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Study of scintillation light collection, production and propagation in a 4 tonne dual-phase LArTPC
/ Aimard, B. (Annecy, LAPP) ; Aizawa, L. (Iwate U.) ; Alt, C. (Zurich, ETH) ; Asaadi, J. (Texas U., Arlington) ; Auger, M. (U. Bern, AEC) ; Aushev, V. (Taras Shevchenko U.) ; Autiero, D. (IP2I, Lyon) ; Balaceanu, A. (Bucharest, IFIN-HH) ; Balik, G. (Annecy, LAPP) ; Balleyguier, L. (IP2I, Lyon) et al.
The $3 \times 1 \times 1$ m$^3$ demonstrator is a dual phase liquid argon time projection chamber that has recorded cosmic rays events in 2017 at CERN. The light signal in these detectors is crucial to provide precise timing capabilities. [...]
arXiv:2010.08370; FERMILAB-PUB-20-572-ND.-
2021-03-03 - 31 p.
- Published in : JINST 16 (2021) P03007
Fulltext: 2010.08370 - PDF; fermilab-pub-20-572-nd - PDF; Fulltext from Publisher: PDF; Fulltext from publisher: PDF; External link: Fermilab Library Server (fulltext available)
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A 4 tonne demonstrator for large-scale dual-phase liquid argon time projection chambers
/ Aimard, B. (Annecy, LAPP) ; Alt, Ch. (Zurich, ETH) ; Asaadi, J. (Texas U., Arlington) ; Auger, M. (U. Bern, AEC) ; Aushev, V. (Taras Shevchenko U.) ; Autiero, D. (Lyon, IPN) ; Badoi, M.M. (Bucharest, IFIN-HH) ; Balaceanu, A. (Bucharest, IFIN-HH) ; Balik, G. (Annecy, LAPP) ; Balleyguier, L. (Lyon, IPN) et al.
A 10 kilo-tonne dual-phase liquid argon TPC is one of the detector options considered for the Deep Underground Neutrino Experiment (DUNE). The detector technology relies on amplification of the ionisation charge in ultra-pure argon vapour and oers several advantages compared to the traditional single-phase liquid argon TPCs. [...]
arXiv:1806.03317; FERMILAB-PUB-18-257-ND.-
2018-11-06 - 61 p.
- Published in : JINST 13 (2018) P11003
Fulltext: fermilab-pub-18-257-nd - PDF; fulltext1677274 - PDF; 1806.03317 - PDF; Fulltext from Publisher: PDF; External link: Fermilab Accepted Manuscript
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Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process
/ Hiti, B. (Stefan Inst., Ljubljana) ; Cindro, V. (Stefan Inst., Ljubljana) ; Gorišek, A. (Stefan Inst., Ljubljana) ; Hemperek, T. (Bonn U.) ; Kishishita, T. (Bonn U.) ; Kramberger, G. (Stefan Inst., Ljubljana) ; Krüger, H. (Bonn U.) ; Mandić, I. (Stefan Inst., Ljubljana ; Bonn U.) ; Mikuž, M. (Stefan Inst., Ljubljana ; Ljubljana U.) ; Wermes, N. (Bonn U.) et al.
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. [...]
arXiv:1701.06324.-
2017-10-25 - 14 p.
- Published in : JINST 12 (2017) P10020
Preprint: PDF;
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Design of analog front-ends for the RD53 demonstrator chip
/ Gaioni, L (Bergamo U. ; INFN, Pavia) ; De Canio, F (Bergamo U. ; INFN, Pavia) ; Nodari, B (Bergamo U. ; INFN, Pavia) ; Manghisoni, M (Bergamo U. ; INFN, Pavia) ; Re, V (Bergamo U. ; INFN, Pavia) ; Traversi, G (Bergamo U. ; INFN, Pavia) ; Barbero, M B (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Gensolen, F (Marseille, CPPM) ; Godiot, S (Marseille, CPPM) et al.
