burst in the Afterglow Era, Rome, Italy, 18 - 22 Oct 2004

Vedi anche: autori con nomi simili
2 Hoermann, C.
1 Hoermann, Christoph
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