ISO122

Precision Lowest Cost

ISOLATION AMPLIFIER
FEATURES

APPLICATIONS

100% TESTED FOR HIGH-VOLTAGE

BREAKDOWN

INDUSTRIAL PROCESS CONTROL:

Transducer Isolator, Isolator for Thermocouples, RTDs, Pressure Bridges, and
Flow Meters, 4mA to 20mA Loop Isolation
GROUND LOOP ELIMINATION
MOTOR AND SCR CONTROL

RATED 1500Vrms
HIGH IMR: 140dB at 60Hz
BIPOLAR OPERATION: VO = 10V
16-PIN PLASTIC DIP AND 28-LEAD SOIC
EASE OF USE: Fixed Unity Gain
Configuration

POWER MONITORING
PC-BASED DATA ACQUISITION
TEST EQUIPMENT

0.020% max NONLINEARITY

4.5V to 18V SUPPLY RANGE

DESCRIPTION
The ISO122 is a precision isolation amplifier incorporating a novel duty cycle modulation-demodulation
technique. The signal is transmitted digitally across
a 2pF differential capacitive barrier. With digital modulation the barrier characteristics do not affect signal
integrity, resulting in excellent reliability and good high
frequency transient immunity across the barrier. Both
barrier capacitors are imbedded in the plastic body of
the package.

VIN

VOUT

The ISO122 is easy to use. No external components

are required for operation. The key specifications are
0.020% max nonlinearity, 50kHz signal bandwidth,
and 200V/C VOS drift. A power supply range of
4.5V to 18V and quiescent currents of 5.0mA on
VS1 and 5.5mA on VS2 make these amplifiers ideal
for a wide range of applications.
The ISO122 is available in 16-pin plastic DIP and 28lead plastic surface mount packages.

International Airport Industrial Park Mailing Address: PO Box 11400

Tel: (520) 746-1111 Twx: 910-952-1111 Cable: BBRCORP

SBOS160

1989 Burr-Brown Corporation

VS2
Gnd
+VS2
VS1
+VS1

Gnd

Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706

Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132

PDS-857F

Printed in U.S.A. November, 1993

SPECIFICATIONS
At TA = +25C , VS1 = VS2 = 15V, and RL = 2k unless otherwise noted.
ISO122P/U
PARAMETER

CONDITIONS

ISOLATION
Voltage Rated Continuous AC 60Hz
100% Test (1)
Isolation Mode Rejection
Barrier Impedance
Leakage Current at 60Hz
GAIN
Nominal Gain
Gain Error
Gain vs Temperature
Nonlinearity(2)

1s, 5pc PD
60Hz

MIN

TYP

TYP

MAX

UNITS

VAC
VAC
dB
|| pF
Arms

140
1014 || 2
0.18

*
*
*

0.5

VO = 10V
1
0.05
10
0.016

20
200
2
4

OUTPUT
Voltage Range
Current Drive
Capacitive Load Drive
Ripple Voltage(3)

TEMPERATURE RANGE
Specification
Operating
Storage
JA
JC

MIN
*
*

VISO = 240Vrms

INPUT
Voltage Range
Resistance

POWER SUPPLIES
Rated Voltage
Voltage Range
Quiescent Current: VS1
VS2

MAX

1500
2400

INPUT OFFSET VOLTAGE

Initial Offset
vs Temperature
vs Supply
Noise

FREQUENCY RESPONSE
Small Signal Bandwidth
Slew Rate
Settling Time
0.1%
0.01%
Overload Recover Time

ISO122JP/JU

*
*
*
0.025

0.50
0.020

50

*
*
*
*

*
0.050

V/V
%FSR
ppm/C
%FSR

mV
V/C
mV/V
V/Hz

10

12.5
200

*
*

V
k

10
5

12.5
15
0.1
20

*
*

*
*
*
*

V
mA
F
mVp-p

50
2

*
*

kHz
V/s

50
350
150

*
*
*

s
s
s

VO = 10V

15

4.5

5.0
5.5

25
25
40
100
65

*
18
7.0
7.0

+85
+85
+85

*
*
*

*
*

*
*
*
*
*
*

*
*

V
V
mA
mA
C
C
C
C/W
C/W

* Specification same as ISO122P/U.

