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1.
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Selection of 8-channel silicon phototransistor arrays for space applications, based on wafer-level radiation and high-temperature storage tests
/ Vakili, Aref Eshkevar (INFN, Catania ; CERN) ; Bregoli, Matteo ; Ceriani, Silvia ; Bassetti, Daniel ; Ficorella, Francesco (Fond. Bruno Kessler, Trento) ; Pancheri, Lucio (Trento U.) ; Bringer, Charlotte (ESTEC, Noordwijk)
One of the aspects that semiconductor devices have to cope with in space applications is radiation induced damage. Therefore, radiation hardness studies are crucial for the space missions and a comprehensive on-ground testing of the components
needs to be performed aiming at identifying the most radiation tolerant technologies. [...]
2022 - 23 p.
- Published in : CEAS Space J. 14 (2022) 263-285
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2.
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Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation
/ Senger, Matias (University of Zurich (CH)) ; Borghi, Giacomo (FBK - Fondazione Bruno Kessler (IT)) ; Boscardin, Maurizio (Universita degli Studi di Trento and INFN (IT)) ; Centis Vignali, Matteo (FBK - Fondazione Bruno Kessler (IT)) ; Kilminster, Ben (University of Zurich (CH)) ; Macchiolo, Anna (University of Zurich (CH)) ; Paternoster, Giovanni (FBK - Fondazione Bruno Kessler (IT)) ; Bisht, A (FBK) ; Ficorella, F (FBK) ; Hammad Ali, O (FBK)
The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). [...]
AIDAinnova-CONF-2023-002.-
Geneva : CERN, 2022
- Published in : 10.1016/j.nima.2022.167030
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3.
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Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors
/ Carnesecchi, F. (CERN) ; Strazzi, S. (U. Bologna, DIFA) ; Alici, A. (U. Bologna, DIFA) ; Arcidiacono, R. (INFN, Turin ; Piemonte Orientale U., Alessandria) ; Borghi, G. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Boscardin, M. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Cartiglia, N. (INFN, Turin) ; Centis Vignali, M. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Cavazza, D. (INFN, Bologna) ; Dalla Betta, G. -F. (U. Trento (main) ; TIFPA-INFN, Trento) et al.
This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $\mu$m and 35 $\mu$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$\mu$m thick sensor, taken as reference. [...]
arXiv:2208.05717.-
2023-01-30 - 11 p.
- Published in : Eur. Phys. J. Plus 138 (2023) 99
Fulltext: 2208.05717 - PDF; document - PDF;
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4.
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LPNHE-FBK Thin n-on-p Pixel Sensors for HL-LHC Upgrade and Beyond
/ Calderini, G (Paris U., VI-VII) ; Bomben, M (Paris U., VI-VII) ; Boscardin, M (Fond. Bruno Kessler, Povo) ; Bosisio, L (INFN, Trieste ; Trieste U.) ; Borghi, G (Fond. Bruno Kessler, Povo) ; Camacho, R (Paris U., VI-VII) ; Crescioli, F (Paris U., VI-VII) ; Betta, G F Dalla (Trento U. ; INFN, Trento) ; Ficorella, F (Fond. Bruno Kessler, Povo) ; Giacomini, G (Brookhaven) et al.
In view of the LHC upgrade phase towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. [...]
2021 - 7 p.
- Published in : JPS Conf. Proc. 34 (2021) 010021
Fulltext: PDF;
In : 29th International Workshop on Vertex Detectors, Virtual, Japan, 5 - 8 Oct 2020, pp.010021
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5.
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First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking
/ Mandurrino, M. (INFN, Turin) ; Arcidiacono, R. (INFN, Turin ; CERN ; Piemonte Orientale U., Novara) ; Boscardin, M. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Cartiglia, N. (INFN, Turin) ; Dalla Betta, G.F. (INFN, Trento ; TIFPA-INFN, Trento ; Trento U.) ; Ferrero, M. (INFN, Turin ; Turin U.) ; Ficorella, F. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Pancheri, L. (INFN, Trento ; TIFPA-INFN, Trento ; Trento U.) ; Paternoster, G. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Siviero, F. (INFN, Turin ; Turin U.) et al.
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. [...]
arXiv:1907.03314.-
2019-09-23 - 4 p.
- Published in : IEEE Electron. Dev. Lett. 40 (2019) 1780
Fulltext: PDF;
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6.
