CERN Accelerating science

Article
Report number	arXiv:1807.05953
Title	Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
Author(s)	Kiehn, Moritz (Geneva U.) ; Di Bello, Francesco Armando (Geneva U.) ; Benoit, Mathieu (Geneva U.) ; Casanova Mohr, Raimon (Barcelona, IFAE) ; Chen, Hucheng (Brookhaven Natl. Lab.) ; Chen, Kai (Brookhaven Natl. Lab.) ; D.M.S., Sultan (Geneva U.) ; Ehrler, Felix (Geneva U. ; KIT, Karlsruhe, IPE) ; Ferrere, Didier (Geneva U.) ; Frizell, Dylan (U. Oklahoma, Norman) ; Gonzalez Sevilla, Sergio (Geneva U.) ; Iacobucci, Giuseppe (Geneva U.) ; Lanni, Francesco (Brookhaven Natl. Lab.) ; Liu, Hongbin (Brookhaven Natl. Lab. ; Hefei, CUST) ; Merlassino, Claudia (U. Bern, AEC) ; Metcalfe, Jessica (Argonne) ; Miucci, Antonio (U. Bern, AEC) ; Peric, Ivan (KIT, Karlsruhe, IPE) ; Prathapan, Mridula (KIT, Karlsruhe, IPE) ; Schimassek, Rudolf (KIT, Karlsruhe, IPE) ; Barreto, Mateus Vicente (Geneva U.) ; Weston, Thomas (Geneva U.) ; Figueras, Eva Vilella (Liverpool U.) ; Weber, Alena (KIT, Karlsruhe, IPE) ; Weber, Michele (U. Bern, AEC) ; Wong, Winnie (Geneva U.) ; Wu, Weihao (Brookhaven Natl. Lab.) ; Zaffaroni, Ettore (Geneva U.) ; Zhang, Hui (KIT, Karlsruhe, IPE) ; Zhang, Matt (Illinois U., Urbana)
Publication	2019-04-21
Imprint	2018-07-16
Number of pages	4
Note	6 pages, 7 figures, 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan
In:	Nucl. Instrum. Methods Phys. Res., A 924 (2019) 104-107
In:	11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.104-107
DOI	10.1016/j.nima.2018.07.061 (publication)
Subject category	physics.ins-det ; Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; ATLAS
Abstract	Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of $10^{15} \text{n}_\text{eq}/\text{cm}^2$ and detection efficiencies above $99.5 \%$. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
Copyright/License	preprint: (License: CC BY-NC-SA 4.0) Elsevier B.V.

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