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Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Aglietta, Luca (INFN, Turin ; Turin U.) ; Antonelli, Matias (INFN, Trieste) ; Barile, Francesco (INFN, Bari ; Bari U.) ; Benotto, Franco (INFN, Turin) ; Beolè, Stefania Maria (INFN, Turin ; Turin U.) ; Botta, Elena (INFN, Turin ; Turin U.) ; Bruno, Giuseppe Eugenio (Bari Polytechnic ; INFN, Bari) ; Carnesecchi, Francesca (CERN) ; Colella, Domenico (INFN, Bari ; Bari U.) et al.
In the context of the CERN EP R&D; on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. [...]
arXiv:2407.18528.-
2024-11-12 - 27 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170034
Fulltext: PDF;
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2.
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Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) et al.
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. [...]
arXiv:2403.08952.-
2024-09-21 - 40 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896
Fulltext: 2403.08952 - PDF; Publication - PDF;
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3.
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A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology
/ Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Rinella, G Aglieri (CERN) ; Andronic, A (U. Munster) ; Antonelli, M (INFN, Trieste) ; Aresti, M (Cagliari U. ; INFN, Cagliari) ; Baccomi, R (INFN, Trieste) ; Becht, P (Heidelberg U.) ; Beolè, S (Turin U. ; INFN, Turin) ; Braach, J (CERN) ; Buckland, M D (INFN, Trieste ; Trieste U.) et al.
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (< 2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5×1.5 mm including a matrix of 32×32 pixels with a pitch of 15μm . [...]
2023 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2191-2200
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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5.
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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6.
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Development of a Stitched Monolithic Pixel Sensor prototype (MOSS chip) towards the ITS3 upgrade of the ALICE Inner Tracking system
/ Vicente Leitao, P (CERN) ; Aglieri Rinella, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Cecconi, L (CERN) ; de Melo, J L A (CERN) ; De Robertis, G (INFN, Bari ; Bari U.) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Dorda Martin, A (CERN ; KIT, Karlsruhe) ; Dorosz, P (CERN) ; Fang, X (Strasbourg, IPHC) et al.
The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a single-die monolithic pixel detector of 1.4 cm × 26 cm. [...]
2023 - 8 p.
- Published in : JINST 18 (2023) C01044
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01044
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7.
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8.
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Digital Pixel Test Structures implemented in a 65 nm CMOS process
/ Rinella, Gianluca Aglieri (CERN) ; Andronic, Anton (Munster U.) ; Antonelli, Matias (INFN, Trieste ; Trieste U.) ; Aresti, Mauro (Cagliari U. ; INFN, Cagliari) ; Baccomi, Roberto (INFN, Trieste ; Trieste U.) ; Becht, Pascal (U. Heidelberg (main)) ; Beole, Stefania (Turin U. ; INFN, Turin) ; Braach, Justus (CERN ; Hamburg U.) ; Buckland, Matthew Daniel (INFN, Trieste ; Trieste U.) ; Buschmann, Eric (CERN) et al.
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D; on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. [...]
arXiv:2212.08621.-
2023-08-04 - 13 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168589
Fulltext: 2212.08621 - PDF; Publication - PDF;
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9.
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Letter of Intent: the NA60+ experiment
/ NA60+ Collaboration
We propose a new fixed-target experiment for the study of electromagnetic and hard probes of the Quark-Gluon Plasma (QGP) in heavy-ion collisions at the CERN SPS. [...]
arXiv:2212.14452 ; CERN-SPSC-2022-036 / SPSC-I-259.
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101 p.
Fulltext
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10.
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Letter of Intent: the NA60+ experiment
/ NA60+ Collaboration
We propose a new fixed-target experiment for the study of electromagnetic and hard probes of the Quark-Gluon Plasma (QGP) in heavy-ion collisions at the CERN SPS. [...]
CERN-SPSC-2022-036 ; SPSC-I-259.
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2022.
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