Decoster, Stefan - Search Results - CERN Document Server

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Direct observation of the lattice sites of implanted manganese in silicon / da Silva, Daniel José ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisboa U.) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.) /IS453 Collaboration ; EC-SLI Collaboration
We have studied the influence of electronic doping on the preferred lattice sites of implanted 61Co, and the related stabilities against thermal annealing, in silicon. Using the beta- emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (near-BC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. [...]
CERN-OPEN-2017-007.- Porto, Portugal : Porto U., 2016 - 7 p. - Published in : Appl. Phys. A 122 (2016) 241 Preprint: PDF;

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Emission channeling studies on transition-metal doped GaN and ZnO: Cation versus anion substitution / Da Costa Pereira, Lino Miguel (Leuven U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Silva, Daniel (Porto U.) ; Decoster, Stefan (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.) /EC-SLI Collaboration
The magnetic and electric properties of impurities in semiconductors are strongly dependent on the lattice sites which they occupy. While the majority site can often be predicted based on chemical similarities with the host elements and is usually simple to confirm experimentally, minority sites are far more complicated to predict, detect and identify. [...]
CERN-OPEN-2017-003.- Leuven, Belgium : Leuven U., 2014 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., B 332 (2014) 143-147 Fulltext: PDF;

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Lattice sites of Na dopants in ZnO / Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Ribeiro da Silva, Manuel (Instituto Superior Técnico (PT)) ; Da Costa Pereira, Lino Miguel (Leuven U.) /EC-SLI Collaboration
The angular distribution of beta− particles emitted by the radioactive isotope 24Na was monitored following implantation into ZnO single crystals at fluences above 5E12 cm−2 at CERN’s ISOLDE facility. We identified sodium on two distinct sites: on substitutional Zn sites and on interstitial sites that are close to the so-called octahedral site. [...]
CERN-OPEN-2017-001.- Lisbon : Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, 2016 - 9 p. - Published in : Semicond. Sci. Technol. 31 (2016) 095005 Preprint: PDF;

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Precise lattice location of substitutional and interstitial Mg in AlN / Amorim, Lígia Marina (Leuven U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Pereira, Lino Miguel da Costa (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Silva, Daniel José (Porto U.) ; Silva, Manuel Ribeiro da (Lisbon U., CFAUL) ; Gottberg, Alexander (CERN) ; Correia, João Guilherme (IST/ITN, Lisbon) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.)
The lattice site location of radioactive $^{27}$Mg implanted in AlN was determined by means of emission channeling. The majority of the $^{27}$Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. [...]
CERN-OPEN-2014-013.- Leuven : KU Leuven, 2013 - 5 p. - Published in : Appl. Phys. Lett. 103 (2013) 262102 Preprint: PDF;

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Minority anion substitution by Ni in ZnO / Pereira, Lino Miguel da Costa (Leuven U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Correia, João Guilherme (IST/ITN, Lisbon) ; Amorim, Lígia Marina (Leuven U.) ; Silva, Daniel José (Porto U.) ; David-Bosne, Eric (IST/ITN, Lisbon ; Aveiro U.) ; Decoster, Stefan (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.) /EC-SLI Collaboration
We report on the lattice location of implanted Ni in ZnO using the $\beta$− emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. [...]
CERN-OPEN-2014-011.- Leuven : Instituut voor Kern- en Stralingsfysica, KU Leuven, 2013 - 4 p. - Published in : Appl. Phys. Lett. 103 (2013) 091905 Preprint: PDF;

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Mixed Zn and O substitution of Co and Mn in ZnO / Pereira, Lino Miguel da Costa (Leuven U. ; ITN, Sacavem ; Porto U.) ; Wahl, Ulrich (ITN, Sacavem ; Lisbon U., CFNUL) ; Decoster, Stefan (Leuven U.) ; Correia, João Guilherme (ITN, Sacavem ; Lisbon U., CFNUL) ; Amorim, Lígia Marina (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; Araújo, João Pedro (Porto U.) ; Vantomme, André (Leuven U.) /EC-SLI Collaboration
The physical properties of an impurity atom in a semiconductor are primarily determined by the lattice site it occupies. In general, this occupancy can be correctly predicted based on chemical intuition, but not always. [...]
CERN-OPEN-2014-004.- Leuven, Belgium : KU Leuven, 2011 - 6 p. - Published in : Phys. Rev. B 84 (2011) 125204 Preprint: PDF;

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Lattice location of the group V elements Sb, As, and P in ZnO / Wahl, Ulrich (ITN, Sacavem ; Lisbon U., CFNUL) ; Correia, João Guilherme (ITN, Sacavem ; Lisbon U., CFNUL ; CERN) ; Mendonça, Tânia (Porto U.) ; Decoster, Stefan (Leuven U.) /EC-SLI Collaboration
Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes $^{124}$Sb, $^{73}$As and $^{33}$P and it is found that they preferentially occupy substitutional Zn sites while the possible fractions on substitutional O sites are a few percent at maximum. [...]
CERN-OPEN-2014-002.- Sacavém : ITN, 2010 - 15 p. - Published in : Proc. SPIE 7603 (2010) 76030K/1-15 Preprint: PDF;
In : Conference on Oxide-based Materials and Devices, San Francisco, CA, USA, 24 – 27 Jan 2010, pp.76030K/1-15

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Ion Implantation in Ge: Structural and electrical investigation of the induced lattice damage & Study of the lattice location of implanted impurities / Decoster, Stefan
The past two decades, germanium has drawn international attention as one of the most promising materials to replace silicon in semiconductor applications [...]
CERN-THESIS-2009-235 - 261 p.

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