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Extending a 65nm CMOS process design kit for high total ionizing dose effects / Nikolaou, Aristeidis (Natl. Tech. U., Athens) ; Bucher, Matthias (Natl. Tech. U., Athens) ; Makris, Nikos (Natl. Tech. U., Athens) ; Papadopoulou, Alexia (Natl. Tech. U., Athens) ; Chevas, Loukas (Natl. Tech. U., Athens) ; Borghello, Giulio (Udine U.) ; Koch, Henri D (U. Mons) ; Kloukinas, Kostas (CERN) ; Poikela, Tuomas S (CERN) ; Faccio, Federico (CERN)
Standard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. [...]
2018 - 4 p. - Published in : 10.1109/MOCAST.2018.8376561
In : 7th International Conference on Modern Circuits and Systems Technologies, Thessaloniki, Greece, 7 - 9 May 2018

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The VeloPix ASIC / Poikela, Tuomas Sakari (CERN)
LHCb-TALK-2016-342.- Geneva : CERN, 2016 - 29. Fulltext: PDF;
In : TWEPP 2016, Karlsruhe, Germany, 26 - 30 Sep 2016

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Readout Architecture for Hybrid Pixel Readout Chips / Poikela, Tuomas Sakari
The original contribution of this thesis to knowledge are novel digital readout architectures for hybrid pixel readout chips [...]
CERN-THESIS-2015-111 - 209 p.

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Također vidi: slična imena autora
14	Poikela, T
8	Poikela, T.
146	Poikela, Tuomas
2	Poikela, Tuomas Sakari

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