Optica Publishing Group Congratulates the 2014 Nobel Prize Winners in Physics

Optica Publishing Group congratulates Optica Member Hiroshi Amano of Nagoya University, Japan, along with Isamu Akasaki of Nagoya University and Meijo University, Japan, and Shuji Nakamura of the University of California at Santa Barbara, USA, for being awarded the 2014 Nobel Prize in Physics. The trio received the award "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources." Amano joins 33 other Optica members who have been awarded a Nobel Prize in Physics, Chemistry or Physiology/Medicine over the course of the society's nearly 100-year history.

In light of their latest achievement, we has pulled together a collection of articles below from journals and conference proceedings that Amano, Akasaki, and Nakamura have published with Optica Publishing Group. To ensure that you are able to enjoy these articles regardless of whether you or your institution is a subscriber or not, we are providing FREE access until 31 December 2014 for any article that is not already an Open Access article.

JOURNAL ARTICLES

1. Ji-Su Son, Yoshio Honda, and Hiroshi Amano, "Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH₃ interrupted etching," Opt. Express 22, 3585-3592 (2014).

2. Yuji Zhao, Qimin Yan, Daniel Feezell, Kenji Fujito, Chris G. Van de Walle, James S. Speck, Steven P. DenBaars, and Shuji Nakamura, "Optical polarization characteristics of semipolar (303̅1) and (303̅1̅) InGaN/GaN light-emitting diodes," Opt. Express 21, A53-A59 (2013).

3. Daniel F. Feezell, James S. Speck, Steven P. DenBaars, and Shuji Nakamura, " Semipolar (20̅21) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting," J. Display Technol. 9, 190-198 (2013).

4. Takahiro Matsumoto, Sho Iwayama, Takao Saito, Yasuyuki Kawakami, Fumio Kubo, and Hiroshi Amano, "Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters," Opt. Express 20, 24320-24329 (2012).

5. Arthur H. Reading, Jacob J. Richardson, Chih-Chien Pan, Shuji Nakamura, and Steven P. DenBaars, "High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy," Opt. Express 20, A13-A19 (2012).

6. Hiroaki Ohta, Steven P. DenBaars, and Shuji Nakamura, "Future of group-III nitride semiconductor green laser diodes [Invited]," J. Opt. Soc. Am. B 27, B45-B49 (2010).

7. Won Bin Im, Yoann Fourré, Stuart Brinkley, Junichi Sonoda, Shuji Nakamura, Steven P. DenBaars, and Ram Seshadri, "Substitution of oxygen by fluorine in the GdSr₂AlO₅:Ce³⁺ phosphors: Gd_1-xSr_2+xAlO_5-xF_x solid solutions for solid state white lighting," Opt. Express 17, 22673-22679 (2009).

8. Hisashi Masui, Shuji Nakamura, and Steven P. DenBaars, "Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes," Appl. Opt. 47, 88-92 (2008).

9. Hisashi Masui, Natalie N. Fellows, Hitoshi Sato, Hirokuni Asamizu, Shuji Nakamura, and Steven P. DenBaars, "Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes," Appl. Opt. 46, 5974-5978 (2007).

CONFERENCE PROCEEDINGS

1. M. Hardy, C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of True Green ITO Clad Semipolar (20̅21) InGaN/GaN Laser Diodes," in CLEO: 2013, OSA Technical Digest (online) (Optical Society of America, 2013), paper CF1F.1.

2. M. Ippommatsu, A. Hirano, I. Akasaki, and H. Amano, "Development of AlGaN DUV-LED," in 2013 Conference on Lasers and Electro-Optics Pacific Rim, (Optical Society of America, 2013), paper MH1_3.

3. S. Nakamura, "GaN-based VCSEL fabricated on Nonpolar GaN substrates," in 2013 Conference on Lasers and Electro-Optics Pacific Rim, (Optical Society of America, 2013), paper MH1_1.

4. C. Huang, Y. Zhao, M. Hardy, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20̅21) Laser Diodes (λ=505nm) with Wavelength-Stable InGaN/GaN Quantum Wells," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (online) (Optical Society of America, 2012), paper CTu2N.5.

5. D. Haeger, E. Young, R. Chung, F. Wu, S. Nakamura, S. DenBaars, J. S. Speck, A. Romanov, and D. A. Cohen, "384nm AlGaN Diode Lasers on Relaxed Semipolar Buffers," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (online) (Optical Society of America, 2012), paper CTu2N.4.

6. M. T. Hardy, P. S. Hsu, I. L. Koslow, D. Feezell, S. Nakamura, J. S. Speck, and S. DenBaars, "Demonstration of a Relaxed Waveguide Semipolar (20̅21) InGaN/GaN Laser Diode," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (online) (Optical Society of America, 2012), paper CTu2N.2.

7. Y. Zhao, C. Huang, S. Tanaka, C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20̅21) Blue and Green InGaN Light-Emitting Diodes," in Conference on Lasers and Electro-Optics 2012, OSA Technical Digest (Optical Society of America, 2012), paper JTh4J.2.

8. H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, "IQE and EQE of the nitride-based UV/DUV LEDs," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper JTuD2.

9. G. A. Garrett, H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, Z. Jia, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Time-Resolved Optical Studies of InGaN LED Structures Grown on Semipolar and Nonpolar Bulk GaN Substrates," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CMAA1.

10. W. W. Chow, H. Amano, and I. Akasaki, "Filamentation in InGaN quantum well lasers," in Conference on Lasers and Electro-Optics, S. Brueck, R. Fields, M. Fejer, and F. Leonberger, eds., OSA Technical Digest (Optical Society of America, 2000), paper CMG3.

11. W. W. Chow, H. Amano, T. Takeuchi, and J. Han, "Well width dependence of threshold in InGaN/AIGaN quantum well lasers," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optical Society of America, 1999), paper CTuO3.

12. S. Nakamura, "Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optical Society of America, 1997), paper CThB2.

13. S. Nakamura, "III-V nitride-based blue laser diodes with quantum-well structures," in Conference on Lasers and Electro-Optics, J. Bowers, D. Miller, D. Scifres, and A. Weiner, eds., Vol. 9 of OSA Technical Digest (Optical Society of America, 1996), paper CML1.

14. S. Nakamura, "III-V Nitride Light-Emitting Diodes," in Advanced Solid State Lasers, B. Chai and S. Payne, eds., Vol. 24 of OSA Proceedings Series (Optical Society of America, 1995), paper AP6.

15. S. Nakamura, "InGaN/AlGaN blue light emitting diodes," in Conference on Lasers and Electro-Optics, T. Deutsch, J. Goldsmith, D. Killinger, and G. Valley, eds., Vol. 15 of OSA Technical Digest (Optical Society of America, 1995), paper CMH3.