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Article
Report number arXiv:2307.14320
Title A new Low Gain Avalanche Diode concept: the double-LGAD
Author(s) Carnesecchi, F. (CERN) ; Strazzi, S. (INFN, Bologna ; U. Bologna, DIFA) ; Alici, A. (INFN, Bologna ; U. Bologna, DIFA) ; Arcidiacono, R. (INFN, Turin ; Piemonte Orientale U., Alessandria) ; Cartiglia, N. (INFN, Turin) ; Cavazza, D. (INFN, Bologna) ; Durando, S. (INFN, Turin ; Turin Polytechnic) ; Ferrero, M. (INFN, Turin) ; Margotti, A. (INFN, Bologna) ; Menzio, L. (INFN, Turin ; Turin U.) ; Nania, R. (INFN, Bologna) ; Sabiu, B. (INFN, Bologna ; U. Bologna, DIFA) ; Scioli, G. (INFN, Bologna ; U. Bologna, DIFA) ; Siviero, F. (INFN, Turin) ; Sola, V. (INFN, Turin ; Turin U.) ; Vignola, G. (INFN, Bologna)
Publication 2023-11-07
Imprint 2023-07-26
Number of pages 10
Note arXiv admin note: text overlap with arXiv:2208.05717
In: Eur. Phys. J. Plus 138 (2023) 990
DOI 10.1140/epjp/s13360-023-04621-x
Subject category physics.ins-det ; Detectors and Experimental Techniques
Abstract This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm.
Copyright/License preprint: (License: arXiv nonexclusive-distrib 1.0)
publication: © 2023-2025 The Author(s) (License: CC-BY-4.0)



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 Notice créée le 2023-08-04, modifiée le 2024-09-06


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