The RD53 collaboration is developing a large scale pixel front-end chip, which will be a tool to evaluate the performance of 65 nm CMOS technology in view of its application to the readout of the innermost detector layers of ATLAS and CMS at the HL-LHC. Experimental results of the characterization of small prototypes will be discussed in the frame of the design work that is currently leading to the development of the large scale demonstrator chip RD53A to be submitted in early 2017. [...]
SISSA, 2017 - 14 p.
- Published in : PoS Vertex 2016 (2017) 036
Fulltext: PDF; External link: PoS server
In : VERTEX 2016, La Biodola, Italy, 25 - 30 Sep 2016, pp.036
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6.
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Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC
/ Demaria, N (INFN, Turin) ; Barbero, M B (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Gensolen, F (Marseille, CPPM) ; Godiot, S (Marseille, CPPM) ; Menouni, M (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM) ; Rozanov, A (Marseille, CPPM) ; Wang, A (Marseille, CPPM) ; Bomben, M (Paris U., VI-VII) et al.
/RD53
This paper is a review of recent progress of RD53 Collaboration. Results obtained on the study of the radiation effects on 65 nm CMOS have matured enough to define first strategies to adopt in the design of analog and digital circuits. [...]
FERMILAB-CONF-16-622-PPD.-
2016
- Published in : JINST 11 (2016) C12058
IOP Open Access article: PDF;
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016), Sestri Levante, Italy, 5 - 9 Sep 2016, pp.C12058
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Charge collection properties of a depleted monolithic active pixel sensor using a HV-SOI process
/ Fernandez-Perez, S (CERN ; Barcelona, IFAE) ; Backhaus, M (CERN) ; Fernandez-Garcia, M (Cantabria U., Santander) ; Gallrapp, C (CERN) ; Hemperek, T (U. Bonn (main)) ; Kishishita, T (U. Bonn (main)) ; Krueger, H (U. Bonn (main)) ; Moll, M (CERN) ; Padilla, C (Barcelona, IFAE) ; Pernegger, H (CERN)
New pixel detector concepts, based on commercial high voltage and/or high resistivity CMOS processes, are being investigated as a possible candidate to the inner and outer layers of the ATLAS Inner Tracker in the HL-LHC upgrade. A depleted monolithic active pixel sensor on thick film SOI technology is being extensively investigated for that purpose. [...]
2016
- Published in : JINST 11 (2016) C01063
IOP Open Access article: PDF;
In : 17th International Workshop on Radiation Imaging Detectors, Hamburg, Germany, 28 Jun - 02 Jul 2015, pp.C01063
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8.
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Radiation hardness of a 180 nm SOI monolithic active pixel sensor
/ Fernandez-Perez, S (CERN ; Barcelona, IFAE) ; Backhaus, M (CERN) ; Pernegger, H (CERN) ; Hemperek, T (Bonn U.) ; Kishishita, T (Bonn U.) ; Krüger, H (Bonn U.) ; Wermes, N (Bonn U.)
The use of Silicon-on-Insulator (SOI) technology as a particle detector in a high radiation environment is, at present, limited mostly by radiation effects on the transistor characteristics, back gate effect, and mutual coupling between the Buried Oxide (BOX) and the sensor. We have fabricated and tested a new 0.18μm SOI CMOS monolithic pixel sensor using the XFAB process. [...]
2015 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 796 (2015) 13-18
Elsevier Open Access article: PDF;
In : 10th International Conference on Radiation Effects on Semiconductor Materials, Detectors, and Devices, Florence, Italy, 8 - 10 Oct 2014, pp.13-18
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DEPFET active pixel detectors for a future linear $e^+e^-$ collider
/ DEPFET Collaboration
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\mathrm{\mathbf{\mu m}}$. [...]
arXiv:1212.2160; AIDA-PUB-2010-005.-
Geneva : CERN, 2013 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 60 (2013) 1457-1465
Fulltext: PDF; Preprint: PDF; External link: Preprint
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