Home > Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS |
Article | |
Title | Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS |
Author(s) | Biereigel, Stefan (CERN ; Leuven U. ; Brandenburg Tech. U.) ; Kulis, Szymon (CERN) ; Leroux, Paul (Leuven U.) ; Moreira, Paulo (CERN) ; Kolpin, Alexander (Hamburg, Tech. U.) ; Prinzie, Jeffrey (Leuven U.) |
Publication | 2021 |
Number of pages | 11 |
In: | IEEE Trans. Nucl. Sci. 68 (2021) 2587-2597 |
DOI | 10.1109/tns.2021.3121029 |
Subject category | Detectors and Experimental Techniques |
Abstract | This article describes a previously unreported single-event radiation effect in spiral inductors manufactured in a commercial CMOS technology when subjected to ionizing radiation. Inductors play a major role as the component determining the frequency of LC tank oscillators, which is why any radiation effect in these passive components can have a detrimental impact on the performance of clock generation circuits. Different experiments performed to localize and characterize the singleevent effect (SEE) response in a radiation-hardened PLL circuit are discussed and presented together with a hypothesis for the underlying physical mechanism. |
Copyright/License | publication: (License: CC-BY-4.0) |