Bonaldo, Stefano - Search Results - CERN Document Server

Search collections:

Sort by:	Display results:	Output format:

CERN Document Server	5 records found	Search took 1.19 seconds.

Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs / Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436 Fulltext: PDF;

Detailed record - Similar records

Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses / Bonaldo, Stefano (U. Padua (main)) ; Gerardin, Simone (U. Padua (main)) ; Jin, Xiaoming (Northwest Inst. Nucl. Tech., Xian) ; Paccagnella, Alessandro (U. Padua (main)) ; Faccio, Federico (CERN) ; Borghello, Giulio (CERN) ; Fleetwood, Daniel M (Vanderbilt U. (main))
In this paper, a commercial 65-nm CMOS technology is irradiated at ultrahigh ionizing doses and then annealed at high temperature under different bias conditions. The experimental results demonstrate the high sensitivity of pMOSFETs to radiation-induced short-channel effects, related to the buildup of defects in spacer dielectrics. [...]
2019 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1574-1583
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1574-1583

Detailed record - Similar records

Influence of LDD Spacers and H$^+$ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses / Faccio, Federico (CERN) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Lerario, Edoardo (CERN ; U. Salento, Lecce (main)) ; Fleetwood, Daniel M (Vanderbilt U. (main)) ; Schrimpf, Ronald D (Vanderbilt U. (main)) ; Gong, Huiqi (Vanderbilt U. (main)) ; Zhang, En Xia (Vanderbilt U. (main)) ; Wang, P (Vanderbilt U. (main)) ; Michelis, Stefano (CERN) ; Gerardin, Simone (U. Padua (main)) et al.
The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent. The current drive decreases during irradiation, and the threshold voltage often shifts significantly during irradiation and/or high-temperature annealing, depending on transistor polarity, applied field, and irradiation/annealing temperature. [...]
2017 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 164-174
In : 54th Annual IEEE International Nuclear and Space Radiation Effects Conference, New Orleans, LA, USA, 17 - 21 Jul 2017, pp.164-174

Detailed record - Similar records

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses / Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Lerario, Edoardo (CERN ; U. Salento, Lecce (main)) ; Michelis, Stefano (CERN) ; Kulis, Szymon (CERN) ; Fleetwood, Daniel M (Vanderbilt U. (main)) ; Schrimpf, Ronald D (Vanderbilt U. (main)) ; Gerardin, Simone (U. Padua (main)) ; Paccagnella, Alessandro (U. Padua (main)) ; Bonaldo, Stefano (U. Padua (main))
The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-nm FETs demonstrated that performance degradation in ultrahigh total ionizing dose (TID) experiments is due to defects in the isolation shallow trench isolation oxide or in the materials composing the lightly doped drain spacers. [...]
2018 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 1482-1487

Detailed record - Similar records

Development of a large pixel chip demonstrator in RD53 for ATLAS and CMS upgrades / Conti, Elia (CERN) ; Barbero, Marlon (Marseille, CPPM) ; Fougeron, Denis (Marseille, CPPM) ; Godiot, Stephanie (Marseille, CPPM) ; Menouni, Mohsine (Marseille, CPPM) ; Pangaud, Patrick (Marseille, CPPM) ; Rozanov, Alexandre (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) et al. /RD53
RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and very high radiation levels (500 Mrad, possibly 1 Grad) for ATLAS and CMS phase 2 upgrades. It features serial powering operation and design variations in the analog and digital pixel matrix for different testing purposes. [...]
SISSA, 2017 - 5 p. - Published in : PoS TWEPP-17 (2017) 005 Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.005

Detailed record - Similar records

See also: similar author names
5	Bonaldo, S

Interested in being notified about new results for this query?
Set up a personal email alert or subscribe to the RSS feed.

Haven't found what you were looking for? Try your search on other servers:
Bonaldo, Stefano in Amazon Bonaldo, Stefano in CERN EDMS Bonaldo, Stefano in CERN Intranet Bonaldo, Stefano in CiteSeer Bonaldo, Stefano in Google Books Bonaldo, Stefano in Google Scholar Bonaldo, Stefano in Google Web Bonaldo, Stefano in IEC	Bonaldo, Stefano in IHS Bonaldo, Stefano in INSPIRE Bonaldo, Stefano in ISO Bonaldo, Stefano in KISS Books/Journals Bonaldo, Stefano in KISS Preprints Bonaldo, Stefano in NEBIS Bonaldo, Stefano in SLAC Library Catalog Bonaldo, Stefano in Scirus

CERN Document Server

Access articles, reports and multimedia content in HEP

Main menu

CERN Accelerating science