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Study of the radiative decay of the low-energy isomer in $^{229}$Th
/ Chhetri, Premaditya (KU Leuven) ; Bara, Silvia (KU Leuven) ; Beeks, Kjeld (TU Wein) ; Bernerd, Cyril (KU Leuven, CERN) ; Block, Michael (GSI Darmstadt, HIM Mainz, University of Mainz) ; Claessens, Arno (KU Leuven) ; Cocolios, Thomas Elias (KU Leuven) ; Martins Correia, João Guilherme (Universidade de Lisboa) ; Granadeiro Costa, Angelo Rafael (KU Leuven) ; Cottenier, Stefaan (Ghent University) et al.
CERN-INTC-2022-017 ; INTC-P-628.
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2022.
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Lattice sites of implanted Na in GaN and AlN in comparison to other light alkalis and alkaline earths
/ Wahl, Ulrich (Universidade de Lisboa (PT)) ; David Bosne, Eric (Universidade de Lisboa (PT)) ; Amorim, Lígia (KU Leuven) ; Granadeiro Costa, Angelo Rafael (Universidade de Lisboa (PT)) ; De Vries, Bart (KU Leuven) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; da Silva, Manuel Ribeiro (CICECO Aveiro) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE)) ; Vantomme, André (KU Leuven)
/IS634 Collaboration
The lattice location of ion implanted radioactive 24Na (t1/2=14.96 h) in GaN and AlN was determined using the emission channeling technique at the ISOLDE/CERN facility. In the room temperature as-implanted state in both GaN and AlN, the majority of the sodium atoms are found on interstitial sites near the octahedral position, with a minority on cation Ga or Al substitutional sites. [...]
CERN-ISOLDE-2021-003.-
2020 - 12 p.
- Published in : J. Appl. Phys. 128 (2020) 045703
Postprint: PDF; Supplemental Material: PDF;
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3.
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Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond
/ Wahl, Ulrich (Universidade de Lisboa (PT)) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; Villarreal, Renan (KU Leuven) ; Bourgeois, Emilie (Hasselt University) ; Gulka, Michal (Hasselt University) ; Nesladek, Milos (Hasselt University) ; Vantomme, André (KU Leuven) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE))
/EC-SLI Collaboration ; IS368 Collaboration
We demonstrate formation of the ideal split-vacancy configuration of the Sn-vacancy center upon implantation into natural diamond. Using beta-emission channeling following low fluence 121Sn implantation (2E12 atoms/cm2, 60 keV) at the ISOLDE facility at CERN, we directly identified and quantified the atomic configurations of the Sn-related centers. [...]
CERN-ISOLDE-2021-002.-
2020 - 7 p.
- Published in : Phys. Rev. Lett. 125 (2020) 045301
Postprint: PDF; Supplemental material: PDF;
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4.
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In and Cd as defect traps in titanium dioxide
/ Schell, Juliana (CERN ; Duisburg-Essen U.) ; Lupascu, Doru C (Duisburg-Essen U.) ; Martins Correia, João Guilherme (CERN ; IST, Lisbon (main)) ; Carbonari, Artur Wilson (U. Sao Paulo (main)) ; Deicher, Manfred (Saarland U.) ; Barbosa, Marcelo Baptista (Porto U.) ; Mansano, Ronaldo Domingues (U. Sao Paulo (main)) ; Johnston, Karl (CERN) ; Ribeiro, Ibere S (U. Sao Paulo (main))
/ISOLDE
We present a study of TiO$_2$ single crystals from the point of view of the dopant atom that simultaneously behaves as the probing element. We used gamma-gamma time dependent perturbed angular correlations working with selected tracer elements ($^{111}$In/ $^{111}$Cd, $^{111m}$Cd/ $^{111}$Cd) together to investigate the different behavior of Cd and In dopants, particularly their interaction with point defects in the TiO$_2$ lattice. [...]