NOTES: (1) Tested at 1.6 X rated, fail on 5pC partial discharge. (2) Nonlinearity is the peak deviation of the output voltage from the best-fit straight line. It is expressed
as the ratio of deviation to FSR. (3) Ripple frequency is at carrier frequency (500kHz).

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.

ISO122

CONNECTION DIAGRAM
Top View P Package

Top ViewU Package

+VS1 1

16 Gnd

+VS1 1

28 Gnd

VS1 2

15 VIN

VS1 2

27 VIN

VOUT

10 VS2

VOUT 13

16 VS2

Gnd

Gnd 14

15 +VS2

+VS2

ABSOLUTE MAXIMUM RATINGS

PACKAGE INFORMATION(1)
MODEL
ISO122P
ISO122JP
ISO122U
ISO122JU

PACKAGE

PACKAGE DRAWING
NUMBER

16-Pin Plastic DIP

16-Pin Plastic DIP
28-Pin Plastic SOIC
28-Pin Plastic SOIC

238
238
217-1
217-1

Supply Voltage ................................................................................... 18V

VIN ......................................................................................................100V
Continuous Isolation Voltage ..................................................... 1500Vrms
Junction Temperature .................................................................... +150C
Storage Temperature ....................................................................... +85C
Lead Temperature (soldering, 10s) ................................................ +300C
Output Short to Common ......................................................... Continuous

NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.

ORDERING INFORMATION

MODEL
ISO122P
ISO122JP
ISO122U
ISO122JU

PACKAGE

NONLINEARITY
MAX %FSR

Plastic DIP
Plastic DIP
Plastic SOIC
Plastic SOIC

0.020
0.050
0.020
0.050

ISO122

TYPICAL PERFORMANCE CURVES

TA = +25C, VS = 15V unless otherwise noted.

SINE RESPONSE
(f = 2kHz)

SINE RESPONSE
(f = 20kHz)

+10
Output Voltage (V)

Output Voltage (V)

+10

10

500

10

1000

50

STEP RESPONSE

STEP RESPONSE

+10

+10
Output Voltage (V)

Output Voltage (V)

100

Time (s)

Time (s)

10

500

10

50

1000

100

Time (s)

Time (s)

ISOLATION VOLTAGE
vs FREQUENCY

IMR vs FREQUENCY
160

Max DC Rating

140
120

1k

IMR (dB)

Peak Isolation Voltage

2.1k

Degraded
Performance

100
80

100
Typical
Performance

60
40

0
100

1k

10k

100k

1M

10M

100M

100

1k

10k

Frequency (Hz)

Frequency (Hz)

ISO122

10

100k

1M

TYPICAL PERFORMANCE CURVES

TA = +25C, VS = 15V unless otherwise noted.

ISOLATION LEAKAGE CURRENT

vs FREQUENCY

PSRR vs FREQUENCY
60
54

100mA

Leakage Current (rms)

PSRR (dB)

10mA

40
+VS1 , +VS2
VS1 , VS2
20

1mA
1500Vrms
100A
10A
240Vrms
1A
0.1A

0
1

10

100

1k

10k

100k

1M

10

100

1k

10k

100k

1M

Frequency (Hz)

Frequency (Hz)

SIGNAL RESPONSE TO
INPUTS GREATER THAN 250kHz
100kHz

Freq
Out

V OUT / VIN dBm

250

10

200

20

150

30

100

40

50

500kHz

1MHz

Frequency Out

VOUT/VIN

1.5MHz

Input Frequency
(NOTE: Shaded area shows aliasing frequencies that cannot
be removed by a low-pass filter at the output.)

ISO122

THEORY OF OPERATION
The ISO122 isolation amplifier uses an input and an output
section galvanically isolated by matched 1pF isolating capacitors built into the plastic package. The input is dutycycle modulated and transmitted digitally across the barrier.
The output section receives the modulated signal, converts it
back to an analog voltage and removes the ripple component
inherent in the demodulation. Input and output sections are
fabricated, then laser trimmed for exceptional circuitry matching common to both input and output sections. The sections
are then mounted on opposite ends of the package with the
isolating capacitors mounted between the two sections. The
transistor count of the ISO122 is 250 transistors.

