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A generalized EKV charge-based MOSFET model including oxide and interface traps
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Mattiazzo, Serena (CERN) ; Baschirotto, Andrea (INFN, Padua) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges
in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface trapped charges, the mobile charge density can still be linearized but with respect to both the surface potential and the channel voltage. [...]
2021 - 9 p.
- Published in : Solid State Electron. 177 (2021) 107951
Fulltext: PDF;
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2.
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Characterization of GEMINI, a 16-channels programmable readout interface for Triple-GEM detectors in 180nm CMOS
/ Mangiagalli, Luca ; Croci, Gabriele ; De Matteis, Marcello ; Tagnani, Diego ; Corradi, Giovanni ; Murtas, Fabrizio ; Gorini, Giuseppe ; Baschirotto, Andrea
The recent advances in GEM detector development has led to the requirement of a custom readout to fully exploit the advantages of this technology. GEM detectors can be realized with various shapes, also irregular, and high number of channels. [...]
SISSA, 2019 - 5 p.
- Published in : PoS TWEPP2018 (2019) 165
In : Topical Workshop on Electronics for Particle Physics, Antwerp, Belgique, 17 - 21 Sep 2018, pp.165
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3.
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Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Mattiazzo, Serena (INFN, Padua ; U. Padua (main)) ; Baschirotto, Andrea (INFN, Milan Bicocca ; Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
/ScalTech28project
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems..
2019 - 3 p.
- Published in : 10.1109/NSSMIC.2018.8824379
In : 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2018), Sydney, Australia, 10 - 17 Nov 2018, pp.8824379
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4.
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An 8-Channel ASD in 130 nm CMOS for ATLAS Muon Drift Tube Readout at the HL-LHC
/ Fras, Markus (Dresden, Max Planck Inst.) ; Abovyan, Sergey (Munich, Max Planck Inst.) ; Danielyan, Varuzhan (Munich, Max Planck Inst.) ; Kroha, Hubert (Munich, Max Planck Inst.) ; Nowak, Sebastian (Munich, Max Planck Inst.) ; Richter, Robert (Munich, Max Planck Inst.) ; Weber, Bradley (Munich, Max Planck Inst.) ; Zhao, Yazhou (Munich, Max Planck Inst.) ; Baschirotto, Andrea (Milan Bicocca U.) ; De Matteis, Marcello (Milan Bicocca U.) et al.
Spatial resolution and efficiency of the ATLAS muon Monitored Drift Tubes (MDT) depend on drift time resolution, noise levels, and accurate threshold setting. A new 130~nm readout device is developed and optimized for the required time resolution, to guarantee rise times below 10~ns with acceptable time slewing effects. [...]
SISSA, 2018 - 5 p.
- Published in : PoS TWEPP-17 (2017) 004
Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.004
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5.
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Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Baschirotto, Andrea (Milan Bicocca U. ; INFN, Milan Bicocca) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO$_2$) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced lateral parasitic devices, which contribute the most to the significant increase up to four orders of magnitude in the drain leakage current. [...]
2018 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2018) 38-47
Fulltext: PDF;
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6.
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An eight-channels 0.13-$\mu \text{m}$-CMOS front end for ATLAS muon-drift-tubes detectors
/ De Matteis, Marcello (Milan Bicocca U.) ; Resta, Federica (Milan Bicocca U.) ; Richter, Robert (Munich, Max Planck Inst.) ; Kroha, Hubert (Munich, Max Planck Inst.) ; Fras, Markus (Munich, Max Planck Inst.) ; Zhao, Yazhou (Munich, Max Planck Inst.) ; Abovyan, Sergey (Munich, Max Planck Inst.) ; Baschirotto, Andrea (Milan Bicocca U.)
Abstract: An eight-channel readout front end for Large Hadron Collider (LHC) ATLAS muon-drift-tubes detectors is hereby presented (defined 8 × AFE). The system is composed by the cascade of the analog signal processing front end and the Wilkinson A/D, performing both time-over-threshold and charge measurement. [...]
2017 - 10 p.
- Published in : IEEE Sensors J. 17 (2017) 3406-3415
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7.
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Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Pezzotta, Alessandro (Ecole Polytechnique, Lausanne) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (U. Padua (main)) ; Baschirotto, Andrea (Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex interplay of oxide and interface charge trapping relevant to the gate-related dielectrics and the shallow trench isolation. [...]
2017 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 64 (2017) 2639-2647
Fulltext: PDF;
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8.
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A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment
/ Vergine, Tommaso (Pavia U.) ; De Matteis, Marcello (Milan Bicocca U.) ; Michelis, Stefano (CERN) ; Traversi, Gianluca (Bergamo U.) ; De Canio, F (Pavia U.) ; Baschirotto, Andrea (Milan Bicocca U.)
A radiation-hard BGR (bandgap voltage reference) circuit is here presented. It's able to maintain the output voltage accuracy over process, voltage, and temperature (PVT) variations, combined with extremely high total-ionizing-dose (up to 800 Mrad (SiO2)), as required by the next experiments upgrades of the Large Hadron Collider (LHC). [...]
2016 - 6 p.
- Published in : IEEE Trans. Nucl. Sci. 63 (2016) 1762-1767
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9.
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Performance of the new amplifier-shaper-discriminator chip for the ATLAS MDT chambers at the HL-LHC
/ Kroha, Hubert (Munich, Max Planck Inst.) ; Abovyan, Sergey (Munich, Max Planck Inst.) ; Baschirotto, Andrea (Milan Bicocca U.) ; Danielyan, Varuzhan (Munich, Max Planck Inst.) ; Fras, Markus (Munich, Max Planck Inst.) ; Müller, Felix (Munich, Max Planck Inst.) ; Nowak, Sebastian (Munich, Max Planck Inst.) ; Resta, Federica (Milan Bicocca U.) ; De Matteis, Marcello (Milan Bicocca U.) ; Richter, Robert (Munich, Max Planck Inst.) et al.
The Phase-II Upgrade of the ATLAS Muon Detector requires new electronics for the readout of the MDT drift tubes. The first processing stage, the Amplifier-Shaper-Discriminator (ASD), determines the performance of the readout for crucial parameters like time resolution, gain uniformity, efficiency and noise rejection. [...]
arXiv:1603.09093; MPP-2015-283; MPP-2015-283.-
2016-10-06 - 2 p.
- Published in : 10.1109/NSSMIC.2015.7581979
Fulltext: PDF; External link: Preprint
In : 2015 IEEE Nuclear Science Symposium and Medical Imaging Conference, San Diego, CA, USA, 31 Oct - 7 Nov 2015, pp.7581979
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