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1.
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Characterization of magnetic Czochralski silicon radiation detectors
/ Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363
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2.
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Technology development of p-type microstrip detectors with radiation hard p-spray isolation
/ Pellegrini, G (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.) ; Díez, S (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.)
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. [...]
2006 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 566 (2006) 360-365
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3.
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Silicon detectors for the sLHC
/ Affolder, A (Liverpool U.) ; Aleev, A (Moscow, ITEP) ; Allport, P P (Liverpool U.) ; Andricek, L (Munich, Max Planck Inst.) ; Artuso, M (Syracuse U.) ; Balbuena, J P (Barcelona, Inst. Microelectron.) ; Barabash, L (Kiev, INR) ; Barber, T (Freiburg U.) ; Barcz, A (Inst. Electron Tech., Warsaw ; Warsaw, Inst. Phys. Chem.) ; Bassignana, D (Barcelona, Inst. Microelectron.) et al.
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 658 (2011) 11-16
In : 8th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, 12 - 15 Oct 2010, pp.11-16
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4.
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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders
/ Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003.
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2010. - 73 p.
Fulltext
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5.
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6.
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7.
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Development of radiation hard semiconductor
: devices for very high luminosity colliders
/ Mauro De Palma, D (INFN, Bari) ; Radicci, V (INFN, Bari) ; Lozano, M (Barcelona, Autonoma U.) ; Campabadal, F (Barcelona, Autonoma U.) ; Ullán, M (Barcelona, Autonoma U.) ; Martínez, C (Barcelona, Autonoma U.) ; Fleta, C (Barcelona, Autonoma U.) ; Key, M (Barcelona, Autonoma U.) ; Raffí, J M (Barcelona, Autonoma U.) ; Kordas, G (Democritos Nucl. Res. Ctr.) et al.
CERN-LHCC-2002-003 ; LHCC-P-6.
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2002. - 36 p.
Full text - CERN library copies
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8.
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9.
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10.
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Pitch adaptors of the ATLAS-SCT Endcap detector modules
/ Ullán, M ; Lozano, M ; Campabadal, F ; Fleta, C ; Pellegrini, G ; García, C ; González, F
Interconnection between detectors and electronics in modern High Energy Physics has become an issue of difficult solution due to the need to integrate both parts in the same module and the need for a low mass, simple connection. The Endcap section of the Semiconductor Tracker (SCT) of the ATLAS experiment at CERN has adopted the solution of using interface devices called pitch adaptors or fan-ins that, mounted on the modules, and using automatic wire bonding, connect the detector's multiple channels to the front-end electronics, adapting their different designs (pad pitch, dimensions, position). [...]
2007
- Published in : JINST 2 (2007) T10001
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