| ATLAS Note | |
| Report number | ATL-ITK-PROC-2024-013 |
| Title | Understanding the Humidity Sensitivity of Sensors with TCAD Simulations |
| Author(s) |
Ninca, Ilona-Stefana (Deutsches Elektronen-Synchrotron (DE)) ; Bloch, Ingo (Deutsches Elektronen-Synchrotron (DE)) ; Bruers, Ben (Deutsches Elektronen-Synchrotron (DE)) ; Fadeyev, Vitaliy (University of California,Santa Cruz (US)) ; Fernandez-Tejero, Xavi (Simon Fraser University (CA)) ; Jessiman, Callan (Carleton University (CA)) ; Keller, John Stakely (Carleton University (CA)) ; Klein, Christoph Thomas (Carleton University (CA)) ; Koffas, Thomas (Carleton University (CA)) ; Lacker, Heiko Markus (Humboldt University of Berlin (DE)) ; Scharf, Christian (Humboldt University of Berlin (DE)) ; Staats, Ezekiel (Carleton University (CA)) ; Ullan, Miguel (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Unno, Yoshinobu (High Energy Accelerator Research Organization (JP)) |
| Corporate Author(s) | The ATLAS collaboration |
| Publication | 2024 |
| Imprint | 28 Feb 2024 |
| Number of pages | 7 |
| In: | 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023 |
| Subject category | Particle Physics - Experiment |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Free keywords | ATLAS Experiment ; Silicon Sensors ; TCAD Simulations ; Top-TC |
| Abstract | The breakdown voltage of silicon sensors without special surface is known to be affected by the ambient humidity. To understand the sensor’s humidity sensitivity, Synopsys TCAD was used to simulate n-in-p test structures for different effective relative humidity. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field, carrier densities and avalanche breakdown in the periphery of p-bulk silicon sensors is presented. |
Record created 2024-02-28, last modified 2024-02-28
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