| Početna stranica > Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose |
| Published Articles | |
| Title | Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose |
| Author(s) | Nikolaou, Aristeidis (Crete, Tech. U.) ; Chevas, Loukas (Crete, Tech. U.) ; Papadopoulou, Alexia (Crete, Tech. U.) ; Makris, Nikolaos (Crete, Tech. U.) ; Bucher, Matthias (Crete, Tech. U.) ; Borghello, Giulio (Udine U.) ; Faccio, Federico (CERN) |
| Publication | IEEE, 2019 |
| Number of pages | 4 |
| In: | 26th International Conference on Mixed Design of Integrated Circuits and System, Rzeszow, Poland, 27 - 29 Jun 2019, pp.306-309 |
| DOI | 10.23919/MIXDES.2019.8787098 |
| Subject category | Detectors and Experimental Techniques |
| Project | CERN HL-LHC |
| Abstract | Frond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics. |
| Copyright/License | publication: © 2019-2025 Department of Microelectronics & Computer Science, Lodz University of Technology |