| ATLAS Slides | |
| Report number | ATL-ITK-SLIDE-2022-232 |
| Title | Characterization of the Polysilicon Resistor in Silicon Strip Sensors for ATLAS Inner Tracker as a Function of Temperature, Pre- And Post-Irradiation |
| Author(s) |
Latonova, Vera (Czech Academy of Sciences (CZ)) ; Allport, Philip Patrick (University of Birmingham (GB)) ; Bach Marques, Eric (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Bernabeu Alberola, Jose (Univ. of Valencia and CSIC (ES)) ; Chisholm, Andrew Stephen (University of Birmingham (GB)) ; Cindro, Vladimir (Jozef Stefan Institute (SI)) ; Fadeyev, Vitaliy (University of California,Santa Cruz (US)) ; Federicova, Pavla (Czech Academy of Sciences (CZ)) ; Fernandez-Tejero, Xavi (Simon Fraser University (CA)) ; George, William Frederick (University of Birmingham (GB)) ; Gonella, Laura (University of Birmingham (GB)) ; Hara, Kazuhiko (University of Tsukuba (JP)) ; Hirose, Shigeki (University of Tsukuba (JP)) ; Ishii, Tatsuya (High Energy Accelerator Research Organization (JP)) ; Knight, Timothy Michael (University of Toronto (CA)) ; Kopsalis, Ioannis (University of Birmingham (GB)) ; Kroll, Jiri (Czech Academy of Sciences (CZ)) ; Kvasnicka, Jiri (Czech Academy of Sciences (CZ)) ; Lacasta Llacer, Carlos (Univ. of Valencia and CSIC (ES)) ; Lomas, Joshua David (University of Birmingham (GB)) ; Mandic, Igor (Jozef Stefan Institute (SI)) ; Mikestikova, Marcela (Czech Academy of Sciences (CZ)) ; Orr, Robert (University of Toronto (CA)) ; Rossi, Edoardo ; Solaz Contell, Carles (Univ. of Valencia and CSIC (ES)) ; Soldevila Serrano, Urmila (Univ. of Valencia and CSIC (ES)) ; Ullan, Miguel (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Unno, Yoshinobu (High Energy Accelerator Research Organization (JP)) |
| Corporate author(s) | The ATLAS collaboration |
| Submitted to | 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022 |
| Submitted by | [email protected] on 22 Jun 2022 |
| Subject category | Particle Physics - Experiment |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Abstract | The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected total integrated luminosity of $4000\, \mathrm{fb}^{−1}$ means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of $1.6 \cdot 10^{15}$ $1\, \mathrm{MeV}$ $\mathrm{n_{eq}/cm^2}$ and $0.66\, \mathrm{MGy}$, respectively, including a safety factor of $1.5$. Radiation hard n${}^+$-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n${}^+$ implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We will discuss the contributions by parameterizing the excitation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips. |
Notice créée le 2022-06-22, modifiée le 2022-06-22
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