(Q62589507)

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Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer

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title

Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer (English)

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main subject

condensed matter physics

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1 reference

1

S. Sanguinetti

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author name string

K. Watanabe

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2

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T. Tateno

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3

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M. Gurioli

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4

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P. Werner

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5

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M. Wakaki

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6

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N. Koguchi

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7

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publication date

June 2003

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published in

Journal of Crystal Growth

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volume

253

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issue

1-4

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page(s)

71-76

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cites work

Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

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https://api.crossref.org/works/10.1016%2FS0022-0248%2803%2901016-9

retrieved

7 January 2021

Effects of post-growth annealing on the optical properties of self-assembled GaAs/AlGaAs quantum dots

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Crossref

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https://api.crossref.org/works/10.1016%2FS0022-0248%2803%2901016-9

retrieved

7 January 2021

Thermally activated carrier transfer and luminescence line shape in self‐organized InAs quantum dots

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https://api.crossref.org/works/10.1016%2FS0022-0248%2803%2901016-9

retrieved

7 January 2021

Carrier thermal escape and retrapping in self-assembled quantum dots

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https://api.crossref.org/works/10.1016%2FS0022-0248%2803%2901016-9

retrieved

7 January 2021

Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots

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reference URL

https://api.crossref.org/works/10.1016%2FS0022-0248%2803%2901016-9

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7 January 2021

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DOI

10.1016/S0022-0248(03)01016-9

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(Q62589507)

Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer

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