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CERN Document Server 22 notices trouvées  1 - 10suivantfin  aller vers la notice: La recherche a duré 0.61 secondes. 
1.
Investigation on ATLAS silicon microstrip detectors with transient current/charge technique / Ruggiero, G ; Eremin, V V ; Roe, S ; Weilhammer, Peter
The ATLAS experiment, designed for the forthcoming LHC machine at CERN, will include a large silicon microstrip-tracking detector. This detector must operate in a high radiation environment for at least 10 years, maintaining a satisfactory detector performance despite the progressive degradation in the properties of silicon. [...]
2003
In : International Symposium of Young Scholars on Mechanics and Material Engineering for Science and Experiments, Changsha, China, 11 - 16 Aug 2001, pp.193-196
2.
The charge collection in single side silicon microstrip detectors / Eremin, V V ; Böhm, J ; Roe, S ; Ruggiero, G ; Weilhammer, Peter
The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. [...]
2003 - Published in : Nucl. Instrum. Methods Phys. Res., A 500 (2003) 121-132
3.
Detector development for TOTEM Roman pots / Grohmann, S ; Eremin, V V ; Kienzle, W ; Li, Z ; Niinikoski, T O ; Oriunno, M ; Perea-Solano, B ; Verbitskaya, E /RD39 Collaboration
Geneva : CERN, 2002
In : 9th Blois Workshop on Elastic and Diffractive Scattering, Pruhonice, Czech Republic, 9 - 15 Jun 2001, pp.363-374
4.
Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures / Eremin, V V ; Li, Z ; Verbitskaya, E
This study presents the results on the modeling of the electric field distribution, which is controlled by injection and trapping of non- equilibrium carriers, in Si detectors irradiated by high neutron fluences. Analytical calculation of the electric field distribution in detectors irradiated by neutron fluences of H-10**1**4 to 5-10**1**5 cm**-**2 has been performed, which shows possibility of full depletion voltage reduction at low operational temperatures with hole injection. [...]
2002 - Published in : IEEE Trans. Nucl. Sci. 49 (2002) 258-63
In : 47th IEEE Nuclear Science Symposium and Medical Imaging Conference, Lyons, France, 15 - 20 Oct 2000, pp.3/88-3/92 (v.1)
5.
Silicon detectors irradiated "in situ" at cryogenic temperatures / Ruggiero, G ; Abreu, M ; Bell, W ; Berglund, P ; de Boer, Wim ; Borer, K ; Buontempo, S ; Casagrande, L ; Chapuy, S ; Cindro, V et al.
Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated "in situ" at low temperatures. In this work, effects of irradiation of 450 GeV protons at 83 K will be presented, showing that after a dose of 1.2 * 10/sup 15/ p cm/sup -2/ a charge collection efficiency (CCE) of 55% is reached at 200 V before the annealing. [...]
Geneva : CERN, 2002 - Published in : Nucl. Instrum. Methods Phys. Res., A 476 (2002) 583-7
6.
Summary, plan and resources of RD39 projects / Borer, K ; Janos, S ; Pretzl, Klaus P ; Wei Chen ; Chen Li ; Da Vià, C ; Granata, V ; Casagrande, L ; Collins, P ; Grhmann, S et al.
CERN-LHCC-2002-015 ; LHCC-RD-39-ADD-1.
- 2002.
Full text - Full text - CERN library copies
7.
Review on the development of cryogenic silicon detectors / RD39 Collaboration
In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed then show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude, in particular, a 400 mu m thick "double-p" silicon detector irradiated up to 1*10 /sup 15/ n/cm/sup 2/ delivers a mip signal of about 27000 electrons when operated at 130 K and 500 V bias. [...]
Geneva : CERN, 2001 - Published in : Nucl. Instrum. Methods Phys. Res., A 461 (2001) 150-4
8.
Cryogenic technology for tracking detectors / Granata, V ; Da Vià, C ; Watts, S ; Borer, K ; Janos, S ; Pretzl, Klaus P ; Dezillie, B ; Li, Z ; Casagrande, L ; Collins, P et al.
A low-mass cryogenic cooling technique for silicon sensor modules has been developed in the framework of the RD39 Collaboration at CERN. A prototype low-mass beam tracker cryostat has been designed, constructed and tested for applications in fixed target experiments. [...]
2001 - Published in : Nucl. Instrum. Methods Phys. Res., A 461 (2001) 197-9
9.
RD39 Status Report / RD39 Collaboration
CERN-LHCC-2000-010.
- 2000. - 44 p.
Full text - Access to fulltext document - CERN library copies
10.
Developments for Radiation Hard Silicon Detectors by Defect Engineering : Results by the CERN RD48 (ROSE) Collaboration / ROSE Collaboration
Geneva : CERN, 2000 Fulltext: PDF; Published version from CERN: PDF;
In : 6th Workshop on Electronics for LHC Experiments, Krakow, Poland, 11 - 15 Sep 2000, pp.280-285 (CERN-2000-010)

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Voir aussi: noms d'auteurs similaires
96 Eremin, V
1 Eremin, V I
1 Eremin, V K
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