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Article
Report number arXiv:2403.08952
Title Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
Author(s) Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) Afficher les 95 auteurs
Publication 2024-09-21
Imprint 2024-03-13
Number of pages 40
In: Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896
DOI 10.1016/j.nima.2024.169896 (publication)
Subject category physics.ins-det ; Detectors and Experimental Techniques
Abstract Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 μm). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 1016 1 MeV neq cm2. Here the results from prototypes that feature direct analogue output of a 4×4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using 55Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.
Copyright/License preprint: (License: CC BY 4.0)
publication: © 2024-2025 The Authors (License: CC BY 4.0)



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 Notice créée le 2024-03-28, modifiée le 2024-11-12


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