| Pagina principale > CERN R&D Projects > CERN Detector R&D Projects > RD50 > RD50 Papers > Technology development of p-type microstrip detectors with radiation hard p-spray isolation |
| Published Articles | |
| Title | Technology development of p-type microstrip detectors with radiation hard p-spray isolation |
| Author(s) | Pellegrini, G (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.) ; Díez, S (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) |
| Publication | 2006 |
| Imprint | 2006 |
| Number of pages | 6 |
| In: | Nucl. Instrum. Methods Phys. Res., A 566 (2006) 360-365 |
| DOI | 10.1016/j.nima.2006.07.005 |
| Subject category | Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | RD50 |
| Abstract | A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. The best technological options for the p-spray implant were found by using a simulation software package and dedicated calibration runs. Using the optimized technology, detectors have been fabricated in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance measurements before and after irradiation. The average full depletion voltage measured on the non-irradiated detectors was $V_{\rm{FD}} = 41 \pm 3$ V, while the leakage current density for the microstrip devices at $V_{\rm{FD}} + 20$ V was 400 nA/cm$^2$. |