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Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants / Smith, A J ; Cowern, N E B ; Colombeau, B ; Gwilliam, R ; Sealy, B J ; Collart, E J H ; Gennaro, S ; Giubertoni, D ; Bersani, M ; Barozzi, M
2006 - Published in : AIP Conf. Proc.: 866 (2006) , pp. 84-87 External link: Published version from AIP
In : 16th International Conference on Ion Implantation Technology, Marseilles, France, 11 - 16 Jun 2006, pp.84-87

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator / Hamilton, J J ; Collart, E J H ; Bersani, M ; Giubertoni, D ; Gennaro, S ; Bennett, N S ; Cowern, N E B ; Kirkby, K J
2006 - Published in : AIP Conf. Proc.: 866 (2006) , pp. 73-75 External link: Published version from AIP
In : 16th International Conference on Ion Implantation Technology, Marseilles, France, 11 - 16 Jun 2006, pp.73-75

Strain-Enhanced Activation of Sb Ultrashallow Junctions / Bennett, N S ; O'Reilly, L ; Smith, A J ; Gwilliam, R M ; McNally, P J ; Cowern, N E B ; Sealy, B J
2006 - Published in : AIP Conf. Proc.: 866 (2006) , pp. 54-57 External link: Published version from AIP
In : 16th International Conference on Ion Implantation Technology, Marseilles, France, 11 - 16 Jun 2006, pp.54-57

Co-Implantation for 45 nm PMOS and NMOS Source-Drain Extension Formation : Device Characterisation Down to 30 nm Physical Gate Length / Collart, E J H ; Pawlak, B J ; Duffy, R ; Augendre, E ; Severi, S ; Janssens, T ; Absil, P ; Vandervorst, W ; Felch, S ; Scheutelkamp, R et al.
2006 - Published in : AIP Conf. Proc.: 866 (2006) , pp. 37-40 External link: Published version from AIP
In : 16th International Conference on Ion Implantation Technology, Marseilles, France, 11 - 16 Jun 2006, pp.37-40

Deactivation of low energy Boron Implants into Pre-amorphised Si after Non-Melt Laser Annealing with Multiple Scans / Sharp, J A ; Cowern, N E B ; Webb, R P ; Giubertoni, D ; Gennaro, S ; Bersani, M ; Foad, M ; Kirkby, K J
2006 - Published in : AIP Conf. Proc.: 866 (2006) , pp. 33-36 External link: Published version from AIP
In : 16th International Conference on Ion Implantation Technology, Marseilles, France, 11 - 16 Jun 2006, pp.33-36

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1	Cowern, Nick E B

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