Accueil > A new Low Gain Avalanche Diode concept: the double-LGAD |
Article | |
Report number | arXiv:2307.14320 |
Title | A new Low Gain Avalanche Diode concept: the double-LGAD |
Author(s) | Carnesecchi, F. (CERN) ; Strazzi, S. (INFN, Bologna ; U. Bologna, DIFA) ; Alici, A. (INFN, Bologna ; U. Bologna, DIFA) ; Arcidiacono, R. (INFN, Turin ; Piemonte Orientale U., Alessandria) ; Cartiglia, N. (INFN, Turin) ; Cavazza, D. (INFN, Bologna) ; Durando, S. (INFN, Turin ; Turin Polytechnic) ; Ferrero, M. (INFN, Turin) ; Margotti, A. (INFN, Bologna) ; Menzio, L. (INFN, Turin ; Turin U.) ; Nania, R. (INFN, Bologna) ; Sabiu, B. (INFN, Bologna ; U. Bologna, DIFA) ; Scioli, G. (INFN, Bologna ; U. Bologna, DIFA) ; Siviero, F. (INFN, Turin) ; Sola, V. (INFN, Turin ; Turin U.) ; Vignola, G. (INFN, Bologna) |
Publication | 2023-11-07 |
Imprint | 2023-07-26 |
Number of pages | 10 |
Note | arXiv admin note: text overlap with arXiv:2208.05717 |
In: | Eur. Phys. J. Plus 138 (2023) 990 |
DOI | 10.1140/epjp/s13360-023-04621-x |
Subject category | physics.ins-det ; Detectors and Experimental Techniques |
Abstract | This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm. |
Copyright/License | preprint: (License: arXiv nonexclusive-distrib 1.0) publication: © 2023-2025 The Author(s) (License: CC-BY-4.0) |