CERN Accelerating science

Preprint
Report number	JINR-R9-2002-244
Title	Switching processes in TGS crystals irradiated by high-current electron beam
Related title	Protsessy pereklyucheniya v kristallakh TGS, obluchennykh sil'notochnym impul'snym puchkom ehlektronov
Author(s)	Efimov, V V ; Ivanov, V V ; Klevtsova, E A ; Tyutyunnikov, S I
Publication	2002
Imprint	2002
Number of pages	20
Subject category	Condensed Matter
Abstract	The relaxation processes study of the dielectric permittivity epsilon during commutation of the external electric field in triglycine sulphate (NH sub 2 CH sub 2 COOH) sub 3 centre dot H sub 2 SO sub 4 (TGS) single crystal plates before and after irradiation by a high-current pulsed electron beam with different doses at various temperatures is presented. The parameters of the electron beam produced by the accelerator facility as a source were: energy E = 250 keV, current density I = 1000 A/cm sup 2 , fluence F = 15 J/cm sup 2 , pulse duration tau = 300 ns, beam density 5 centre dot sup 1 5 electrons/cm sup 2 per pulse. It was shown that the dependences of epsilon (t) are described by the Kohlrausch law: epsilon (t) approx exp (-t/tau) supalpha, where alpha is the average relaxation time of the all volume samples, 0 < alpha <1. Besides, it was found that switching processes in the irradiated crystals were much more intensive than those in the non-irradiated ones. The relaxation times decrease with rising of temperature up to the phase transition during commutation of the small external electric field.