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Article
Title	Temperature Dependence of Charge Carrier Properties in Single Crystal CVD Diamond Detectors
Author(s)	Jansen, Hendrik (CERN) ; Dobos, Daniel (CERN) ; Eremin, Vladimir ; Pernegger, Heinz (CERN) ; Wermes, Norbert
Publication	2012
Number of pages	9
In:	Phys. Procedia 37 (2012) 2005-2014
In:	2nd International Conference on Technology and Instrumentation in Particle Physics, Chicago, IL, USA, 9 - 14 Jun 2011, pp.2005-2014
DOI	10.1016/j.phpro.2012.02.527
Subject category	Detectors and Experimental Techniques
Abstract	Single crystal chemical-vapour deposition (scCVD) diamonds are interesting for a wide range of applications. For many of them a good understanding of the temperature dependence of charge carrier transport mechanisms and properties is crucial. Measurements on the temperature dependence of charge carrier movement in scCVD diamond semiconductor detectors are presented. The evolution of the pulse shape of the detector response from impinging α particles is measured as a function of temperature employing the α-induced transient current technique (α-TCT) within a temperature range from 67 K to 295 K. The measurements are used to extract the drift mobility, drift velocity, and saturation velocity, in terms of which the results are interpreted.
Copyright/License	publication: © 2012-2025 Elsevier (License: CC-BY-NC-ND-3.0)

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