Home > Minority anion substitution by Ni in ZnO |
Article | |
Report number | CERN-OPEN-2014-011 |
Title | Minority anion substitution by Ni in ZnO |
Author(s) | Pereira, Lino Miguel da Costa (Leuven U.) ; Wahl, Ulrich (IST/ITN, Lisbon) ; Correia, João Guilherme (IST/ITN, Lisbon) ; Amorim, Lígia Marina (Leuven U.) ; Silva, Daniel José (Porto U.) ; David-Bosne, Eric (IST/ITN, Lisbon ; Aveiro U.) ; Decoster, Stefan (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.) |
Collaboration | EC-SLI Collaboration |
Publication | 2013 |
Imprint | 21 Aug 2013 |
Number of pages | 4 |
In: | Appl. Phys. Lett. 103 (2013) 091905 |
DOI | 10.1063/1.4820254 |
Subject category | Condensed Matter |
Accelerator/Facility, Experiment | CERN ISOLDE ; IS453 |
Free keywords | emission channeling |
Abstract | We report on the lattice location of implanted Ni in ZnO using the $\beta$− emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. |