VOUT pin equal to VIN. The sample and hold amplifiers in the
output feedback loop serve to remove undesired ripple
voltages inherent in the demodulation process.

BASIC OPERATION
SIGNAL AND SUPPLY CONNECTIONS
Each power supply pin should be bypassed with 1F tantalum capacitors located as close to the amplifier as possible.
The internal frequency of the modulator/demodulator is set
at 500kHz by an internal oscillator. Therefore, if it is desired
to minimize any feedthrough noise (beat frequencies) from
a DC/DC converter, use a filter on the supplies (see Figure
4). ISO122 output has a 500kHz ripple of 20mV, which can
be removed with a simple two pole low-pass filter with a
100kHz cutoff using a low cost op amp. See Figure 4.

MODULATOR
An input amplifier (A1, Figure 1) integrates the difference
between the input current (VIN/200k) and a switched
100A current source. This current source is implemented
by a switchable 200A source and a fixed 100A current
sink. To understand the basic operation of the modulator,
assume that VIN = 0.0V. The integrator will ramp in one
direction until the comparator threshold is exceeded. The
comparator and sense amp will force the current source to
switch; the resultant signal is a triangular waveform with a
50% duty cycle. The internal oscillator forces the current
source to switch at 500kHz. The resultant capacitor drive is
a complementary duty-cycle modulation square wave.

The input to the modulator is a current (set by the 200k

integrator input resistor) that makes it possible to have an
input voltage greater than the input supplies, as long as the
output supply is at least 15V. It is therefore possible when
using an unregulated DC/DC converter to minimize PSR
related output errors with 5V voltage regulators on the
isolated side and still get the full 10V input and output
swing. An example of this application is shown in Figure
10.

DEMODULATOR
The sense amplifier detects the signal transitions across the
capacitive barrier and drives a switched current source into
integrator A2. The output stage balances the duty-cycle
modulated current against the feedback current through the
200k feedback resistor, resulting in an average value at the

CARRIER FREQUENCY CONSIDERATIONS

The ISO122 amplifier transmits the signal across the isolation barrier by a 500kHz duty cycle modulation technique.
For input signals having frequencies below 250kHz, this
system works like any linear amplifier. But for frequencies
above 250kHz, the behavior is similar to that of a sampling
amplifier. The signal response to inputs greater than 250kHz
Isolation Barrier

200A

Sense
150pF

200k
VIN

200A
1pF

1pF

1pF

1pF

Sense
150pF

100A

200k

100A
VOUT

||

+
A1

A2
S/H
G=1

Osc

+VS1 Gnd 1 VS1

+VS2

FIGURE 1. Block Diagram.

ISO122

S/H
G=6

Gnd 2 VS2

HIGH VOLTAGE TESTING

Burr-Brown Corporation has adopted a partial discharge test
criterion that conforms to the German VDE0884 Optocoupler Standards. This method requires the measurement of
minute current pulses (<5pC) while applying 2400Vrms,
60Hz high voltage stress across every ISO122 isolation
barrier. No partial discharge may be initiated to pass this
test. This criterion confirms transient overvoltage (1.6 x
1500Vrms) protection without damage to the ISO122. Lifetest
results verify the absence of failure under continuous rated
voltage and maximum temperature.

performance curve shows this behavior graphically; at input

frequencies above 250kHz the device generates an output
signal component of reduced magnitude at a frequency
below 250kHz. This is the aliasing effect of sampling at
frequencies less than 2 times the signal frequency (the
Nyquist frequency). Note that at the carrier frequency and its
harmonics, both the frequency and amplitude of the aliasing
go to zero.
ISOLATION MODE VOLTAGE INDUCED ERRORS
IMV can induce errors at the output as indicated by the plots
of IMV vs Frequency. It should be noted that if the IMV
frequency exceeds 250kHz, the output also will display
spurious outputs (aliasing), in a manner similar to that for
VIN > 250kHz and the amplifier response will be identical to
that shown in the Signal Response to Inputs Greater Than
250kHz performance curve. This occurs because IMVinduced errors behave like input-referred error signals. To
predict the total error, divide the isolation voltage by the
IMR shown in the IMR vs Frequency curve and compute the
amplifier response to this input-referred error signal from
the data given in the Signal Response to Inputs Greater than
250kHz performance curve. For example, if a 800kHz
1000Vrms IMR is present, then a total of [(60dB) +
(30dB)] x (1000V) = 32mV error signal at 200kHz plus a
1V, 800kHz error signal will be present at the output.

