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CERN Document Server Намерени са 19 записа  1 - 10следващ  отиване на запис: Търсенето отне 0.52 секунди. 
1.
RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders / Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003. - 2010. - 73 p.
Fulltext
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2.
Energy loss and damage production by heavy ions and strange quark matter in silicon / Lazanu, Sorina (Bucharest, Nat. Inst. Mat. Sci.) ; Lazanu, Ionel (Bucharest U.)
In this contribution, the peculiarities of the behaviour of strange quark matter in respect to ordinary ions in silicon are investigated, and a tentative to identify possible observable effects of degradation is made..
arXiv:0710.5266.- 2008 - 5 p. - Published in : 10.1142/9789812819093_0082 Fulltext: PDF; External link: Fulltext
In : 10th ICATPP Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, Villa Olmo, Como, Italy, 8 - 12 Oct 2007, pp.471-475
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3.
RD50 Status Report 2006 : Radiation hard semiconductor devices for very high Luminosity colliders / RD50 Collaboration
CERN-LHCC-2007-005 ; LHCC-RD-013. - 2007. - 76 p.
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4.
Modelling spatial distribution of defects and estimation of electrical degradation of silicon detectors in radiation fields at high luminosity / Lazanu, Sorina (Bucharest, Nat. Inst. Mat. Sci.) ; Lazanu, Ionel (Bucharest U.)
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from available data on the degradation of silicon detector characteristics in radiation fields, these effects are explained in the frame of a model that supposes also the production of the SiFFCD defect due to irradiation. [...]
physics/0611194.- 2006 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 583 (2007) 165-168 Access to fulltext document: PDF; Fulltext: PDF; External link: physics/0611194 PDF
In : 6th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, 10 - 13 Oct 2006, pp.165-168
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5.
An Analysis of the Expected Degradation of Silicon Detectors in the Future Ultra High Energy Facilities / Lazanu, Ionel (Bucharest U.) ; Lazanu, Sorina (Bucharest, Nat. Inst. Mat. Sci.) /RD50 Collaboration
In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces effects at the device level that limit their long time utilisation, increasing the leakage current and the depletion potential, eventually up to breakdown, and thus affecting the lifetime of detector systems. Physical phenomena that conduce to the degradation of the detector are analysed both at the material and device levels, and some predictions of the time degradation of silicon detectors in the radiation environments expected in the LHC machine upgrade in luminosity and energy as SLHC or VLHC, or at ULHC are given. [...]
physics/0611079.- 2006 - 5 p. - Published in : (2006) , pp. 827-831 Access to fulltext document: PDF; Fulltext: PDF; External link: ICATPP9 Conference Server
In : 9th ICATPP Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, Como, Italy, 17 - 21 Oct 2005, pp.827-831
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6.
Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments / Lazanu, Sorina (Bucharest, Inst. Phys. Tech. Mater.) ; Lazanu, Ionel (Bucharest U.) /CERN-RD50 Collaboration
The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is investigated in the frame of the quantitative phenomenological model developed previously by the authors and extended in the present paper. Continuous irradiation conditions are considered, simulating realistically the environments for these experiments. [...]
hep-ph/0310101.- 2004 - 15 p. - Published in : Phys. Scr. 69 (2004) 376-384 Access to fulltext document: PDF;
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7.
Scenarios about the long-time damage of silicon as material and detectors operating beyond LHC collider conditions / Lazanu, Ionel (Bucharest U.) ; Lazanu, Sorina (Bucharest, Nat. Inst. Mat. Sci.)
For the new hadron collider LHC and some of its updates in luminosity and energy, as SLHC and VLHC, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation in the bulk of the silicon as material and for silicon detectors, in continuous radiation field, in these hostile conditions. [...]
hep-ph/0402233.- Geneva : CERN, 2005 - Published in : Phys. Scr. 71 (2005) 31-38 Access to fulltext document: PDF; External link: hep-ph/0402233 PDF
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8.
The modelling of long-term damage after irradiation in silicon for uses at the LHC accelerator and in space mission, and its influence on detector performances / Lazanu, Ionel ; Lazanu, Sorina
UBPUB-EPPG-PHYS-53. - 2003. - 50 p.
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9.
Si, GaAs and diamond damage in pion fields with application to LHC / Lazanu, Sorina ; Lazanu, Ionel
1998
In : 8th Vienna Wire Chamber Conference, Vienna, Austria, 23 - 27 Feb 1998, pp.570-6
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10.
Hall effect measurements on proton-irradiated ROSE samples / Biggeri, U ; Borchi, E ; Bruzzi, Mara (INFN and Universita', Firenze, Italy) ; Pirollo, S ; Sciortino, S ; Lazanu, Sorina ; Li, Z /ROSE Collaboration
1997 - Published in : Nucl. Instrum. Methods Phys. Res., A 400 (1997) 113-123
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