| ホーム > CERN Departments > Physics (PH) > EP-R&D Programme on Technologies for Future Experiments > EP-R&D Programme on Technologies for Future Experiments (EP RDET) > Total ionizing dose effects on ring-oscillators and SRAMs in a commercial 28 nm CMOS technology |
| Article | |
| Title | Total ionizing dose effects on ring-oscillators and SRAMs in a commercial 28 nm CMOS technology |
| Author(s) | Borghello, G (CERN) ; Bergamin, G (CERN) ; Ceresa, D (CERN) ; Pejašinović, R (CERN) ; Diaz, F P (CERN) ; Kloukinas, K (CERN) ; Pulli, A (CERN) ; Ripamonti, G (CERN) ; Caratelli, A (CERN) ; Andorno, M (CERN) |
| Publication | 2023 |
| Number of pages | 8 |
| In: | JINST 18, 02 (2023) pp.C02003 |
| In: | Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02003 |
| DOI | 10.1088/1748-0221/18/02/C02003 |
| Subject category | Detectors and Experimental Techniques |
| Project | CERN-EP-RDET |
| Abstract | A test chip with 368 ring-oscillators and 4 different SRAMs has been designed to study the effect of total ionizing dose on a commercial 28 nm CMOS technology. The chip has been exposed to 1 Grad(SiO$_{2}$), followed by a week of annealing at T = 100 °C. The results will be compared to those obtained on single (i.e., isolated) devices in the same 28 nm process and on a similar chip in 65 nm CMOS technology. This test confirms the robustness of the 28 nm technology to ionizing radiation, enabling the development of ASICs capable of surviving in environments with hundreds of Mrad. |
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