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1.
Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer / Paolozzi, L. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U.) ; Elviretti, M. (CERN) ; Rücker, H. (CERN) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) et al.
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 μ m pitch, read by low-noise, high-speed front-end electronics built using 130 nm SiGe BiCMOS technology. [...]
arXiv:2412.07606.- 2025 - 18 p. - Published in : JINST 20 (2025) P04001 Fulltext: 2412.07606 - PDF; document - PDF;
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2.
Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer / Moretti, T. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) ; Nakamura, K. (KEK, Tsukuba) ; Takubo, Y. (KEK, Tsukuba) et al.
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μ m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. [...]
arXiv:2404.12885.- 2024-07-29 - 15 p. - Published in : JINST 19 (2024) P07036 Fulltext: Publication - PDF; 2404.12885 - PDF;
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3.
Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser / Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Latshaw, A. (Geneva U.) ; Bonacina, L. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) et al.
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2401.01229.- 2024-04-24 - 11 p. - Published in : JINST 19 (2024) P04029 Fulltext: 2401.01229 - PDF; Publication - PDF;
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4.
Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer / Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Zambito, S. (Geneva U.) ; Nakamura, K. (KEK, Tsukuba) et al.
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2310.19398.- 2024-01-15 - 13 p. - Published in : JINST 19 (2024) P01014 Fulltext: publication - PDF; 2310.19398 - PDF;
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5.
20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer / Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (Leibniz U., Hannover) et al.
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2301.12244.- 2023-03-28 - 16 p. - Published in : JINST Fulltext: 2301.12244 - PDF; Publication - PDF;
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