|
1.
|
|
Pushing the Limits: Advanced SiC Detectors for Operation in Harsh Environments
/ Pellegrini, Giulio (speaker) (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
Silicon carbide (SiC) detectors are emerging as key components for radiation monitoring in extreme environments, including ultra-high dose rate (UHDR) FLASH radiotherapy, nuclear physics, high energy physics and plasma diagnostic in fusion reactors. This talk will present the technological development and characterization of SiC p–n diodes for UHDR dosimetry and neutron detection [...]
2025 - 3939.
Detector Seminar
External link: Event details
In : Pushing the Limits: Advanced SiC Detectors for Operation in Harsh Environments
|
|
|
2.
|
Evaluation of 3D sensors for fast timing applications
/ Diehl, Leena (CERN) ; Argyropoulos, Spyros (Freiburg U.) ; Ferrer, Oscar (Barcelona, Inst. Microelectron.) ; Hauser, Marc (Freiburg U.) ; Jakobs, Karl (Freiburg U.) ; King, Montague (Freiburg U. ; CERN) ; Lex, Fabian (Freiburg U.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Parzefall, Ulrich (Freiburg U.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) et al.
Novel collider experiments demand an increased performance of the silicon detectors used, such as withstanding up to 1×1017neq/cm2 in unprecedented pile-up conditions and providing time resolution around 10ps. Currently, Low Gain Avalanche Diodes (LGADs) are the standard, achieving resolutions below 30ps. [...]
2024 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169517
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169517
|
|
|
3.
|
|
|
4.
|
Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
/ Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Dauderys, Vainius (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation harsh environments and for elevated temperature operation. In this work, radiation effects in electron-, neutron-, and proton-irradiated 4H-SiC p-n junction diodes are investigated by means of electrical characterization, including current–voltage characteristics measured at different temperatures ranging from −50 °C to +200°C. [...]
2023 - 12 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2285-2296
External link: accepted manuscript
|
|
|
5.
|
Overview of CNM LGAD results: boron Si-on-Si and epitaxial wafers
/ Grieco, Chiara (Barcelona, IFAE) ; Castillo García, Lucía (Barcelona, IFAE) ; Moreno, Albert Doblas (Barcelona, Inst. Microelectron.) ; Gkougkousis, Evangelos Leonidas (CERN) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona ; Barcelona, Autonoma U.) ; Hidalgo, Salvador (Barcelona, Inst. Microelectron.) ; Moffat, Neil (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Villegas Dominguez, Jairo (Barcelona, Inst. Microelectron.)
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are created that enhance the generated signal. [...]
arXiv:2209.11552.-
2022-09-20 - 9 p.
- Published in : JINST
Fulltext: PDF;
In : 12th International Conference on Positional Sensitive Detectors, Online, Online, 12 - 17 Sep 2021, pp.C09021
|
|
|
6.
|
Study of Ionization Charge Density-Induced Gain Suppression in LGADs
/ Jiménez-Ramos, M Carmen (CNA, Seville ; Seville U.) ; Garcia López, Javier (CNA, Seville ; Seville U.) ; Garcia Osuna, Adrián (CNA, Seville) ; Vila, Iván (Cantabria Inst. of Phys.) ; Currás, Esteban (CERN) ; Jaramillo, Richard (Cantabria Inst. of Phys.) ; Hidalgo, Salvador (Barcelona, Autonoma U.) ; Pellegrini, Giulio (Barcelona, Autonoma U.)
Gain suppression induced by excess carriers in Low Gain Avalanche Detectors (LGADs) has been investigated using 3 MeV protons in a nuclear microprobe. In order to modify the ionization density inside the detector, Ion Beam Induced Current (IBIC) measurements were performed at different proton beam incidence angles between 0$^{\circ}$ and 85$^{\circ}$ The experimental results have been analyzed as a function of the ionization density projected on the multiplication layer, finding that the increase of ionization density leads to greater gain suppression. [...]
2022 - 17 p.
- Published in : Sensors 22 (2022) 1080
Fulltext: PDF;
|
|
|
7.
|
Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
/ Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Ugobono, Sofía Otero (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. [...]
2020 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 67 (2020) 2481-2489
|
|
|
8.
|
A new generation of radiation hard 3D pixel sensors for the ATLAS upgrade
/ Terzo, Stefano (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Manna, Maria (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.)
The ATLAS experiment at the Large Hadron Collider (LHC) will replace its inner tracker system to cope with the extreme particle fluence expected after the High Luminosity upgrade of the accelerator (HL-LHC). The 3D silicon sensor technology has been selected as baseline to instrument the innermost layer of the pixel detector in the future ATLAS Inner Tracker (ITk). [...]
2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 982 (2020) 164587
|
|
|
9.
|
Multiplication onset and electric field properties of proton irradiated LGADs
/ Ugobono, Sofia Otero (U. Santiago de Compostela (main) ; CERN) ; Centis Vignali, Matteo (CERN) ; Fernandez Garcia, Marcos (CERN ; Cantabria U., Santander) ; Gallrapp, Christian ; Hidalgo Villena, Salvador ; Mateu, Isidre ; Moll, Michael ; Pellegrini, Giulio ; Barroso, Ana Ventura (CERN ; U. Barcelona (main)) ; Vila, Ivan (Cantabria U., Santander)
This work focuses on the study of a set of Low Gain Avalanche Detectors (LGADs) produced by CNM, Barcelona (run 7859). Several samples were irradiated with 24-GeV/c protons up to different fluences, ranging between 10$^{12}$ and 10$^{15}$ n$_\textrm{eq}$/cm$^2$. [...]
SISSA, 2018 - 14 p.
- Published in : PoS Vertex2017 (2018) 041
Fulltext: PDF;
In : The 26th International Workshop on Vertex Detectors, Las Caldas, Spain, 10 - 15 Sep 2017, pp.041
|
|
|
10.
|
Study of the radiation-induced damage mechanism in proton irradiated low gain avalanche detectors and its thermal annealing dependence
/ Wiehe, Moritz (CERN ; Freiburg U.) ; Fernández García, Marcos (CERN ; Cantabria Inst. of Phys.) ; Hidalgo, Salvador (Barcelona, Inst. Microelectron.) ; Moll, Michael (CERN) ; Otero Ugobono, Sofia (CERN ; Santiago de Compostela U.) ; Parzefall, Ulrich (Freiburg U.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Ventura Barroso, Ana (CERN ; Barcelona U.) ; Vila Alvarez, Ivan (Cantabria Inst. of Phys.)
In this study the effects of proton irradiation and annealing on Low Gain Avalanche Detectors (LGADs) are investigated. Two LGADs and one p-in-n diode, produced by CNM (Centre Nacional de Microelectrònica 2018), were irradiated with 24 GeV∕c -protons to a fluence of 1×10$^{14}$n$_{eq}$∕cm$^{2}$ and annealed at 60°C for up to 5000 min . [...]
2021 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 986 (2021) 164814
Fulltext: PDF;
|
|
alerta personal vía correo electrónico o subscríbase al 
canal RSS.