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Influence of LDD Spacers and H$^+$ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses / Faccio, Federico (CERN) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Lerario, Edoardo (CERN ; U. Salento, Lecce (main)) ; Fleetwood, Daniel M (Vanderbilt U. (main)) ; Schrimpf, Ronald D (Vanderbilt U. (main)) ; Gong, Huiqi (Vanderbilt U. (main)) ; Zhang, En Xia (Vanderbilt U. (main)) ; Wang, P (Vanderbilt U. (main)) ; Michelis, Stefano (CERN) ; Gerardin, Simone (U. Padua (main)) et al.
The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent. The current drive decreases during irradiation, and the threshold voltage often shifts significantly during irradiation and/or high-temperature annealing, depending on transistor polarity, applied field, and irradiation/annealing temperature. [...]
2017 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 164-174
In : 54th Annual IEEE International Nuclear and Space Radiation Effects Conference, New Orleans, LA, USA, 17 - 21 Jul 2017, pp.164-174

Detailed record - Similar records

See also: similar author names
109	Gong, H
1	Gong, H W
1	Gong, H Y
11	Gong, H.
1	Gong, Haifeng
1	Gong, Haijiang
2	Gong, Hang
5	Gong, Hao
5	Gong, Haowei
1	Gong, Huajun
8	Gong, Hui
2	Gong, Huili

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