Hem > CERN Departments > Physics (PH) > EP-R&D Programme on Technologies for Future Experiments > EP-R&D Programme on Technologies for Future Experiments (EP RDET) > Development of novel single-die hybridisation processes for small-pitch pixel detectors |
Article | |
Report number | arXiv:2210.02132 ; CLICdp-Conf-2022-001 |
Title | Development of novel single-die hybridisation processes for small-pitch pixel detectors |
Author(s) | Svihra, Peter (CERN) ; Braach, Justus (Hamburg University (DE)) ; Buschmann, Eric (CERN) ; Dannheim, Dominik (CERN) ; Dort, Katharina (Justus-Liebig-Universitaet Giessen (DE)) ; Fritzsch, Thomas (Fraunhofer IZM) ; Kristiansen, H (Conpart) ; Rothermund, M (Fraunhofer IZM) ; Schmidt, Janis Viktor (KIT - Karlsruhe Institute of Technology (DE)) ; Vicente Barreto Pinto, Mateus (Universite de Geneve (CH)) ; Williams, Morag Jean (University of Glasgow (GB)) |
Publication | 2023-03-15 |
Imprint | 2022-10-28 |
Number of pages | 12 |
Note | 23rd iWoRiD proceedings |
Published in: | JINST |
Presented at | 23rd International Workshop for Radiation Imaging Detectors, Riva Del Garda, It, 26 - 30 Jun 2022, pp.C03008 |
DOI | 10.1088/1748-0221/18/03/C03008 |
Subject category | Particle Physics - Experiment ; Detectors and Experimental Techniques |
Accelerator/Facility, Experiment | CLIC |
Study | CLICdp |
Project | CERN-EP-RDET |
Abstract | Hybrid pixel detectors require a reliable and cost-effective interconnect technology adapted to the pitch and die sizes of the respective applications. During the ASIC and sensor R&D; phase, especially for small-scale applications, such interconnect technologies need to be suitable for the assembly of single dies, typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D; programme and the AIDAinnova collaboration, innovative hybridisation concepts targeting vertex-detector applications at future colliders are under development. Recent results of two novel interconnect methods for pixel pitches of 25 µm and 55 µm are presented in this contribution – an industrial fine-pitch SnAg solder bump-bonding process adapted to single-die processing using support wafers, as well as a newly developed in-house single-die interconnection process based on Anisotropic Conductive Film (ACF). The fine-pitch bump-bonding process is qualified with hybrid assemblies from a recent bonding campaign at Frauenhofer IZM. Individual CLICpix2 ASICs with 25 µm pixel pitch were bump-bonded to active-edge silicon sensors with thicknesses ranging from 50 µm to 130 µm. The device characterisation was conducted in the laboratory as well as during a beam test campaign at the CERN SPS beam-line, demonstrating an interconnect yield of about 99.7%. |
Other source | Inspire |
Copyright/License | Preprint: (License: CC-BY-4.0) publication: © 2023-2024 IOP Publishing Ltd and Sissa Medialab |
Submitted by | [email protected] |