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1.
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Lattice sites of implanted Na in GaN and AlN in comparison to other light alkalis and alkaline earths
/ Wahl, Ulrich (Universidade de Lisboa (PT)) ; David Bosne, Eric (Universidade de Lisboa (PT)) ; Amorim, Lígia (KU Leuven) ; Granadeiro Costa, Angelo Rafael (Universidade de Lisboa (PT)) ; De Vries, Bart (KU Leuven) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; da Silva, Manuel Ribeiro (CICECO Aveiro) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE)) ; Vantomme, André (KU Leuven)
/IS634 Collaboration
The lattice location of ion implanted radioactive 24Na (t1/2=14.96 h) in GaN and AlN was determined using the emission channeling technique at the ISOLDE/CERN facility. In the room temperature as-implanted state in both GaN and AlN, the majority of the sodium atoms are found on interstitial sites near the octahedral position, with a minority on cation Ga or Al substitutional sites. [...]
CERN-ISOLDE-2021-003.-
2020 - 12 p.
- Published in : J. Appl. Phys. 128 (2020) 045703
Postprint: PDF; Supplemental Material: PDF;
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2.
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Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond
/ Wahl, Ulrich (Universidade de Lisboa (PT)) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; Villarreal, Renan (KU Leuven) ; Bourgeois, Emilie (Hasselt University) ; Gulka, Michal (Hasselt University) ; Nesladek, Milos (Hasselt University) ; Vantomme, André (KU Leuven) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE))
/EC-SLI Collaboration ; IS368 Collaboration
We demonstrate formation of the ideal split-vacancy configuration of the Sn-vacancy center upon implantation into natural diamond. Using beta-emission channeling following low fluence 121Sn implantation (2E12 atoms/cm2, 60 keV) at the ISOLDE facility at CERN, we directly identified and quantified the atomic configurations of the Sn-related centers. [...]
CERN-ISOLDE-2021-002.-
2020 - 7 p.
- Published in : Phys. Rev. Lett. 125 (2020) 045301
Postprint: PDF; Supplemental material: PDF;
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3.
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Lattice location of implanted transition metals in 3C–SiC
/ Granadeiro Costa, Angelo Rafael (Universidade de Lisboa (PT)) ; Wahl, Ulrich (Universidade de Lisboa (PT)) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; David Bosne, Eric (Universidade de Lisboa (PT)) ; Amorim, Lígia (KU Leuven (BE)) ; Silva, Daniel (Universidade do Porto (PT)) ; Castro Ribeiro Da Silva, Manuel (Universidade de Lisboa (PT)) ; Bharuth-Ram, Krishanlal (University of Kwazulu - Natal (ZA)) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE))
/EC-SLI Collaboration
We have investigated the lattice location of implanted transition metal (TM) 56Mn, 59Fe and 65Ni ions in undoped single-crystalline cubic 3C–SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (TC). [...]
CERN-OPEN-2017-022.-
Lisboa : Instituto Superior Técnico, 2017 - 11 p.
- Published in : J. Phys. D 50 (2017) 215101
Preprint: PDF;
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4.
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5.
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Direct observation of the lattice sites of implanted manganese in silicon
/ da Silva, Daniel José ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Decoster, Stefan (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisboa U.) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.)
/IS453 Collaboration ; EC-SLI Collaboration
We have studied the influence of electronic doping on the preferred lattice sites of implanted 61Co, and the related stabilities against thermal annealing, in silicon. Using the beta- emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (near-BC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. [...]
CERN-OPEN-2017-007.-
Porto, Portugal : Porto U., 2016 - 7 p.
- Published in : Appl. Phys. A 122 (2016) 241
Preprint: PDF;
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6.
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Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As
/ EC-SLI Collaboration
We determined the lattice location of Mn in ferromagnetic (Ga,Mn)As using the electron emission channeling technique. We show that interstitial Mn occupies the tetrahedral site with As nearest neighbors (TAs) both before and after thermal annealing at 200 °C, whereas the occupancy of the tetrahedral site with Ga nearest neighbors (TGa) is negligible. [...]
CERN-OPEN-2017-006.-
Leuven, Belgium : Leuven U., 2015 - 5 p.
- Published in : Appl. Phys. Lett. 106 (2015) 012406
Preprint: PDF;
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7.
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Lattice location of Mg in GaN: a fresh look at doping limitations
/ EC-SLI Collaboration
Radioactive 27Mg (t1/2=9.5 min) was implanted into GaN of different doping types at CERN’s ISOLDE facility and its lattice site determined via beta− emission channeling. Following implantations between room temperature and 800°C, the majority of 27Mg occupies the substitutional Ga sites, however, below 350°C significant fractions were also found on interstitial positions ~0.6 Å from ideal octahedral sites. [...]
CERN-OPEN-2017-005.-
Lisboa, Portugal : Lisbon, IST, 2017 - 5 p.
- Published in : Phys. Rev. Lett. 118 (2017) 095501
Preprint: PDF;
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8.
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Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments
/ Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Augustyns, Valerie (Leuven U.) ; De Lemos Lima, Tiago Abel (Leuven U.) ; Granadeiro Costa, Angelo Rafael (Lisbon, IST) ; David Bosne, Eric (Lisbon, IST) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.) ; Da Costa Pereira, Lino Miguel (Leuven U.)
/EC-SLI Collaboration
Although the formation of transition metal-boron pairs is currently well established in silicon processing, the geometry of these complexes is still not completely understood. We investigated the lattice location of the transition metals manganese, iron, cobalt and nickel in n- and p+-type silicon by means of electron emission channeling. [...]
CERN-OPEN-2017-004.-
Leuven, Belgium : Leuven U., 2016 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., B 371 (2016) 59-62
Fulltext: PDF;
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9.
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Emission channeling studies on transition-metal doped GaN and ZnO: Cation versus anion substitution
/ Da Costa Pereira, Lino Miguel (Leuven U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Silva, Daniel (Porto U.) ; Decoster, Stefan (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.)
/EC-SLI Collaboration
The magnetic and electric properties of impurities in semiconductors are strongly dependent on the lattice sites which they occupy. While the majority site can often be predicted based on chemical similarities with the host elements and is usually simple to confirm experimentally, minority sites are far more complicated to predict, detect and identify. [...]
CERN-OPEN-2017-003.-
Leuven, Belgium : Leuven U., 2014 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., B 332 (2014) 143-147
Fulltext: PDF;
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10.
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Origin of the lattice sites occupied by implanted Co in Si
/ Silva, Daniel (Porto U.) ; Wahl, Ulrich (Lisbon, IST) ; Martins Correia, Joao (Lisbon, IST) ; Da Costa Pereira, Lino Miguel (Leuven U.) ; Amorim, Lígia (Leuven U.) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Esteves De Araujo, Araujo Joao Pedro (Porto U.)
/EC-SLI Collaboration
We have investigated the lattice location of implanted 61Co in silicon. By means of emission channeling, three different lattice sites have been identified: ideal substitutional sites, displaced bond-centered sites and displaced tetrahedral interstitial sites. [...]
CERN-OPEN-2017-002.-
Porto, Portugal : Porto U., 2014 - 5 p.
- Published in : Semiconductor Science and Technology: 29 (2014) , pp. 125006
Preprint: PDF;
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