This new test method represents the state of the art for
non-destructive high voltage reliability testing. It is based on
the effects of non-uniform fields that exist in heterogeneous
dielectric material during barrier degradation. In the case of
void non-uniformities, electric field stress begins to ionize
the void region before bridging the entire high voltage
barrier. The transient conduction of charge during and after
the ionization can be detected externally as a burst of 0.010.1s current pulses that repeat on each AC voltage cycle.
The minimum AC barrier voltage that initiates partial discharge is defined as the inception voltage. Decreasing the
barrier voltage to a lower level is required before partial
discharge ceases and is defined as the extinction voltage.
We have characterized and developed the package insulation
processes to yield an inception voltage in excess of 2400Vrms
so that transient overvoltages below this level will not
damage the ISO122. The extinction voltage is above
1500Vrms so that even overvoltage induced partial discharge will cease once the barrier voltage is reduced to the
1500Vrms (rated) level. Older high voltage test methods
relied on applying a large enough overvoltage (above rating)
to break down marginal parts, but not so high as to damage
good ones. Our new partial discharge testing gives us more
confidence in barrier reliability than breakdown/no breakdown criteria.

HIGH IMV dV/dt ERRORS

As the IMV frequency increases and the dV/dt exceeds
1000V/s, the sense amp may start to false trigger, and the
output will display spurious errors. The common mode
current being sent across the barrier by the high slew rate is
the cause of the false triggering of the sense amplifier.
Lowering the power supply voltages below 15V may
decrease the dV/dt to 500V/s for typical performance.
Isolation Barrier

A0
ISO150

+15V 15V
VIN

VOUT

VS2

Gnd

VIN

Gnd
+VS2

+VS1

VS1

1F

+15V 15V

2
9

15 15

10

VOUT

8
ISO122P
16

VS1
1F

6
2
7 PGA
8 102
45
3

A1

VS2
1F

1F

FIGURE 3. Programmable-Gain Isolation Channel with

Gains of 1, 10, and 100.

FIGURE 2. Basic Signal and Power Connections.

ISO122

Isolation Barrier

13k

100pF

385

13k

VIN

ISO122
VS2
Gnd

4700pF

OPA602
3

VOUT = VIN

Gnd

+VS2
VS1
+VS1

10H

10H

10H

VS1
10H

VS2

1F

1F
1F

1F 1F

1F

1F 1F

FIGURE 4. Optional Filter to Minimize Power Supply Feedthrough Noise; Output Filter to Remove 500kHz Carrier Ripple.
For more information concerning output filter refer to AB-023.
This Section Repeated 49 Times.

ISO122P
10k

e1 = 12V

+V
9

10k
15

V = e1
2

7
8
10

e2 = 12V
2

V
Multiplexer

16

Charge/Discharge
Control
ISO122P

e49=12V

15

+V
9
7

e50=12V

+V

25k

25k

25k

10k

10
2

10k

3
25k

16

INA105

6
V = e50
2

FIGURE 5. Battery Monitor for a 600V Battery Power System. (Derives Input Power from the Battery.)

ISO122

Control
Section

+15V

2
10.0V

REF
102

Thermocouple

R4

+15V 15V

R1
27k

+15V

Isothermal
Block with
1N4148 (1)

1M

+15V 15V

12

RG

R2

4 +In
5
INA101
10
11 In

10

15

14

R5
50
R6

VOUT

13

16

3
R3
100

ISO122P

15V
100
Zero Adj

ISA
TYPE
E

Ground Loop Through Conduit

J
NOTE: (1) 2.1mV/C at 2.00A.
K
T

MATERIAL

SEEBACK
COEFFICIENT
(V/C)

R2
(R3 = 100)

R4
(R5 + R6 = 100)

58.5

3.48k

56.2k

50.2

4.12k

64.9k

39.4

5.23k

80.6k

38.0

5.49k

84.5k

Chromel
Constantan
Iron
Constantan
Chromel
Alumel
Copper
Constantan

FIGURE 6. Thermocouple Amplifier with Ground Loop Elimination, Cold Junction Compensation, and Up-scale Burn-out.

