| Article | |
| Report number | physics/0612135 |
| Title | Planar Edgeless Silicon Detectors for the TOTEM Experiment |
| Author(s) |
Ruggiero, G. (CERN) ; Alagoz, E. ; Avati, V. ; Bassetti, V. ; Berardi, V. ; Bergholm, V. ; Boccone, V. ; Bozzo, M. ; Buzzo, A. ; Catanesi, M.G. ; Cereseto, R. ; Cuneo, S. ; Deile, M. ; De Oliveira, R. ; Eggert, K. ; Egorov, N. ; Eremin, I. ; Ferro, F. ; Hasi, J. ; Lokajiccek, M. ; Haug, F. ; Herzog, R. ; Jarron, P. ; Kalliopuska, J. ; Kiiskinen, A. ; Kurvinen, K. ; Kok, A. ; Kundrat, W. ; Lauhakangas, R. ; Lokajicek, M. ; Macina, D. ; Macri, M. ; Maki, T. ; Minutoli, S. ; Mirabito, L. ; Morelli, A. ; Musico, P. ; Negri, M. ; Niewiadomski, H. ; Noschis, E. ; Oljemark, F. ; Orava, R. ; Oriunno, M. ; Osterberg, K. ; Palmieri, V.G. ; Puppo, R. ; Radicioni, E. ; Rudischer, R. ; Saarikko, H. ; Sanguinetti, G. ; Santroni, A. ; Siegrist, P. ; Sidorov, A. ; Sette, G. ; Smotlacha, J. ; Snoeys, W. ; Tapprogge, S. ; Toppinen, A. ; Verdier, A. ; Watts, S. ; Wobst, E. ; Lyon, IPN |
| Affiliation | (CERN) ; (Dep. of Phys. Sciences, Univ. of Helsinki) ; (Helsinki Inst. of Phys.) ; (INFN Genoa) ; (INFN Bari) ; (Politecnico di Bari) ; (Inst. of Material Science and Tech., Zelenograd, Moscow) ; (Megaimpulse/Ioffe Physico-Technical Inst., St. Petersburg) ; (Elec. and Comp. Engineering Dep., Brunel Univ., Uxbridge) ; (ILK Dresden) ; (Inst. of Phys., Academy of Sciences, Prague) ; (Physique Nucleaire de Lyon) ; (INFN, Pisa) |
| Publication | 2005 |
| Imprint | 13 Dec 2006 |
| Number of pages | 4 |
| In: | IEEE Trans. Nucl. Sci. 52 (2005) 1899-1902 |
| DOI | 10.1109/TNS.2005.856910 |
| Subject category | Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | CERN LHC ; TOTEM |
| Abstract | Silicon detectors for the Roman Pots of the large hadron collider TOTEM experiment aim for full sensitivity at the edge where a terminating structure is required for electrical stability. This work provides an innovative approach reducing the conventional width of the terminating structure to less than 100 microns, still using standard planar fabrication technology. The objective of this new development is to decouple the electric behaviour of the surface from the sensitive volume within tens of microns. The explanation of the basic principle of this new approach together with the experimental confirmation via electric measurements and beam test are presented in this paper, demonstrating that silicon detectors with this new terminating structure are fully operational and efficient to under 60 microns from the die cut. |
| Copyright/License | Preprint: (License: CC-BY-4.0) |
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