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First Production of 50-µm-thick Resistive AC-Coupled Silicon Detectors (RSD) at FBK
/ Mandurrino, M (INFN, Turin) ; Arcidiacono, R (CERN) ; Boscardin, M (Fond. Bruno Kessler, Trento) ; Cartiglia, N (INFN, Turin) ; Dalla Betta, G F (Trento U.) ; Ferrero, M (Piemonte Orientale U., Novara) ; Ficorella, F (Fond. Bruno Kessler, Trento) ; Pancheri, L (Trento U.) ; Paternoster, G (Fond. Bruno Kessler, Trento) ; Siviero, F (INFN, Turin) et al.
Resistive AC-Coupled Silicon Detectors (RSD) represent a new frontier in 4D particle tracking through silicon detectors with intrinsic gain. In this work we present the experimental characterization done on the first run of sensors, RSD1, produced at Fondazione Bruno Kessler (FBK) in Trento, Italy..
IEEE, 2019 - 3 p.
- Published in : 10.1109/NSS/MIC42101.2019.9060007
In : 2019 IEEE Nuclear Science Symposium (NSS) and Medical Imaging Conference (MIC), Manchester, United Kingdom, 26 Oct - 2 Nov 2019, pp.1-3
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7.
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State-of-the-art and evolution of UFSD sensors design at FBK
/ Arcidiacono, R. (INFN Torino, Universita del Piemonte Orientale) ; Ferrero, M. (INFN Torino, Universita del Piemonte Orientale) ; Cartiglia, N. INFN Torino ; Costa, M. (INFN Torino) ; Fausti, F. (INFN Torino) ; Mandurrino, M. (INFN Torino) ; Olave, J. (INFN Torino) ; Siviero, F. (INFN Torino) ; Sola, V. (INFN Torino) ; Staiano, A. (INFN Torino) et al.
AIDA-2020-SLIDE-2020-020.-
Geneva : CERN, 2020
Fulltext: PDF;
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8.
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Signal formation and designed optimization of Resistive AC-LGAD (RSD)
/ Cartiglia, N (INFN) ; Arcidiacono, R. (INFN, Universita del Piemonte Orientale) ; Dalla Betta, G-F. (INFN, Universita di Trento) ; Borghi, G. (TIPFA-FBK) ; Boscardin, M. (TIPFA-FBK) ; Costa, M. (INFN, Universita di Torino) ; Fausti, F. (INFN, Universita di Torino) ; Ficorella, F. (TIPFA-FBK) ; Ferrero, M. (INFN, Universita del Piemonte Orientale) ; Mandurrino, M. (INFN) et al.
AIDA-2020-SLIDE-2020-012.-
Geneva : CERN, 2020
Fulltext: PDF;
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9.
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Silicon Sensors for Future Particle Trackers
/ Cartiglia, N. (INFN Torino) ; Arcidiacono, R. (INFN Torino, Universita del Piemonte Orientale) ; Borghi, G. (FBK, TIFPA-INFN) ; Boscardin, M. (FBK, TIFPA-INFN) ; Costa, M. (INFN Torino, Universita di Torino) ; Galloway, Z. (SCIPP, University of California Santa Cruz) ; Fausti, F. (INFN Torino, Universita di Torino, DE.TEC.TOR.) ; Ferrero, M. (INFN Torino, Universita del Piemonte Orientale) ; Ficorella, F. (FBK, TIFPA-INFN) ; Mandurrino, M. (INFN Torino) et al.
Several future high-energy physics facilities are currently being planned. The
proposed projects include high energy e+e− circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. [...]
AIDA-2020-PUB-2020-005; arXiv:2003.13990.-
Geneva : CERN, 2020
- Published in : Nucl. Instrum. Methods Phys. Res., A 979 (2020) 164383
Fulltext: PDF;
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10.
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High performance picosecond- and micron-level 4D particle tracking with 100% ll-factor Resistive AC-Coupled Silicon Detectors (RSD)
/ Mandurrino, M. (INFN Torino) ; Cartiglia, N. (INFN Torino) ; Tornago, M. (INFN Torino, Universita degli Studi di Torino) ; Ferrero, M. (Universita del Piemonte Orientale) ; Siviero, F. (INFN Torino, Universita degli Studi di Torino) ; Paternoster, G. (FBK, TIFPA-INFN) ; Ficorella, F. (FBK, TIFPA-INFN) ; Boscardin, M. (FBK, TIFPA-INFN) ; Pancheri, L. (TIFPA-INFN, Universita degli Studi di Trento) ; Dalla Betta, G.-F. (TIFPA-INFN, Universita degli Studi di Trento)
In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. [...]
AIDA-2020-PUB-2020-002 ; arXiv:2003.04838.
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2020.
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