CERN Accelerating science

Article
Report number CERN-OPEN-2014-011
Title Minority anion substitution by Ni in ZnO
Author(s) Pereira, Lino Miguel da Costa (Leuven U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Correia, João Guilherme (IST/ITN, Lisbon) ; Amorim, Lígia Marina (Leuven U.) ; Silva, Daniel José (Porto U.) ; David-Bosne, Eric (IST/ITN, Lisbon ; Aveiro U.) ; Decoster, Stefan (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.)
Collaboration EC-SLI Collaboration
Publication 2013
Imprint 21 Aug 2013
Number of pages 4
In: Appl. Phys. Lett. 103 (2013) 091905
DOI 10.1063/1.4820254
Subject category Condensed Matter
Accelerator/Facility, Experiment CERN ISOLDE ; IS453
Free keywords emission channeling
Abstract We report on the lattice location of implanted Ni in ZnO using the $\beta$− emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors.

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