| ATLAS Note | |
| Report number | ATL-ITK-PROC-2022-005 |
| Title | Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors |
| Author(s) |
Kroll, Jiri (Czech Academy of Sciences (CZ)) ; Allport, Philip Patrick (University of Birmingham (GB)) ; Chisholm, Andrew Stephen (University of Birmingham (GB)) ; Fadeyev, Vitaliy (University of California,Santa Cruz (US)) ; George, William Frederick (University of Birmingham (GB)) ; Gonella, Laura (University of Birmingham (GB)) ; Kopsalis, Ioannis (University of Birmingham (GB)) ; Kvasnicka, Jiri (Czech Academy of Sciences (CZ)) ; Latonova, Vera (Czech Academy of Sciences (CZ)) ; Lomas, Joshua David (University of Birmingham (GB)) ; Mikestikova, Marcela (Czech Academy of Sciences (CZ)) ; Shi, Xin (Chinese Academy of Sciences (CN)) ; Tuma, Pavel (Czech Academy of Sciences (CZ)) ; Ullan, Miguel (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Unno, Yoshinobu (High Energy Accelerator Research Organization (JP)) ; Martinez-Mc Kinney, Forest (University of California,Santa Cruz (US)) |
| Corporate Author(s) | The ATLAS collaboration |
| Publication | 2022 |
| Imprint | 06 Jul 2022 |
| Number of pages | 2 |
| In: | 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022 |
| Subject category | Particle Physics - Experiment |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Free keywords | ATLAS Innter Tracker ; silicon strip sensors ; gamma irradiation ; annealing ; interstrip resistance |
| Abstract | The powering configuration of the silicon strip modules developed for the new Inner Tracker of the ATLAS experiment includes a voltage of up to 0.5 V across the coupling capacitor of each individual strip. However, this voltage is usually not applied in the sensor irradiation studies due to the significant technical and logistical complications. To study the effect of an irradiation and a subsequent beneficial annealing on the strip sensors in real experimental conditions, four prototype ATLAS17LS miniature sensors were irradiated by $^{60}$Co source and annealed, both with and without the bias voltage of 0.5 V applied across the coupling capacitors. The values of interstrip resistance measured on irradiated samples before and after annealing indicate that increase of radiation damage caused by the applied voltage can be compensated by the presence of this voltage during annealing. |
Записът е създаден на 2022-07-06, последна промяна на 2022-07-06
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