CERN Accelerating science

Home > Search Results: Koch, Henri D
Search Tips
Advanced Search
Add to Search +
Search collections:
Sort by: Display results: Output format:
CERN Document Server 4 records found  Search took 0.54 seconds. 
1.
Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors / Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Termo, Gennaro (CERN) ; Michelis, Stefano (CERN) ; Costanzo, Sebastiano (CERN) ; Koch, Henri D (CERN) ; Fleetwood, Daniel M (Vanderbilt U.)
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs, different temperatures, and different biases. [...]
2021 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 573-580
Detailed record - Similar records
2.
Extending a 65nm CMOS process design kit for high total ionizing dose effects / Nikolaou, Aristeidis (Natl. Tech. U., Athens) ; Bucher, Matthias (Natl. Tech. U., Athens) ; Makris, Nikos (Natl. Tech. U., Athens) ; Papadopoulou, Alexia (Natl. Tech. U., Athens) ; Chevas, Loukas (Natl. Tech. U., Athens) ; Borghello, Giulio (Udine U.) ; Koch, Henri D (U. Mons) ; Kloukinas, Kostas (CERN) ; Poikela, Tuomas S (CERN) ; Faccio, Federico (CERN)
Standard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. [...]
2018 - 4 p. - Published in : 10.1109/MOCAST.2018.8376561
In : 7th International Conference on Modern Circuits and Systems Technologies, Thessaloniki, Greece, 7 - 9 May 2018
Detailed record - Similar records
3.
Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS / Chevas, Loukas (Natl. Tech. U., Athens) ; Nikolaou, Aristeidis (Natl. Tech. U., Athens) ; Bucher, Matthias (Natl. Tech. U., Athens) ; Makris, Nikolaos (Natl. Tech. U., Athens) ; Papadopoulou, Alexia (Natl. Tech. U., Athens) ; Zografos, Apostolos (Natl. Tech. U., Athens) ; Borghello, Giulio (Udine U.) ; Koch, Henri D (U. Mons) ; Faccio, Federico (CERN)
Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). [...]
2018 - 6 p. - Published in : 10.23919/MIXDES.2018.8436809
In : 25th International Conference on Mixed Design of Integrated Circuits and System, Gdynia, Poland, 21 - 23 Jun 2018, pp.313-318
Detailed record - Similar records
4.
Effects of Ultra-High Total Ionizing Dose in Nanoscale Bulk CMOS Technologies / Koch, Henri Dariusz
Particle accelerators are an excellent instrument to investigate at the smallest scale in our universe [...]
CERN-THESIS-2018-184 - 95 p.

Fulltext
Detailed record - Similar records

See also: similar author names
689 Koch, H
7 Koch, H -C
1 Koch, H C
19 Koch, H R
1 Koch, H W
2 Koch, H-C
11 Koch, H.
1 Koch, H.-C
1 Koch, H.-C.
4 Koch, Hans
11 Koch, Helmut
1 Koch, Henri Dariusz
1 Koch, Henry J
13 Koch, Herbert
2 Koch, Hermann
1 Koch, Hermann J
Interested in being notified about new results for this query?
Set up a personal email alert or subscribe to the RSS feed.
Haven't found what you were looking for? Try your search on other servers:
Koch, Henri D in Amazon
Koch, Henri D in CERN EDMS
Koch, Henri D in CERN Intranet
Koch, Henri D in CiteSeer
Koch, Henri D in Google Books
Koch, Henri D in Google Scholar
Koch, Henri D in Google Web
Koch, Henri D in IEC		Koch, Henri D in IHS
Koch, Henri D in INSPIRE
Koch, Henri D in ISO
Koch, Henri D in KISS Books/Journals
Koch, Henri D in KISS Preprints
Koch, Henri D in NEBIS
Koch, Henri D in SLAC Library Catalog
Koch, Henri D in Scirus