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CMOS Monolithic Active Pixel Sensors: challenges and perspectives
/ Snoeys, Walter (speaker) (CERN)
CMOS cameras revolutionized the visible imaging world, and now move into other fields. CMOS Monolithic Active Pixel Sensors (CMOS MAPS) have been successfully used in the STAR experiment and are now taking data in the 10 m2 Inner Tracker System (ITS2) of the ALICE experiment at CERN. CMOS MAPS in high energy physics (HEP) continue to be the object of intense research and development, for instance in EP R&D WP1.2 and DRDs, and for future ALICE and LHCb upgrades, and detectors at FCC. CMOS MAPS for HEP face very different requirements, but their development greatly benefits from the progress of CMOS imagers for visible light, the integration offered by stitching and wafer stacking, as well as trends in mainstream CMOS.
3D wafer stacking and stitching are now well established for CMOS sensors for visible light, and stacking is also now intensely pursued in mainstream CMOS. [...]
2024 - 4303.
Detector Seminar
External link: Event details
In : CMOS Monolithic Active Pixel Sensors: challenges and perspectives
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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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Eleventh International Workshop on Semiconductor Pixel Detectors for Particles and Imaging - Pixel 2024
18 - 22 Nov 2024
- Strasbourg, Grand Est, Fr
/ Arbor, N (ed.) (Université de Strasbourg); Andrea, J (ed.) (Université de Strasbourg); Besson, A (ed.) (Université de Strasbourg); Baudot, J (ed.) (Université de Strasbourg); Colledani, C (ed.) (Université de Strasbourg); Chabert, E (ed.) (Université de Strasbourg); El Bitar, Z (ed.) (Université de Strasbourg); Finck, C (ed.) (Université de Strasbourg); Hu-Guo, C (ed.) (Université de Strasbourg); Kachel, M (ed.) (Université de Strasbourg) et al.
2024
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Future developments of radiation tolerant sensors based on the MALTA architecture
/ Dobrijević, D (CERN ; Zagreb U.) ; Allport, P (Birmingham U.) ; Asensi, I (CERN) ; Berlea, D (DESY, Zeuthen) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Dachs, F (CERN) ; Dao, V (CERN) ; Denizli, H (Abant Izzet Baysal U.) ; Sanz de Acedo, L F (CERN) et al.
The planned MALTA3 DMAPS designed in the standard TowerJazz 180 nm imaging process will implement the numerous process modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1 × 10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The effectiveness of these changes have been demonstrated with recent measurements of the full size MALTA2 chip. [...]
2023 - 9 p.
- Published in : JINST
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C03013
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Development of the radiation-hard MALTA CMOS sensor for tracking applications
/ Gustavino, G (CERN) ; Allport, P (Birmingham U.) ; Asensi Tortajada, I (CERN) ; Behera, P (Indian Inst. Tech., Madras) ; Berlea, D V (DESY, Zeuthen) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Dachs, F (CERN) ; Dao, V (CERN) ; Dash, G (Indian Inst. Tech., Madras) et al.
The MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) is produced using Tower 180 nm CMOS technology, specifically targeting radiation-hard applications in the HL-LHC and beyond. Several process modifications have resulted in radiation hardness up to ${3 \times 10^{15}~1 ~\text{MeV}~\text{n}_{\text{eq}} /\text{cm}^2}$ and time resolution below 2 ns, with uniform charge collection efficiency across the chip formed of $512 \times 224$ pixels with a size of $36.4 \times 36.4~\mu\text{m}^2$. [...]
2024 - 7 p.
- Published in : PoS VERTEX2023 (2024) 048
Fulltext: PDF;
In : 32nd International Workshop on Vertex Detectors (VERTEX 2023), Sestri Levante, Italy, 16 - 20 Oct 2023, pp.048
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Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Aglietta, Luca (INFN, Turin ; Turin U.) ; Antonelli, Matias (INFN, Trieste) ; Barile, Francesco (INFN, Bari ; Bari U.) ; Benotto, Franco (INFN, Turin) ; Beolè, Stefania Maria (INFN, Turin ; Turin U.) ; Botta, Elena (INFN, Turin ; Turin U.) ; Bruno, Giuseppe Eugenio (Bari Polytechnic ; INFN, Bari) ; Carnesecchi, Francesca (CERN) ; Colella, Domenico (INFN, Bari ; Bari U.) et al.
In the context of the CERN EP R&D; on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. [...]
arXiv:2407.18528.-
2024-11-12 - 27 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170034
Fulltext: PDF;
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Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
/ Wennlöf, Håkan (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Huth, Lennart (DESY) ; Lachnit, Stephan (DESY ; Hamburg U.) ; Mendes, Larissa (DESY ; Bonn U.) et al.
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. [...]
arXiv:2408.00027.
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