CERN Accelerating science

Article
Title	Comparative study of <111> and <100> crystals and capacitance measurements on Si strip detectors in CMS
Author(s)	Albergo, S ; Angarano, M M ; Azzi, P ; Babucci, E ; Bacchetta, N ; Bader, A J ; Bagliesi, G ; Basti, A ; Biggeri, U ; Bilei, G M ; Bisello, D ; Boemi, D ; Bosi, F ; Borrello, L ; Bozzi, C ; Braibant, S ; Breuker, Horst ; Bruzzi, Mara (INFN and Universita', Firenze, Italy) ; Buffini, A ; Busoni, S ; Candelori, A ; Caner, A ; Castaldi, R ; Castro, A ; Catacchini, E ; Checcucci, B ; Ciampolini, P ; Civinini, C ; Creanza, D ; D'Alessandro, R ; Da Rold, M ; Demaria, N ; De Palma, M ; Dell'Orso, R ; Marina, R D ; Dutta, S ; Eklund, C ; Peisert, Anna (CERN) ; Feld, L ; Fiore, L ; Focardi, E ; French, M ; Freudenreich, Klaus ; Fürtjes, A ; Giassi, A ; Giorgi, M A ; Giraldo, A ; Glessing, B ; Gu, W H ; Hall, G ; Hammarström, R ; Hebbeker, T ; Hrubec, Josef ; Huhtinen, M ; Kaminski, A ; Karimäki, V ; Saint-Koenig, M ; Krammer, Manfred ; Lariccia, P ; Lenzi, M ; Loreti, M ; Lübelsmeyer, K ; Lustermann, W ; Mättig, P ; Maggi, G ; Mannelli, M ; Mantovani, G C ; Marchioro, A ; Mariotti, C ; Martignon, G ; McEvoy, B ; Meschini, M ; Messineo, A ; Migliore, E ; My, S ; Paccagnella, A ; Palla, Fabrizio ; Pandoulas, D ; Papi, A ; Parrini, G ; Passeri, D ; Pieri, M ; Piperov, S ; Potenza, R ; Raducci, V ; Raffaelli, F ; Raymond, M ; Santocchia, A ; Schmitt, B ; Selvaggi, G ; Servoli, L ; Sguazzoni, G ; Siedling, R ; Silvestris, L ; Skog, K ; Starodumov, Andrei ; Stavitski, I ; Stefanini, G ; Tempesta, P ; Tonelli, G ; Tricomi, A ; Tuuva, T ; Vannini, C ; Verdini, P G ; Viertel, Gert M ; Xie, Z ; Li Ya Hong ; Watts, S ; Wittmer, B
Affiliation	(INFN, Catania Univ.)
Publication	1999
In:	Nuovo Cimento A 112 (1999) 1261-9
DOI	10.1007/BF03185592
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; CMS
Abstract	For the construction of the silicon microstrip detectors for the tracker of the CMS experiment, two different substrate choices were investigated: A high-resistivity (6 k Omega cm) substrate with <111> crystal orientation and a low-resistivity (2 k Omega cm) one with <100> crystal orientation. The interstrip and backplane capacitances were measured before and after the exposure to radiation in a range of strip pitches from 60 mu m to 240 mu m and for values of the width-over-pitch ratio between 0.1 and 0.5. (3 refs).