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1.
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Cryogenic Readout Electronics
/ Charbon, Edoardo (speaker) (EPFL)
The core of a quantum computer or a quantum sensor is generally an array of qubits or quantum detectors and classical electronics for its control; it operates on the qubits/detectors with nanosecond latency and a very low noise. Classical electronics is generally operating at room temperature, however recently, we have proposed that it moves closer to the qubits/detectors and operates at cryogenic temperatures to improve compactness and reliability [...]
2025 - 4138.
Detector Seminar
External link: Event details
In : Cryogenic Readout Electronics
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2.
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Further Characterisation of Digital Pixel Test Structures Implemented in a 65 nm CMOS Process
/ Rinella, Gianluca Aglieri (CERN) ; Apadula, Nicole (UC, Berkeley ; LBNL, Berkeley) ; Andronic, Anton (Munster U., ITP) ; Antonelli, Matias (INFN, Trieste) ; Aresti, Mauro (Cagliari U. ; INFN, Cagliari) ; Baccomi, Roberto (INFN, Trieste) ; Becht, Pascal (Warsaw U.) ; Beole, Stefania (Turin U. ; INFN, Turin ; Turin Observ.) ; Borri, Marcello (Daresbury) ; Braach, Justus (CERN ; Hamburg U.) et al.
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. [...]
arXiv:2505.05867.
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24.
Fulltext
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3.
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Quantum Computing/Sensing: Are Cryo-CMOS Circuits Essential?
/ Charbon, Edoardo (speaker) (EPFL)
The core of a quantum computer or a quantum sensor is generally an array of qubits or quantum detectors and classical electronics for its control; it operates on the qubits/detectors with nanosecond latency and a very low noise. Classical electronics is generally operating at room temperature, however recently, we have proposed that it moves closer to the qubits/detectors and operates at cryogenic temperatures to improve compactness and reliability. [...]
2025 - 3438.
General meetings; AIDAinnova Course on Quantum Applications
External links: Talk details; Event details
In : AIDAinnova Course on Quantum Applications
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4.
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CMOS SPADs for High Radiation Environments
/ Wu, Ming-Lo (Ecole Polytechnique, Lausanne) ; Gramuglia, Francesco (Ecole Polytechnique, Lausanne) ; Ripiccini, Emanuele (Ecole Polytechnique, Lausanne) ; Fenoglio, Carlo Alberto (Ecole Polytechnique, Lausanne) ; Kizilkan, Ekin (Ecole Polytechnique, Lausanne) ; Keshavarzian, Pouyan (Ecole Polytechnique, Lausanne) ; Morimoto, Kazuhiro (Ecole Polytechnique, Lausanne) ; Paolozzi, Lorenzo (Geneva U. ; CERN) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne)
We first characterized large 180 nm CMOS single-photon avalanche diode (SPAD) imagers under 10 and 100 MeV protons irradiation up to a displacement damage dose of 1 PeV/g. [...]
2022. - 3 p.
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5.
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Quad-module characterization with the MALTA monolithic pixel chip
/ Dachs, F (CERN) ; Zoubir, A M (Darmstadt, Tech. U.) ; Sharma, A (CERN) ; Solans Sanchez, C (CERN) ; Buttar, C M (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Dobrijevic, D (Zagreb U.) ; Berlea, D -V (DESY) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Piro, F (CERN) et al.
The MALTA silicon pixel detector combines a depleted monolithic active pixel sensor (DMAPS) with a fully asynchronous front-end and readout. It features a high granularity pixel matrix with a 36.4 μm symmetric pixel pitch, low power consumption of <1 μW/pixel and low material budget with detector thicknesses as little as 50 μm. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169306
In : PSD13: The 13th International Conference on Position Sensitive Detectors, Oxford, United Kingdom, 3 - 9 Sep 2023, pp.169306
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6.
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Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications
/ Berlea, D V (DESY, Zeuthen ; Humboldt U., Berlin (main)) ; Allport, P (Birmingham U.) ; Tortajada, I Asensi (CERN) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Dachs, F (CERN) ; Dao, V (CERN) ; Denizili, H (Abant Izzet Baysal U.) ; Dobrijevic, D (CERN) et al.
MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to lower material budget and ease of integration and construction costs due to the integration of read-out and active sensor into one ASIC. [...]
2023 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2303-2309
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7.
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A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology
/ Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Rinella, G Aglieri (CERN) ; Andronic, A (U. Munster) ; Antonelli, M (INFN, Trieste) ; Aresti, M (Cagliari U. ; INFN, Cagliari) ; Baccomi, R (INFN, Trieste) ; Becht, P (Heidelberg U.) ; Beolè, S (Turin U. ; INFN, Turin) ; Braach, J (CERN) ; Buckland, M D (INFN, Trieste ; Trieste U.) et al.
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (< 2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5×1.5 mm including a matrix of 32×32 pixels with a pitch of 15μm . [...]
2023 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2191-2200
Fulltext: PDF;
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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10.
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Performance of the MALTA Telescope
/ van Rijnbach, Milou (CERN ; Oslo U.) ; Gustavino, Giuliano (CERN) ; Allport, Phil (Birmingham U.) ; Asensi, Igancio (CERN) ; Berlea, Dumitru Vlad (DESY, Zeuthen) ; Bortoletto, Daniela (Oxford U.) ; Buttar, Craig (Glasgow U.) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne) ; Dachs, Florian (CERN) ; Dao, Valerio (CERN) et al.
MALTA is part of the Depleted Monolithic Active Pixel sensors designed in Tower 180nm CMOS imaging technology. A custom telescope with six MALTA planes has been developed for test beam campaigns at SPS, CERN, with the ability to host several devices under test. [...]
arXiv:2304.01104.-
2023-07-08 - 22 p.
- Published in : Eur. Phys. J. C 83 (2023) 581
Fulltext: 2304.01104 - PDF; document - PDF;
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