CERN Accelerating science

Article
Report number arXiv:2306.11760
Title Gain layer degradation study after neutron and proton irradiations in Low Gain Avalanche Diodes
Author(s) Curras Rivera, Esteban (CERN) ; La Rosa, Alessandro (CERN) ; Moll, Michael (CERN) ; Zareef, Fasih (AGH-UST, Cracow)
Publication 2023-10-18
Imprint 2023-06-20
Number of pages 10
In: JINST 18 (2023) P10020
DOI 10.1088/1748-0221/18/10/P10020
Subject category hep-ex ; Particle Physics - Experiment ; physics.ins-det ; Detectors and Experimental Techniques
Project CERN-EP-RDET
Abstract The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the range of 1.5 - 2.5e15 neq/cm2 at the end of their lifetime and, Low Gain Avalanche Diode (LGAD) has been chosen as their baseline detection technology. To better understand the performance of LGAD detectors in these environments, a gain layer degradation study after neutron and proton irradiations up to a fluence of 1.5e15 neq/cm2 was performed. LGADs manufactured at Hamamatsu Photonics (HPK) and Centro Nacional de Microelectrónica (CNM-IMB) were chosen for this study and, a comparison in the gain layer degradation after exposure to reactor neutrons at the Jozef Stefan Institute (JSI) in Ljubjana and 24 GeV/c protons at the CERN-PS is presented here.
Copyright/License preprint: (License: CC BY-NC-ND 4.0)
publication: © 2023-2025 The Author(s) (License: CC-BY-4.0)



Corresponding record in: Inspire


 Запись создана 2023-10-10, последняя модификация 2024-07-05


Полный текст:
2306.11760 - Загрузка полного текстаPDF
document - Загрузка полного текстаPDF