2016
- Published in : Hyperfine Interact. 238 (2016) 2
External link: Link to the fulltext on HFI2016 document server
In : International Conference on Hyperfine Interactions and their Applications, Leuven, Belgium, pp.2
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5.
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Hyperfine interactions in hydrogenated TiO2 thin films and powders for photocatalytic reactions
/ Zyabkin, Dmitry (Department of Materials for Electronics, Institute of Materials Science and Engineering, TU Ilmenau, Gustav-Kirchhoff-Strasse 5, 98693 Ilmenau, Germany) ; Schell, Juliana (EP Department, ISOLDE-CERN, CH-1211 Geneva 23, Switzerland, Institute for Materials Science and Centre for Nanointegration, Duisburg-Essen CENIDE), University of Duisburg-Essen, 45141 Essen, Germany) ; Lupascu, Doru C (Institute for Materials Science and Centre for Nanointegration, Duisburg-Essen CENIDE), University of Duisburg-Essen, 45141 Essen, Germany) ; Pall Gunnlaugson, Haraldur (Science Institute, University of Iceland, Dunhaga) ; Masenda, Hilary (School of Physics, University of the Witwatersrand, Johannesburg, 2050, South Africa) ; Mantovan, Roberto (Laboratorio MDM, IMM-CNR, Via Olivetti 2, 20864, Agrate Brianza (MB), Italy) ; Baruth Ram, Krish (Durban University of Technology, Durban, 4000, South Africa, School of Chemistry and Physics, University of KwaZulu-Natal, Durban, 4000, South Africa) ; Ólafsson, Sveinn (Science Institute University of Iceland) ; P Gíslason, Hafliði (Science Institute University of Iceland) ; Qi, Bing Cui (Science Institute University of Iceland) et al.
CERN-INTC-2018-004 ; INTC-P-535.
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2018.
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Lattice location of implanted transition metals in 3C–SiC
/ Granadeiro Costa, Angelo Rafael (Universidade de Lisboa (PT)) ; Wahl, Ulrich (Universidade de Lisboa (PT)) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; David Bosne, Eric (Universidade de Lisboa (PT)) ; Amorim, Lígia (KU Leuven (BE)) ; Silva, Daniel (Universidade do Porto (PT)) ; Castro Ribeiro Da Silva, Manuel (Universidade de Lisboa (PT)) ; Bharuth-Ram, Krishanlal (University of Kwazulu - Natal (ZA)) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE))
/EC-SLI Collaboration
We have investigated the lattice location of implanted transition metal (TM) 56Mn, 59Fe and 65Ni ions in undoped single-crystalline cubic 3C–SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (TC). [...]
CERN-OPEN-2017-022.-
Lisboa : Instituto Superior Técnico, 2017 - 11 p.
- Published in : J. Phys. D 50 (2017) 215101
Preprint: PDF;
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Influence of the doping on the lattice sites of Fe in Si
/ Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.)
/EC-SLI Collaboration
We report on the lattice location and thermal stability of Fe in n+- and p+-type silicon. By means of emission channeling we have observed Fe on ideal substitutional sites, sites located in between bond-centered (BC) and substitutional sites, and sites displaced from tetrahedral towards anti-bonding sites. [...]
CERN-OPEN-2017-008.-
Porto, Portugal : Porto U., 2014 - 4 p.
- Published in : AIP Conf. Proc. 1583 (2014) 24-27
Preprint: PDF;
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10.
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Direct observation of the lattice sites of implanted manganese in silicon
/ da Silva, Daniel José ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisboa U.) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.)
/IS453 Collaboration ; EC-SLI Collaboration
We have studied the influence of electronic doping on the preferred lattice sites of implanted 61Co, and the related stabilities against thermal annealing, in silicon. Using the beta- emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (near-BC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. [...]
CERN-OPEN-2017-007.-
Porto, Portugal : Porto U., 2016 - 7 p.
- Published in : Appl. Phys. A 122 (2016) 241
Preprint: PDF;
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