1mA

1mA

10
8

5
XTR101

RS

4-20mA

0.01F

11
3

+VS =15V
on PWS740

6
4
R1 = 100

16

14
2 RCV420
5, 13
10
4

RTD
(PT100)

ISO122P

15

+V

15

9
7
8

11
R2 = 2.5k

10

12

VOUT
0V-5V

2
16

2mA
Gnd
VS = 15V
on PWS740

FIGURE 7. Isolated 4-20mA Instrument Loop. (RTD shown.)

ISO122

RS
10k

2k
VL

RD1

Load

0.1F

IL

RD2

2k
ISO122P
+V

16

OPA602

(V1)
IL= V1

10RS

0.01F

9
7

15
8
ISO122P

10

+V
2

1
V

9
15

16

10
2

0.3F

0.3F

1
V

0.3F

XY
10

1
4
PWS740-3
3
6

X
MPY100

0.3F

(V2)
PL= V2(RD1 + RD2)
RS RD2

PWS740-2
1
4
PWS740-3
3
6

(V3)
VL= V3(RD1 + RD2)
RD2

To PWS740-1

PWS740-2

To PWS740-1

FIGURE 8. Isolated Power Line Monitor.

ISO122

10

Channel 1

ISO122P
10
15

VIN

VOUT

8
9

16
2
1
0.3F

0.3F

0.3F

0.3F
Channel 2
(Same as Channel 1.)

PWS740-3

+V

10F

PWS740-3
6

6
3

PWS740-2

20H

PWS740-2
4

0.3F 4

8
6
5

PWS740-1
4
3

Channel 3
(Same as Channel 1.)

Channel 4
(Same as Channel 1.)

FIGURE 9. Three-Port, Low-Cost, Four-Channel Isolated, Data Acquisition System.

11

ISO122

+15V

VIN , up to
10V Swing

ISO
122P

VOUT

8
10
1

16

2
15

+5V
Regulator
MC78L05

0.1F
1

0.1F
1

2
3

5V
Regulator
MC79L05

0.33F 0.33F
4
PWS7403

To PWS7402,1
NOTE: The input supplies can be subregulated to 5V to reduce
PSR related errors without reducing the 10V input range.

FIGURE 10. Improved PSR Using External Regulator.

VS1 (+15V)

VS
(V)

INPUT RANGE
(V)(1)

20+
15
12

2 to +10
2 to +5
2 to +2

7
INA105
Difference Amp
2

5
R1

10k

Signal Source
VIN
+

RS

15 In

RC

Gnd
16

Reference
IN4689
5.1V

ISO
ISO
122P
122
122P

(1)

R4

R3

+VS2 (+15V)

R2

7
8

VOUT = VIN

10

2
VS1

Com 2

VS2 (15V)

NOTE: Since the amplifier is unity gain, the input

range is also the output range. The output can go to
2V since the output section of the ISO amp operates
from dual supplies.

NOTE: (1) Select to match RS .

FIGURE 11. Single Supply Operation of the ISO122P Isolation Amplifier. For additional information see AB-009.

ISO122

12

HPR117

15V, 20mA

VIN
Input
Gnd

+15V, 20mA
16

15

10

Gnd V IN

V+

INPUT
SECTION
V+

ISO122P

Auxiliary
Isolated
Power
Output

OUTPUT
SECTION
V

Gnd
8

+15V

Output
Gnd

15V

VO

FIGURE 12. Input-Side Powered ISO Amp. For additional information refer to AB-024.

+15V

Gnd

HPR117

HPR117
6

VIN

15V, 20mA

Input
Gnd

+15V, 20mA
16

15

10

Gnd V IN

V+

INPUT
SECTION
Auxiliary
Isolated
Power
Output

V+

ISO122P

Auxiliary
Isolated
Power
Output

OUTPUT
SECTION
V

Gnd
8

+15V, 20mA

Output
Gnd

15V, 20mA

VO

FIGURE 13. Powered ISO Amp with Three-Port Isolation. For additional information refer to AB-024.

13

ISO122

IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TIs standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
Customers are responsible for their applications using TI components.
In order to minimize risks associated with the customers applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
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Copyright 2000, Texas Instruments Incorporated

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