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CERN Document Server 7 εγγραφές βρέθηκαν  Η έρευνα πήρε 1.22 δευτερόλεπτα. 
1.
First results on monolithic CMOS detector with internal gain / Follo, U. (INFN, Turin ; Turin Polytechnic) ; Gioachin, G. (INFN, Turin ; Polytech. Turin) ; Ferrero, C. (INFN, Turin ; Turin Polytechnic) ; Mandurrino, M. (INFN, Turin) ; Bregant, M. (Sao Paulo U.) ; Bufalino, S. (INFN, Turin ; Polytech. Turin) ; Carnesecchi, F. (CERN) ; Cavazza, D. (INFN, Bologna) ; Colocci, M. (INFN, Bologna ; Bologna U.) ; Corradino, T. (Trento U. ; INFN, Trento) et al.
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $\mu$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $\mu$m $\times$ 250 $\mu$m and includes a high-speed front-end amplifier. [...]
arXiv:2406.19906.- 2024-07-29 - 18 p. - Published in : JINST 19 (2024) P07033 Fulltext: 2406.19906 - PDF; Publication - PDF;
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2.
A new Low Gain Avalanche Diode concept: the double-LGAD / Carnesecchi, F. (CERN) ; Strazzi, S. (INFN, Bologna ; U. Bologna, DIFA) ; Alici, A. (INFN, Bologna ; U. Bologna, DIFA) ; Arcidiacono, R. (INFN, Turin ; Piemonte Orientale U., Alessandria) ; Cartiglia, N. (INFN, Turin) ; Cavazza, D. (INFN, Bologna) ; Durando, S. (INFN, Turin ; Turin Polytechnic) ; Ferrero, M. (INFN, Turin) ; Margotti, A. (INFN, Bologna) ; Menzio, L. (INFN, Turin ; Turin U.) et al.
This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. [...]
arXiv:2307.14320.- 2023-11-07 - 10 p. - Published in : Eur. Phys. J. Plus 138 (2023) 990 Fulltext: 2307.14320 - PDF; document - PDF;
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3.
Measurements of the Cherenkov effect in direct detection of charged particles with SiPMs / Carnesecchi, F. (CERN) ; Sabiu, B. (Bologna U. ; INFN, Bologna) ; Strazzi, S. (Bologna U. ; INFN, Bologna) ; Vignola, G. (INFN, Bologna) ; Agrawal, N. (Bologna U. ; INFN, Bologna) ; Alici, A. (Bologna U. ; INFN, Bologna) ; Antonioli, P. (INFN, Bologna) ; Arcelli, S. (Bologna U. ; INFN, Bologna) ; Bellini, F. (Bologna U. ; INFN, Bologna) ; Cavazza, D. (INFN, Bologna) et al.
In this paper, different Silicon PhotoMultiplier (SiPM) sensors have been tested with charged particles to characterize the Cherenkov light produced in the sensor protection layer. A careful position scan of the SiPM response has been performed with different prototypes, confirming the large number of firing cells and proving almost full efficiency, with the SiPM filling factor essentially negligible. [...]
arXiv:2305.17762.- 2023-09-05 - Published in : Eur. Phys. J. Plus 138 (2023) 788 Fulltext: 2305.17762 - PDF; document - PDF;
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4.
Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors / Carnesecchi, F. (CERN) ; Strazzi, S. (U. Bologna, DIFA) ; Alici, A. (U. Bologna, DIFA) ; Arcidiacono, R. (INFN, Turin ; Piemonte Orientale U., Alessandria) ; Borghi, G. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Boscardin, M. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Cartiglia, N. (INFN, Turin) ; Centis Vignali, M. (Fond. Bruno Kessler, Trento ; TIFPA-INFN, Trento) ; Cavazza, D. (INFN, Bologna) ; Dalla Betta, G. -F. (U. Trento (main) ; TIFPA-INFN, Trento) et al.
This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $\mu$m and 35 $\mu$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$\mu$m thick sensor, taken as reference. [...]
arXiv:2208.05717.- 2023-01-30 - 11 p. - Published in : Eur. Phys. J. Plus 138 (2023) 99 Fulltext: 2208.05717 - PDF; document - PDF;
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5.
Understanding the direct detection of charged particles with SiPMs / Carnesecchi, F. (CERN) ; Vignola, G. (DESY) ; Agrawal, N. (INFN, Bologna) ; Alici, A. (Bologna U.) ; Antonioli, P. (INFN, Bologna) ; Arcelli, S. (Bologna U.) ; Bellini, F. (Bologna U.) ; Cavazza, D. (INFN, Bologna) ; Cifarelli, L. (Bologna U.) ; Colocci, M. (Bologna U.) et al.
In this paper evidence that the increased response of SiPM sensors to the passage of charged particles is related mainly to Cherenkov light produced in the protection layer is reported. The response and timing properties of sensors with different protection layers have been studied..
arXiv:2210.13244.- 2023-04-18 - 8 p. - Published in : Eur. Phys. J. Plus 138 (2023) 337 Fulltext: 2210.13244 - PDF; document - PDF;
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6.
Direct detection of charged particles with SiPMs / Carnesecchi, F. (CERN) ; Vignola, G. (Bologna U.) ; Agrawal, N. (Bologna U.) ; Alici, A. (Bologna U.) ; Antonioli, P. (INFN, Bologna) ; Arcelli, S. (Bologna U.) ; Bellini, F. (Bologna U.) ; Cavazza, D. (INFN, Bologna) ; Cifarelli, L. (Bologna U.) ; Colocci, M. (Bologna U.) et al.
The direct response of Silicon PhotoMultipliers being traversed by a MIP charged particle have been studied in a systematic way for the first time. Using beam test data, time resolution and the crosstalk probability have been measured. [...]
arXiv:2202.04160.- 2022-06-06 - 11 p. - Published in : JINST 17 (2022) P06007 Fulltext: document - PDF; 2202.04160 - PDF;
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7.
Beam test results of a 16 ps timing system based on ultra-fast silicon detectors / Cartiglia, N. (INFN, Turin) ; Staiano, A. (INFN, Turin) ; Sola, V. (INFN, Turin) ; Arcidiacono, R. (Turin U., Alessandria ; INFN, Turin) ; Cirio, R. (Turin U. ; INFN, Turin) ; Cenna, F. (Turin U. ; INFN, Turin) ; Ferrero, M. (Turin U. ; INFN, Turin) ; Monaco, V. (Turin U. ; INFN, Turin) ; Mulargia, R. (Turin U. ; INFN, Turin) ; Obertino, M. (Turin U. ; INFN, Turin) et al.
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. [...]
arXiv:1608.08681.- 2017-04-01 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 850 (2017) 83-88 Fulltext: 10.1016_j.nima.2017.01.021 - PDF; arXiv:1608.08681_2 - PDF; Preprint: PDF; External link: Preprint
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