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Fiber laser system of 1550 nm femtosecond pulses with configurable properties for the two-photon excitation of transient currents in semiconductor detectors
/ Almagro-Ruiz, Azahara (Guglielmo Marconi U.) ; Pape, Sebastian (CERN ; Dortmund U.) ; Muñoz-Marco, Héctor (Guglielmo Marconi U.) ; Wiehe, Moritz (CERN ; Freiburg U.) ; Currás, Esteban (CERN) ; Fernández-García, Marcos (CERN ; Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Montero, Raúl (Basque U., Bilbao) ; Palomo, Francisco Rogelio (Seville U.) ; Quintana, Cristian (Cantabria Inst. of Phys.) et al.
A fiber laser system emitting ultrashort femtosecond pulses at 1550 nm with configurable properties has been developed as an excitation source for the two-photon absorption transient current technique (TPA-TCT). The modules of the system are designed to provide the optical specifications required at the output for localized characterization of semiconductor radiation detectors: variation of pulse energy between 10 nJ and 10p
J, variation of the pulse repetition rate from 8.2 MHz to single shot, and variation of pulse duration between 300 and 600 fs. [...]
2022 - 12 p.
- Published in : Appl. Opt. 61 (2022) 9386-9397
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Test beam characterization of irradiated 3D pixel sensors
/ Garcia Alonso, Andrea (Cantabria Inst. of Phys.) ; Curras Rivera, Esteban (Cantabria Inst. of Phys.) ; Duarte Campderros, Jordi (Cantabria Inst. of Phys.) ; Fernandez Garcia, Marcos (Cantabria Inst. of Phys.) ; Gomez, Gervasio (Cantabria Inst. of Phys.) ; Gonzalez Sanchez, Javier (Cantabria Inst. of Phys.) ; Silva Jimenez, Esther (Strasbourg, IPHC) ; Vila Alvarez, Ivan (Cantabria Inst. of Phys.) ; Jaramillo Echeverria, Richard William (Cantabria Inst. of Phys.) ; Meschini, Marco (INFN, Florence) et al.
Due to the large expected instantaneous luminosity, the future HL-LHC upgrade sets strong requirements on the radiation hardness of the CMS detector Inner Tracker. Sensors based on 3D pixel technology, with its superior radiation tolerance, comply with these extreme conditions. [...]
CMS-CR-2019-161.-
Geneva : CERN, 2019 - 12 p.
Fulltext: PDF;
In : 21st International Workshop on Radiation Imaging Detectors, Kolympari, Chania, Greece, 7 - 12 Jul 2019
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Development of a Tabletop Setup for the Transient Current Technique Using Two-Photon Absorption in Silicon Particle Detectors
/ Wiehe, Moritz (CERN ; Freiburg U.) ; Fernandez Garcia, Marcos (CERN) ; Moll, Michael (CERN) ; Montero, Raul (SGIker Laser Facility (UPV/EHU), Leioa) ; Palomo, F R (Escuela Técnica Superior de Ingenieros, Seville) ; Vila, Ivan (Cantabria Inst. of Phys.) ; Munoz-Marco, Hector (FYLA LASER, Valencia) ; Otgon, Viorel (FYLA LASER, Valencia) ; Perez-Millan, Pere (FYLA LASER, Valencia)
The transient current technique (TCT) is widely used in the field of silicon particle detector development. So far, only laser wavelengths with a photon energy larger than or similar to the silicon bandgap (single photon absorption) were used. [...]
2021 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 68 (2021) 220-228
Fulltext: PDF;
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Multiplication onset and electric field properties of proton irradiated LGADs
/ Ugobono, Sofia Otero (U. Santiago de Compostela (main) ; CERN) ; Centis Vignali, Matteo (CERN) ; Fernandez Garcia, Marcos (CERN ; Cantabria U., Santander) ; Gallrapp, Christian ; Hidalgo Villena, Salvador ; Mateu, Isidre ; Moll, Michael ; Pellegrini, Giulio ; Barroso, Ana Ventura (CERN ; U. Barcelona (main)) ; Vila, Ivan (Cantabria U., Santander)
This work focuses on the study of a set of Low Gain Avalanche Detectors (LGADs) produced by CNM, Barcelona (run 7859). Several samples were irradiated with 24-GeV/c protons up to different fluences, ranging between 10$^{12}$ and 10$^{15}$ n$_\textrm{eq}$/cm$^2$. [...]
SISSA, 2018 - 14 p.
- Published in : PoS Vertex2017 (2018) 041
Fulltext: PDF;
In : The 26th International Workshop on Vertex Detectors, Las Caldas, Spain, 10 - 15 Sep 2017, pp.041
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Study of the radiation-induced damage mechanism in proton irradiated low gain avalanche detectors and its thermal annealing dependence
/ Wiehe, Moritz (CERN ; Freiburg U.) ; Fernández García, Marcos (CERN ; Cantabria Inst. of Phys.) ; Hidalgo, Salvador (Barcelona, Inst. Microelectron.) ; Moll, Michael (CERN) ; Otero Ugobono, Sofia (CERN ; Santiago de Compostela U.) ; Parzefall, Ulrich (Freiburg U.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Ventura Barroso, Ana (CERN ; Barcelona U.) ; Vila Alvarez, Ivan (Cantabria Inst. of Phys.)
In this study the effects of proton irradiation and annealing on Low Gain Avalanche Detectors (LGADs) are investigated. Two LGADs and one p-in-n diode, produced by CNM (Centre Nacional de Microelectrònica 2018), were irradiated with 24 GeV∕c -protons to a fluence of 1×10$^{14}$n$_{eq}$∕cm$^{2}$ and annealed at 60°C for up to 5000 min . [...]
2021 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 986 (2021) 164814
Fulltext: PDF;
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Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
/ Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221
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