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Article
Report number arXiv:2210.02132 ; CLICdp-Conf-2022-001
Title Development of novel single-die hybridisation processes for small-pitch pixel detectors
Author(s) Svihra, Peter (CERN) ; Braach, Justus (Hamburg University (DE)) ; Buschmann, Eric (CERN) ; Dannheim, Dominik (CERN) ; Dort, Katharina (Justus-Liebig-Universitaet Giessen (DE)) ; Fritzsch, Thomas (Fraunhofer IZM) ; Kristiansen, H (Conpart) ; Rothermund, M (Fraunhofer IZM) ; Schmidt, Janis Viktor (KIT - Karlsruhe Institute of Technology (DE)) ; Vicente Barreto Pinto, Mateus (Universite de Geneve (CH)) ; Williams, Morag Jean (University of Glasgow (GB))
Publication 2023-03-15
Imprint 2022-10-28
Number of pages 12
Note 23rd iWoRiD proceedings
Published in: JINST
Presented at 23rd International Workshop for Radiation Imaging Detectors, Riva Del Garda, It, 26 - 30 Jun 2022, pp.C03008
DOI 10.1088/1748-0221/18/03/C03008
Subject category Particle Physics - Experiment ; Detectors and Experimental Techniques
Accelerator/Facility, Experiment CLIC
Study CLICdp
Project CERN-EP-RDET
Abstract Hybrid pixel detectors require a reliable and cost-effective interconnect technology adapted to the pitch and die sizes of the respective applications. During the ASIC and sensor R&D; phase, especially for small-scale applications, such interconnect technologies need to be suitable for the assembly of single dies, typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D; programme and the AIDAinnova collaboration, innovative hybridisation concepts targeting vertex-detector applications at future colliders are under development. Recent results of two novel interconnect methods for pixel pitches of 25 µm and 55 µm are presented in this contribution – an industrial fine-pitch SnAg solder bump-bonding process adapted to single-die processing using support wafers, as well as a newly developed in-house single-die interconnection process based on Anisotropic Conductive Film (ACF). The fine-pitch bump-bonding process is qualified with hybrid assemblies from a recent bonding campaign at Frauenhofer IZM. Individual CLICpix2 ASICs with 25 µm pixel pitch were bump-bonded to active-edge silicon sensors with thicknesses ranging from 50 µm to 130 µm. The device characterisation was conducted in the laboratory as well as during a beam test campaign at the CERN SPS beam-line, demonstrating an interconnect yield of about 99.7%.
Other source Inspire
Copyright/License Preprint: (License: CC-BY-4.0)
publication: © 2023-2024 IOP Publishing Ltd and Sissa Medialab
Submitted by [email protected]



 


 Journalen skapades 2022-10-28, och modifierades senast 2024-07-05